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IRF[International Rectifier]
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| Part No. |
IRFU2605 IRFR2605
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| OCR Text |
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PD - 9.1253
IRFR2605 IRFU2605
HEXFET(R) Power MOSFET
Ultra Low On-Resistance ESD Protected Surface Mount (IRFR2605) Straight Lead (IRFU2605) 150C Operating Temperature Repetitive Avalanche Rated Fast Switchi... |
| Description |
Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=19A)
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| File Size |
301.27K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRFV260
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| OCR Text |
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Provisional Data Sheet No. PD-9.2002
IRFV260 HEXFET(R) TRANSISTOR
N-CHANNEL
200 Volt, 0.060, HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The ... |
| Description |
TRANSISTOR N-CHANNEL(Vdss=200V, Rds(on)=0.060ohm, Id=45A*)
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| File Size |
80.91K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRFY044CM
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| OCR Text |
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Provisional Data Sheet No. PD 9.1285C
HEXFET(R) POWER MOSFET
IRFY044CM
N-CHANNEL
60 Volt, 0.040 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors.... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.040ohm, Id=16A*)
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| File Size |
241.65K /
6 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFY130CM
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| OCR Text |
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Provisional Data Sheet No. PD 9.1286C
HEXFET(R) POWER MOSFET
IRFY130CM N-CHANNEL
100 Volt, 0.18 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. ... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14.4A)
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| File Size |
286.64K /
6 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFY340CM
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| OCR Text |
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Provisional Data Sheet No. PD 9.1290B
HEXFET(R) POWER MOSFET
IRFY340CM
N-CHANNEL
400 Volt, 0.55 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors.... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.55ohm, Id=8.7A)
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| File Size |
235.76K /
6 Page |
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IRF[International Rectifier]
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| Part No. |
IRFY430CM
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| OCR Text |
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Provisional Data Sheet No. PD 9.1291B
HEXFET(R) POWER MOSFET
IRFY430CM
N-CHANNEL
500 Volt, 1.5 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. ... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=500V, Rd(on)=1.5ohm, Id=4.5A)
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| File Size |
240.38K /
6 Page |
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IRF[International Rectifier]
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| Part No. |
IRGB420U IRGB420 INTERNATIONALRECTIFIER-IRGB420
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PD - 9.784A
IRGB420U
INSULATED GATE BIPOLAR TRANSISTOR
Features
* Switching-loss rating includes all "tail" losses * Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency c... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7.5A)
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| File Size |
217.34K /
6 Page |
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IRF[International Rectifier]
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| Part No. |
IRGB430UD2
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PD - 9.1067
IRGB430UD2
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
* Switching-loss rating includes all "tail" losses TM * HEXFRED soft ultrafast diodes * Optimized for hig... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=500V, @Vge=15V, Ic=15A)
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| File Size |
381.32K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRGB430U IRGB430
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| OCR Text |
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PD - 9.783A
IRGB430U
INSULATED GATE BIPOLAR TRANSISTOR
Features
* Switching-loss rating includes all "tail" losses * Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency c... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15A)
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| File Size |
217.06K /
6 Page |
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it Online |
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http://
IRF[International Rectifier]
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| Part No. |
IRGB440U
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| OCR Text |
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Next Data Sheet
PD - 9.782A
IRGB440U
INSULATED GATE BIPOLAR TRANSISTOR
Features
* Switching-loss rating includes all "tail" losses * Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency c... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=22A)
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| File Size |
215.42K /
6 Page |
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it Online |
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