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IDT[Integrated Device Technology]
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| Part No. |
IDT82V2082PF IDT82V2082
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| OCR Text |
...t haul line interfaces Supports hps (Hitless Protection Switching) for 1+1 protection without external relays Receiver sensitivity exceeds -36 dB@772KHz and -43 dB@1024 KHz Programmable T1/E1/J1 switchability allowing one bill of material f... |
| Description |
DUAL CHANNEL T1/E1/J1 LONG HAUL/ SHORT HAUL LINE INTERFACE UNIT
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| File Size |
897.08K /
79 Page |
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it Online |
Download Datasheet
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http://
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| Part No. |
IDT82P5088BBBLANK
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| OCR Text |
...haul line interfaces ? supports hps (hitless protectio n switching) for 1+1 protection without external relays ? receiver sensitivity exceeds - 36 db@772khz and -43 db@1024 khz ? programmable t1/e1/j1 switchab ility allowing one bill of ma... |
| Description |
Universal Octal T1/E1/J1 LIU with Integrated Clock Adapter
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| File Size |
888.34K /
81 Page |
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it Online |
Download Datasheet |
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http://
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| Part No. |
INA-03184 INA-03184-BLK
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| OCR Text |
...es of mmics is fabricated using hps 10 ghz f t , 25 ghz f max , isosat?-i silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal ... |
| Description |
Low Noise, Cascadable Silicon Bipolar MMIC Amplifier
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| File Size |
43.66K /
4 Page |
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it Online |
Download Datasheet |
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http://
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| Part No. |
INA-12063 INA-12063-TR1 INA-12063-BLK
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| OCR Text |
...e ina-12063 is fabricated using hps 30 ghz f max isosat? silicon bipolar process which uses nitride self-alignment submicrometer lithography, trench isolation, ion implantation, gold metalization, and polyimide intermetal dielectric and sc... |
| Description |
1500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
1.5 GHz的低噪声自偏置晶体管放大
1.5 GHz Low Noise Self-Biased Transistor Amplifier
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| File Size |
336.51K /
24 Page |
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it Online |
Download Datasheet |
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