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TY Semiconductor Co., L...
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Part No. |
2SC4705
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Description |
high dc current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage
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File Size |
159.53K /
2 Page |
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it Online |
Download Datasheet
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NEC[NEC] NEC Corp. NEC, Corp.
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Part No. |
NE661M04-T2 NE661M04
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Description |
NPN SILICON RF TRANSISTOR FOR LOW current, LOW NOISE, high-gain AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER minI-MOLD NPN SILICON RF TRANSISTOR FOR LOW current / LOW NOISE / high-gain AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER minI-MOLD NPN SILICON RF TRANSISTOR FOR LOW current, LOW NOISE, high-gain AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER minI-MOLD NPN硅射频晶体管,低噪声,高增益放大平引引脚薄型超小型,低电流模
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File Size |
68.27K /
12 Page |
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it Online |
Download Datasheet
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TY Semiconductor Co., Ltd
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Part No. |
2SA1813
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Description |
Very small-sized package. Adoption of FBET process. high dc current gain (hFE=500 to 1200).
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File Size |
68.07K /
1 Page |
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it Online |
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TY Semicondutor TY Semiconductor Co., Ltd
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Part No. |
2SC1622A
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Description |
NPN Silicon Epitaxial Transistor high dc current gain.Collector-base voltage VCBO 120 V
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File Size |
57.91K /
1 Page |
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it Online |
Download Datasheet
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Price and Availability
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