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  jul.11.02 Datasheet PDF File

For jul.11.02 Found Datasheets File :: 3262    Search Time::0.922ms    
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    BSM300GA170DN2E3166 300A17E2

Siemens Semiconductor Group
Infineon
Part No. BSM300GA170DN2E3166 300A17E2
OCR Text ... Semiconductor Group 1 Jul-31-1996 BSM300GA170DN2 E3166 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th)...
Description IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)
From old datasheet system

File Size 124.78K  /  9 Page

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    Motorola
Part No. MC9S12C32MFU25
OCR Text ... 21.MAY.03 01.00 01.01 15.JUL.03 15.JUL03 12.AUG.03 12.AUG.03 2 Device User Guide -- 9S12C-FamilyDGV1/D V01.01 Table of...11 PE4 / ECLK-- Port E I/O Pin [4] / E-Clock Output . . . . . . . . . . . . . . . . . . . . . . . . ...
Description IC,MICROCONTROLLER,16-BIT,CPU12 CPU,CMOS,QFP,80PIN,PLASTIC

File Size 666.08K  /  132 Page

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    MN39116AT

Panasonic Semiconductor
Part No. MN39116AT
OCR Text ...ic Industrial Co., Ltd. 2002 JUL
Description Diagonal 4.5 mm (type-1/4) 270k-pixel CCD Area Image Sensor

File Size 115.56K  /  8 Page

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    BFR340F

INFINEON[Infineon Technologies AG]
Part No. BFR340F
OCR Text ...hJA 1 Unit K/W Jul-01-2003 BFR340F Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Charact...11 - 14 0.21 0.17 0.11 1.15 0.4 - GHz pF Ccb Cce Ceb Fmin dB Gms - 16 - ...
Description RF-Bipolar - NPN Silicon RF transistor in TSFP-3 package ideal for Low Noise Amplifiers and Oscillators

File Size 150.45K  /  8 Page

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    BSR12 BSR12_CNV_2 BSR12-CNV-15

Philips Semiconductors
NXP Semiconductors
Part No. BSR12 BSR12_CNV_2 BSR12-CNV-15
OCR Text Jul 23 Philips Semiconductors Product specification PNP switching transistor FEATURES * Low current (max. 100 mA) * Low voltage (m...11.7 V; VBB = -9.85 V; ICon = -30 mA; IBon = -3 mA; IBoff = 3 mA GHz pF pF Switching time (see...
Description From old datasheet system
PNP switching transistor

File Size 57.03K  /  12 Page

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    SFBDW51A BDW51A

Seme LAB
Part No. SFBDW51A BDW51A
OCR Text ...w.semelab.co.uk Generated 31-Jul-02
Description Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

File Size 10.67K  /  1 Page

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    SFBUY71 BUY71

Seme LAB
Part No. SFBUY71 BUY71
OCR Text ...w.semelab.co.uk Generated 31-Jul-02
Description Bipolar NPN Device

File Size 10.65K  /  1 Page

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    UAA3592 UAA3592HN

Philips Semiconductors
NXP Semiconductors
Part No. UAA3592 UAA3592HN
OCR Text ...r Objective specification 2002 Jul 02 Philips Semiconductors Objective specification Wideband code division multiple access freque...11 RFO Rext 16 BIAS CONTROL POWER DETECTOR ICTL EN 2 1 (1) GND 15 Vreg 4, 5 9, 12, 13...
Description Wideband Code Division Multiple / Access Frequency Division Duplex / Power Amplifier
Wideband code division multiple access frequency division duplex power amplifier

File Size 53.65K  /  12 Page

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    2N7002 2N7000 BS170

http://
Vishay Siliconix
Vishay Intertechnology,Inc.
Part No. 2N7002 2N7000 BS170
OCR Text ...mber: 70226 S-04279--Rev. F, 16-Jul-01 www.vishay.com 11-1 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Single Parameter Drain-Source Voltage Gate-Source Voltage--...
Description N-Channel 60-V (D-S) MOSFET
Regulated Output Power; 1.6kVDC Isolation; ULCertified; Low Profile, 10.2 mm Height; Over Current Protection; Five-Sided Shield; Standard DIP24

File Size 48.87K  /  5 Page

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