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    2SD1113 2SD1113K

HITACHI[Hitachi Semiconductor]
Part No. 2SD1113 2SD1113K
OCR Text ...eBO I CeO hFe VCe(sat) VBe(sat) t on t off Min 300 300 7 -- 500 -- -- -- -- typ -- -- -- -- -- -- -- 2.0 23 Max 500 -- -- 100 -- 1.5 2.0 -- ...e = 50 mA, IC = 0 VCe = 300 V, RBe = VCe = 2 V, IC = 4 A*1 I C = 4 A, IB = 40 mA*1 I C = 4 A, IB = ...
Description Silicon NPN triple Diffused

File Size 31.56K  /  5 Page

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    2SD1119

Fuji Electric
Panasonic Semiconductor
Part No. 2SD1119
OCR Text transistor 2SD1119 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm s Features 2.60.1 4.50.1 1.60.2 1.50.1 q q q Low collector to emitter saturation voltage VCe(sat). Satisfactory ope...
Description Silicon NPN epitaxial planer type(For low-frequency power amplification0

File Size 37.58K  /  2 Page

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    2SD1126 2SD1126K

HITACHI[Hitachi Semiconductor]
Part No. 2SD1126 2SD1126K
OCR Text ...Ce(sat)2 VBe(sat)1 VBe(sat)2 VD t on t off 2 2SD1126(K) Maximum Collector Dissipation Curve 60 Collector power dissipation Pc (W) 30 10 IC (max) 3 iC (peak) Area of Safe Operation PW Collector current IC (A) PW = ot sh...
Description Silicon NPN triple Diffused

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    2SD1135

HITACHI[Hitachi Semiconductor]
Part No. 2SD1135
OCR Text ...(Continuous) D (33 V, 1.2 A) 2 (t C O C = per 25 at 1.0 C ion ) 0.5 40 20 Collector current IC (A) 0.2 0.1 (80 V, 0.06 A) 0.05 ...e/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : h...
Description Silicon NPN triple Diffused

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    2SD1138

HITACHI[Hitachi Semiconductor]
Part No. 2SD1138
OCR Text ...a (60 V, 0.4 A) ra tio n (t C = 25 ) C 50 100 150 Ambient temperature ta (C) Case temperature tC (C) typical Output Characterist...e/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : h...
Description Silicon NPN transistor
Silicon NPN triple Diffused

File Size 30.91K  /  6 Page

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    2SD1199

PANASONIC[Panasonic Semiconductor]
Part No. 2SD1199
OCR Text transistor 2SD1199 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 6.90.1 1.5 2.50.1 1.0 s Features q ...e VCB=10V ta=25C Forward current transfer ratio hFe 1500 transition frequency ft (MHz) 30...
Description Silicon NPN epitaxial planer type(For low-frequency amplification)

File Size 38.38K  /  2 Page

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    2SD1211

Panasonic Semiconductor
Part No. 2SD1211
OCR Text transistor 2SD1211 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB987 5.90.2 Unit: mm 4.90....e VCB=10V ta=25C Base to emitter saturation voltage VBe(sat) (V) 500 transition frequency ...
Description Silicon NPN epitaxial planer type(For low-frequency amplification)

File Size 36.83K  /  2 Page

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    2SD2439

SANKEN[Sanken electric]
Part No. 2SD2439
OCR Text ... 125C j- a( C/ W) j-a - t Characteristics 3 transient thermal Resistance typ 10000 5000 DC Curr ent Gain h F e 1 0.5 10000 5000 25C -30C 1000 1000 02 0.5 1 Collector Current I C( A) 5 10 500 0.2 0.5 1 Collecto...
Description Silicon NPN triple Diffused Planar transistor(Audio, Series Regulator and General Purpose)

File Size 24.85K  /  1 Page

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    2SD476 2SD476A 2SD476AK 2SD476K

HITACHI[Hitachi Semiconductor]
Part No. 2SD476 2SD476A 2SD476AK 2SD476K
OCR Text ...at) Gain bandwidth product f t turn on time turn off time Storage time Note: B 60 to 120 t on t off t stg 1. the 2SD476(K) and 2SD476A...e/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : h...
Description Silicon NPN triple Diffused

File Size 32.08K  /  5 Page

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    2SD661 2SD661A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD661 2SD661A
OCR Text transistor 2SD661, 2SD661A Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm 6.90.1 1.5 2.50.1...e Collector output capacitance Cob (pF) VCB=5V ta=25C 20 Cob -- VCB Ie=0 f=1MHz ta=25C 16 F...
Description Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)

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