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  high-gain igbt w diode Datasheet PDF File

For high-gain igbt w diode Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

    IKW50N65F5

Infineon Technologies AG
Part No. IKw50N65F5
Description 650V DuoPack igbt and diode High speed switching series fifth generation

File Size 2,366.24K  /  17 Page

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    PG-TO220-3 IKP08N65F5

Infineon Technologies AG
Part No. PG-TO220-3 IKP08N65F5
Description 650V DuoPack igbt and diode High speed switching series fifth generation

File Size 2,438.00K  /  17 Page

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    PG-TO220-3-FP IKA15N65F5

Infineon Technologies AG
Part No. PG-TO220-3-FP IKA15N65F5
Description 650V DuoPack igbt and diode High speed switching series fifth generation

File Size 2,468.36K  /  17 Page

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    HGTP12N60A4D HGT1S12N60A4DS HGTG12N60A4D HGTG12N60A4DNL HGTP12N60A4DNL

Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP12N60A4D HGT1S12N60A4DS HGTG12N60A4D HGTG12N60A4DNL HGTP12N60A4DNL
Description    600V, SMPS Series N-Channel igbt with Anti-Parallel Hyperfast diode
600V, SMPS Series N-Channel igbt with Anti-Parallel Hyperfast diode 54 A, 600 V, N-CHANNEL igbt, TO-247
600V/ SMPS Series N-Channel igbt with Anti-Parallel Hyperfast diode
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk

File Size 170.23K  /  8 Page

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    MJD18002D2-D

ON Semiconductor
Part No. MJD18002D2-D
Description Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter diode and Built-In Efficient Antisaturation Network

File Size 144.50K  /  16 Page

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    IXGT31N60D1 IXGH31N60D1

IXYS, Corp.
IXYS Corporation
Part No. IXGT31N60D1 IXGH31N60D1
Description Ultra-Low VCE(sat) igbt with diode(VCES00V,VCE(sat).7V的绝缘栅双极晶体带二极管)) 60 A, 600 V, N-CHANNEL igbt, TO-247AD
Ultra-Low V igbt with diode

File Size 52.67K  /  2 Page

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    IXGH25N100 IXGH25N100A IXGM25N100A IXGM25N100

IXYS, Corp.
IXYS[IXYS Corporation]
Part No. IXGH25N100 IXGH25N100A IXGM25N100A IXGM25N100
Description Low VCE(sat), High speed igbt 50 A, 1000 V, N-CHANNEL igbt, TO-247AD
Low V High speed igbt

File Size 103.50K  /  4 Page

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    IKB15N60T

INFINEON[Infineon Technologies AG]
Part No. IKB15N60T
Description 600V & 1200V igbt for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...
igbt in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

File Size 394.61K  /  13 Page

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    IXYS, Corp.
Part No. IXGP16N60C2D1 IXGA16N60C2
Description HiPerFASTTM igbt C2-Class High Speed igbt 40 A, 600 V, N-CHANNEL igbt, TO-220AB
HiPerFASTTM igbt C2-Class High Speed igbt 40 A, 600 V, N-CHANNEL igbt, TO-263AB

File Size 522.73K  /  2 Page

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    2SD2114K 2SD2144S A5800324 2SD2114KW 2SD2144SU 2SD2144SV 2SD2144SW 2SD2114KU 2SD2114KV 2SD2144

Rohm CO.,LTD.
ROHM[Rohm]
Part No. 2SD2114K 2SD2144S A5800324 2SD2114Kw 2SD2144SU 2SD2144SV 2SD2144Sw 2SD2114KU 2SD2114KV 2SD2144
Description High-current Gain MediumPower Transistor (20V/ 0.5A)
High-current Gain MediumPower Transistor (20V, 0.5A)
High-current Gain Medium Power Transistor (20V,0.5A)
From old datasheet system

File Size 122.49K  /  4 Page

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For high-gain igbt w diode Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

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