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  non-volatile low Datasheet PDF File

For non-volatile low Found Datasheets File :: 5224    Search Time::1.391ms    
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    MBM29PDS322TE10 MBM29PDS322TE10PBT MBM29PDS322TE11 MBM29PDS322TE11PBT MBM29PDS322BE MBM29PDS322BE10 MBM29PDS322BE10PBT M

FUJITSU[Fujitsu Media Devices Limited]
Part No. MBM29PDS322TE10 MBM29PDS322TE10PBT MBM29PDS322TE11 MBM29PDS322TE11PBT MBM29PDS322BE MBM29PDS322BE10 MBM29PDS322BE10PBT MBM29PDS322BE11 MBM29PDS322BE11PBT MBM29PDS322TE
OCR Text ...capability of allowing a normal non-delayed read access from a non-busy bank of the array while an embedded write (either a program or an er...volatile Flash memory solution. The device offers fast page access times of 45 ns with random access...
Description 32M (2M x 16) BIT Page Dual Operation

File Size 225.90K  /  66 Page

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    TC52

Microchip Technology
Part No. TC52
OCR Text ...rial EEPROMs, microperipherals, non-volatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001 certified. 2002 Microchip Technology Inc. DS21430B-pag...
Description Dual Channel Voltage Detector

File Size 445.92K  /  11 Page

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    X28HT010 X28HT010D-20 X28HT010D-25 X28HT010F-20 X28HT010F-25 X28HT010K-20 X28HT010K-25 X28HT010R-20 X28HT010R-25

XICOR[Xicor Inc.]
Part No. X28HT010 X28HT010D-20 X28HT010D-25 X28HT010F-20 X28HT010F-25 X28HT010K-20 X28HT010K-25 X28HT010R-20 X28HT010R-25
OCR Text ...cs. Like all Xicor programmable non-volatile memories the X28HT010 is a 5V only device. The X28HT010 features the JEDEC approved pinout for byte-wide memories, compatible with industry standard EPROMs. The X28HT010 supports a 256-byte page ...
Description High Temperature/ 5 Volt/ Byte Alterable E2PROM
High Temperature, 5 Volt, Byte Alterable E2PROM

File Size 65.78K  /  13 Page

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    24LC02 HT24LC02 24LC01 HT24LC01

Holtek Semiconductor In...
HOLTEK[Holtek Semiconductor Inc]
Holtek Semiconductor, Inc.
Part No. 24LC02 HT24LC02 24LC01 HT24LC01
OCR Text ...s a 1K/2K-bit serial read/write non-volatile memory device using the CMOS floating gate process. Its 1024/2048 bits of memory are organized into 128/256 words and each word is 8 bits. The device is optimized for use in many industrial and c...
Description 1K/2K2-WireCMOSSerialEEPROM
1K/2K 2-Wire CMOS Serial EEPROM 1K/2K 2线的CMOS串行EEPROM

File Size 245.08K  /  8 Page

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    LH28F004SU-Z1

SHARP[Sharp Electrionic Components]
Part No. LH28F004SU-Z1
OCR Text ...gh density, highest performance non-volatile read/write solution for solidstate storage applications. Its independently lockable 32 symmetrical blocked architecture (16K each) extended cycling, low power operation, very fast write and read ...
Description 4M (512K 】 8) Flash Memory
4M (512K 8) Flash Memory

File Size 179.96K  /  32 Page

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    LH28F004SU-Z9

SHARP[Sharp Electrionic Components]
Part No. LH28F004SU-Z9
OCR Text ... (4,194,304 bit) block erasable non-volatile random access memory organized as 512K x 8. The LH28F004SU includes thirty-two 16K (16,384) blocks. A chip memory map is shown in Figure 3. The implementation of a new architecture, with many enh...
Description 4M (512 】 8) Flash Memory
4M (512 8) Flash Memory

File Size 185.42K  /  31 Page

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    M28F101 M28F101-100K1 M28F101-100K3 M28F101-100K6 M28F101-100N1 M28F101-100N3 M28F101-100N6 M28F101-100P1 M28F101-100P3

