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  n-channel 1200v - 2 8 - 4 4a - Datasheet PDF File

For n-channel 1200v - 2 8 - 4 4a - Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

    ADPOW[Advanced Power Technology]
Part No. APT12040JVR
Description POWER MOS V 1200v 26A 0.400 Ohm
Power MOS V is a new generation of high voltage n-channel enhancement mode power MOSFETs

File Size 207.00K  /  4 Page

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ADPOW[Advanced Power Technology]
Part No. APT1201R5B APT1201R5BVR
Description Power MOS V is a new generation of high voltage n-channel enhancement mode power MOSFETs.
POWER MOS V 1200v 10A 1.500 Ohm

File Size 63.04K  /  4 Page

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    APT12080JVR

ADPOW[Advanced Power Technology]
Part No. APT12080JVR
Description POWER MOS V 1200v 15A 0.800 Ohm
Power MOS V is a new generation of high voltage n-channel enhancement mode power MOSFETs

File Size 203.21K  /  4 Page

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    IRG4PH50UD IRG4PH50

IRF[International Rectifier]
Part No. IRG4PH50UD IRG4PH50
Description 1200v UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200v, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200v Vce(on)typ.=2.78V @Vge=15V Ic=24A)

File Size 226.41K  /  10 Page

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    IRG4PH40KD

IRF[International Rectifier]
Part No. IRG4PH40KD
Description 1200v UltraFast 4-20 kHz Copack IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200v Vce(on)typ.=2.47V @Vge=15V Ic=15A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200v, Vce(on)typ.=2.47V, @Vge=15V, Ic=15A)

File Size 214.26K  /  10 Page

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    Advanced Power Technology Ltd.
Part No. APT12031JLL
Description POWER MOS 7 1200v 30A 0.310 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, n-channel enhancement mode power MOSFETS.

File Size 69.60K  /  2 Page

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    Advanced Power Technology Ltd.
Part No. APT12040L2LL
Description POWER MOS 7 1200v 30A 0.400 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, n-channel enhancement mode power MOSFETS

File Size 64.27K  /  2 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. ISL9K18120 ISL9K18120G3
Description 18A, 1200v Stealth Dual Diode
18A 1200v Stealth Dual Diode
18A, 1200v Stealth⑩ Dual Diode

File Size 118.06K  /  6 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. ISL9K30120 ISL9K30120G3
Description 30A, 1200v Stealth?/a> Dual Diode
30A, 1200v Stealth⑩ Dual Diode
30A, 1200v Stealth Dual Diode

File Size 116.05K  /  6 Page

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    Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
Part No. 126S 117S 151S 176S
Description THYRISTOR/DIODE MODULE, 40A 1200vTHYRISTOR/DIODE MODULE, 40A 1200v; Voltage, Vrrm:1200v; Current, It av:40A; Case style:SEMIPACK 1; Current, It rms
3/8 (9.52mm) Sq. Wirewound Trimmers
3/8in [9.52mm] Sq. Wirewound Trimmers, Precious Metal Wiper, Solderable Leads, Military Quality at Affordable Prices

File Size 36.16K  /  2 Page

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For n-channel 1200v - 2 8 - 4 4a - Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

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