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  nanosecond Datasheet PDF File

For nanosecond Found Datasheets File :: 979    Search Time::3.25ms    
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    MURB1620CT_D ON2745 MURB1620CT

Motorola, Inc
ON Semi
Part No. MURB1620CT_D ON2745 MURB1620CT
OCR Text ...Mount Applications Ultrafast 35 nanosecond Recovery Times 175C Operating Junction Temperature Epoxy Meets UL94, VO @ 1/8 High Temperature Glass Passivated Junction Low Leakage Specified @ 150C Case Temperature Short Heat Sink Tab Manufactur...
Description From old datasheet system
ULTRAFAST RECTIFIER 16 AMPERES 200 VOLTS

File Size 102.30K  /  6 Page

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    ON Semi
Part No. MURF1620CT_D ON2749
OCR Text ...s: * * * * * * * * Ultrafast 35 nanosecond Recovery Times 150C Operating Junction Temperature Epoxy Meets UL94, VO @ 1/8 High Temperature Glass Passivated Junction Low Leakage Specified @ 150C Case Temperature Current Derating @ Both Case a...
Description ULTRAFAST RECTIFIER 16 AMPERES 200 VOLTS
From old datasheet system

File Size 80.07K  /  4 Page

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    Intersil
Part No. HFA1113_883 FN3618
OCR Text ...ge or input saturation. The sub-nanosecond overdrive recovery time quickly returns the amplifier to linear operation following an overdrive condition. Component and composite video systems will also benefit from this buffer's performance, a...
Description Output Limiting, Ultra High Speed Programmable Gain, Buffer Amplifier
From old datasheet system

File Size 217.07K  /  22 Page

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    Intersil
Part No. HFA1130_883 FN3625
OCR Text ...ge or input saturation. The sub-nanosecond overdrive recovery time quickly returns the amplifier to linear operation following an overdrive condition. The HFA1130/883's wide bandwidth, fast settling characteristic, and low output impedance,...
Description Output Clamping, 850MHz Current Feedback Amplifier
From old datasheet system

File Size 150.02K  /  19 Page

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    ISB35000SERIES ISB35666 ISB35000 ISB35832 ISB35083 ISB35130 ISB35166 ISB35208 ISB35279 ISB35389 ISB35484

STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
ST Microelectronics
Part No. ISB35000SERIES ISB35666 ISB35000 ISB35832 ISB35083 ISB35130 ISB35166 ISB35208 ISB35279 ISB35389 ISB35484
OCR Text ...5 micron process to achieve sub-nanosecond internal speeds while offering very low power dissipation and high noise immunity. The potential total gate count ranges above 1 million equivalent usable gates. The array operates over a Vdd volta...
Description HCMOS STRUCTURED ARRAY HCMOS结构化阵

File Size 344.08K  /  15 Page

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    Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. RFP50N05L RFG50N05L FN2424
OCR Text ... is Power Dissipation Limited * nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Majority Carrier Device * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" ...
Description 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs 50 A, 50 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
50A/ 50V/ 0.022 Ohm/ Logic Level/ N-Channel Power MOSFETs
50A 50V 0.022 Ohm Logic Level N-Channel Power MOSFETs
From old datasheet system

File Size 51.23K  /  6 Page

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    Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
Part No. AN1943
OCR Text ...ey are synchronized to within a nanosecond or so at the output of the MAX4455. Due to the finite switching time of the fast MUX in the MAX4358, the OSDFILL signal emerges slightly delayed from the OSDKEY signal. This results in a slightly d...
Description Improving the Performance of the MAX4455 by Reducing On-Screen Display Artifacts

File Size 209.01K  /  4 Page

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    MURHD560

ON Semiconductor
Part No. MURHD560
OCR Text nanosecond Recovery Times 175C Operating Junction Temperature High Temperature Glass Passivated Junction High Voltage Capability to 600 Volts These are Pb-Free Devices http://onsemi.com Applications ULTRAFAST RECTIFIER 5.0 AMPERES ...
Description 5A 600V MEGAHERTZ Ultrafast Rectifier

File Size 55.05K  /  5 Page

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    INTERSIL[Intersil Corporation]
Part No. RF1S9630SM IRF9630 FN2224
OCR Text ... is Power Dissipation Limited * nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information PART...
Description 6.5A/ 200V/ 0.800 Ohm/ P-Channel Power MOSFETs
6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs
From old datasheet system
6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs

File Size 63.29K  /  7 Page

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    Intel
Part No. A28F010 29026604
OCR Text ...n and immunity to noise Its 120 nanosecond access time provides no-WAIT-state performance for a wide range of microprocessors and microcontrollers Maximum standby current of 300 mA translates into power savings when the device is deselected...
Description 1024K (128K x 8) CMOS FLASH MEMORY
From old datasheet system

File Size 246.10K  /  23 Page

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For nanosecond Found Datasheets File :: 979    Search Time::3.25ms    
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