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. M28F101 M28F101-100K1 M28F101-100K3 M28F101-100K6 M28F101-100N1 M28F101-100N3 M28F101-100N6 M28F101-100P1 M28F101-100P3 M28F101-100P6 M28F101-100XK1 M28F101-100XK3 M28F101-100XK6 M28F101-100XN1 M28F101-100XN3 M28F101-100XN6 M28F101-100XP1 M28F101-100XP3 M28F101-100XP6 M28F101-120K1 M28F101-120K3 M28F101-120K6 M28F101-120N1 M28F101-120N3 M28F101-120N6 M28F101-120P1 M28F101-120P3 M28F101-120P6 M28F101-120XK1 M28F101-120XK3 M28F101-120XK6 M28F101-120XN1 M28F101-120XN3 M28F101-120XN6 M28F101-120XP1 M28F101-120XP3 M28F101-120XP6 M28F101-150K1 M28F101-150K3 M28F101-150K6 M28F101-150N1 M28F101-150N3 M28F101-150N6 M28F101-150P1 M28F101-150P3 M28F101-150P6 M28F101-150XK1 M28F101-150XK3 M28F101-150XK6 M28F101-150XN1 M28F101-150XN3 M28F101-150XN6 M28F101-150XP1 M28F101-150XP3 M28F101-150XP6 M28F101-200K1 M28F101-200K3 M28F101-200K6 M28F101-200N1 M28F101-200N3 M28F101-200N6 M28F101-200P1 M28F101-200P3 M28F101-200P6 M28F101-200XK1 M28F101-200XK3 M28F101-200XK6 M28F101-200XN1 M28F101-200XN3 M28F101-200XN6 M28F101-200XP1 M28F101-200XP3 M28F101-200XP6 M28F101-70K1 M28F101-70K3 M28F101-70K6 M28F101-70N1 M28F101-70N3 M28F101-70N6 M28F101-70P1 M28F101-70P3 M28F101-70P6 M28F101-70XK1 M28F101-70XK3 M28
OCR Text ...N The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 128K bytes of 8 bits. It uses a command register architecture to select the operating mod...
Description 1 Mb 128K x 8/ Chip Erase FLASH MEMORY
1 Mb 128K x 8, Chip Erase FLASH MEMORY

File Size 195.96K  /  23 Page

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    M59DR008 M59DR008E M59DR008E100N1T M59DR008E100N6T M59DR008E100ZB1T M59DR008E100ZB6T M59DR008E120N1T M59DR008E120N6T M59

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. M59DR008 M59DR008E M59DR008E100N1T M59DR008E100N6T M59DR008E100ZB1T M59DR008E100ZB6T M59DR008E120N1T M59DR008E120N6T M59DR008E120ZB1T M59DR008E120ZB6T M59DR008EN M59DR008EZB M59DR008F M59DR008F100N1T M59DR008F100N6T M59DR008F100ZB1T M59DR008F100ZB6T M59DR008F120N1T M59DR008F120N6T M59DR008F120ZB1T M59DR008F120ZB6T M59DR008FN M59DR008FZB
OCR Text ...PTION The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis using a 1.65V to 2.2V V DD supply for the circuitry. For Program and Erase operations t...
Description 8 Mbit 512Kb x16, Dual Bank, Page low Voltage Flash Memory

File Size 265.61K  /  37 Page

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    M59DR016 M59DR016C M59DR016C100ZB1T M59DR016C100ZB6T M59DR016C120ZB1T M59DR016C120ZB6T M59DR016CZB M59DR016D M59DR016D10

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. M59DR016 M59DR016C M59DR016C100ZB1T M59DR016C100ZB6T M59DR016C120ZB1T M59DR016C120ZB6T M59DR016CZB M59DR016D M59DR016D100ZB1T M59DR016D100ZB6T M59DR016D120ZB1T M59DR016D120ZB6T M59DR016DZB M59DR016-ZBT
OCR Text ...PTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis using a 1.65V to 2.2V V DD supply for the circuitry. For Program and Erase operations t...
Description 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
16 Mbit 1Mb x16 Dual Bank Page 1.8V Supply Flash Memory

File Size 238.54K  /  37 Page

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    M59DR032A M59DR032A100N1T M59DR032A100N6T M59DR032A100ZB1T M59DR032A100ZB6T M59DR032A120N1T M59DR032A120N6T M59DR032A120

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. M59DR032A M59DR032A100N1T M59DR032A100N6T M59DR032A100ZB1T M59DR032A100ZB6T M59DR032A120N1T M59DR032A120N6T M59DR032A120ZB1T M59DR032A120ZB6T M59DR032AN M59DR032AZB M59DR032B M59DR032B100N1T M59DR032B100N6T M59DR032B100ZB1T M59DR032B100ZB6T M59DR032B120N1T M59DR032B120N6T M59DR032B120ZB1T M59DR032B120ZB6T M59DR032BN M59DR032BZB M59DR032C100N1T M59DR032C100N6T M59DR032C100ZB1T M59DR032C100ZB6T M59DR032C120N1T M59DR032C120N6T M59DR032C120ZB1T M59DR032C120ZB6T M59DR032D100N1T M59DR032D100N6T M59DR032D100ZB1T M59DR032D100ZB6T M59DR032D120N1T M59DR032D120N6T M59DR032D120ZB1T M59DR032D120ZB6T M59DR032E100N1T M59DR032E100N6T M59DR032E100ZB1T M59DR032E100ZB6T M59DR032E120N1T M59DR032E120N6T M59DR032E120ZB1T M59DR032E120ZB6T M59DR032F100N1T M59DR032F100N6T M59DR032F100ZB1T M59DR032F100ZB6T M59DR032F120N1T M59DR032F120N6T M59DR032F120ZB1T M59DR032F120ZB6T
OCR Text ...PTION The M59DR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis using a 1.65V to 2.2V V DD supply for the circuitry. For Program and Erase operations t...
Description 32 Mbit 2Mb x16, Dual Bank, Page low Voltage Flash Memory

File Size 268.42K  /  38 Page

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For non-volatile low Found Datasheets File :: 5224    Search Time::1.391ms    
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