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  vgs-4 5v Datasheet PDF File

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    ST26C32 ST26C32CF16 ST26C32CP16 ST26C32IF16 ST26C32IP16

Exar, Corp.
EXAR[Exar Corporation]
Part No. ST26C32 ST26C32CF16 ST26C32CP16 ST26C32IF16 ST26C32IP16
Description QUAD RS-422, RS-423 CMOS Differential Line Receiver LINE RECEIVER, PDSO16
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:13.4A; On-Resistance, Rds(on):0.0065ohm; Rds(on) Test Voltage, Vgs:4.5v; Package/Case:8-SOIC; Leaded Process Compatible:No

File Size 69.58K  /  8 Page

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    SI9934BDY SI9934BDY-E3 SI9934BDY-T1-E3

Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
TEMIC Semiconductors
VISAY[Vishay Siliconix]
Part No. SI9934BDY SI9934BDY-E3 SI9934BDY-T1-E3
Description Dual P-Channel 2.5-V (G-S) MOSFET 双P沟道.5 VGS)的MOSFET
Dual P-Channel 2.5-V (G-S) MOSFET P沟道.5 V(GS)的MOSFET

File Size 53.40K  /  5 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDS3992_04 FDS3992 FDS3992NL FDS399204
Description Dual N-Channel PowerTrench? MOSFET 100V, 4.5A, 62m?/a>
Dual N-Channel PowerTrench㈢ MOSFET 100V, 4.5A, 62mз
Discrete Commercial N-Channel PowerTrench MOSFET, 100V, 4.5A, 0.062 Ohms @ VGS = 10V, SO-8 Package

File Size 576.88K  /  11 Page

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    24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR ST25C16B6TR ST25C16M1TR ST25C16M3TR ST25C16M5TR ST25C16M6TR ST24C16 ST

STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. 24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR ST25C16B6TR ST25C16M1TR ST25C16M3TR ST25C16M5TR ST25C16M6TR ST24C16 ST24C16B1TR ST24C16B3TR ST24C16B5TR ST24C16B6TR ST24C16M1TR ST24C16M3TR ST24C16M5TR ST24C16M6TR ST24W16 ST24W16B1TR ST24W16B3TR ST24W16B5TR ST24W16B6TR ST24W16M1TR ST24W16M3TR ST24W16M5TR ST24W16M6TR ST25W16 ST25W16B1TR ST25W16B3TR ST25W16B5TR ST25W16B6TR ST25W16M1TR ST25W16M3TR ST25W16M5TR ST25W16M6TR
Description MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护
16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护
MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5v; Package/Case:MICRO FOOT; Leaded Process Compatible:No
MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes
(ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
16/8/4/2/1KbitSerialICBusEEPROM

File Size 125.39K  /  17 Page

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    AP131 AP131-50Y AP131-15W AP131-15Y AP131-16W AP131-16Y AP131-17W AP131-17Y AP131-18W AP131-18Y AP131-19W AP131-19Y AP13

Diodes, Inc.
TE Connectivity, Ltd.
ANACHIP[Anachip Corp]
ETC[ETC]
Part No. AP131 AP131-50Y AP131-15W AP131-15Y AP131-16W AP131-16Y AP131-17W AP131-17Y AP131-18W AP131-18Y AP131-19W AP131-19Y AP131-20W AP131-20Y AP131-21W AP131-21Y AP131-22W AP131-22Y AP131-23W AP131-23Y AP131-24W AP131-24Y AP131-25W AP131-25Y AP131-26W AP131-26Y AP131-27W AP131-27Y AP131-28W AP131-28Y AP131-29W AP131-29Y AP131-30W AP131-30Y AP131-31W AP131-31Y AP131-32W AP131-32Y AP131-33W AP131-33Y AP131-34W AP131-34Y AP131-35W AP131-35Y AP131-36W AP131-36Y AP131-37W AP131-37Y AP131-38W AP131-38Y AP131-39W AP131-39Y AP131-40W AP131-40Y AP131-41W AP131-41Y AP131-42W AP131-42Y AP131-43W AP131-43Y AP131-44W AP131-44Y AP131-45W AP131-45Y AP131-46W AP131-46Y AP131-47W AP131-47Y AP131-48W AP131-48Y AP131-49W AP131-49Y AP131-50W
Description 1.5A Fast Ultra Low Dropout Linear Regulators 1.5A的快速超低压差线性稳压器
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-55v; Continuous Drain Current, Id:75A; On-Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-220; Leaded Process Compatible:No 300mA低压差线性稳压器,带有关
MOSFET, N D-PAK;; Transistor type:MOSFET; Transistor polarity:N Channel; Voltage, Vds max:30V; Case style:TO-252 (D-Pak); Current, Id cont:63A; Current, Idm pulse:50A; Power, Pd:65.2W; Resistance, Rds on:0.0095R;
LED Lamp; Color:Blue; Luminous Intensity (MSCP):210ucd; Voltage Rating:3.9V; LED Color:Blue; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Terminal Type:Radial Leaded
LED Lamp; Color:Blue; Luminous Intensity (MSCP):15ucd; Voltage Rating:3.9V; LED Color:Blue; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Terminal Type:Radial Leaded
LED Lamp; Color:Blue; Luminous Intensity (MSCP):50ucd; Voltage Rating:3.9V; LED Color:Blue; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Terminal Type:Radial Leaded
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:85A; On-Resistance, Rds(on):3mohm; Rds(on) Test Voltage, Vgs:4.5v; Package/Case:TO-220AB; Leaded Process Compatible:Yes
MOSFET, P TO-220MOSFET, P TO-220; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:30V; Case style:TO-220AB; Current, Id cont:70A; Current, Idm pulse:240A; Power, Pd:187W; Resistance, Rds on:0.007R; Pin
SENSOR, OPTICAL, PHOTOTRANSISTOR O/P; RoHS Compliant: Yes
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:85A; On-Resistance, Rds(on):0.003ohm; Rds(on) Test Voltage, Vgs:4.5v; Package/Case:TO-220; Leaded Process Compatible:No
Optical Sensor (Switch) Reflective; Optocoupler Output Type:Transistor; Leaded Process Compatible:Yes; Voltage Rating:32V
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:70A; On-Resistance, Rds(on):14mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Leaded Process Compatible:No
LED Lamp; Color:Yellow; Luminous Intensity (MSCP):2.5; Viewing Angle:60; Forward Current:7mA; Forward Voltage:2.2V; LED Color:Yellow; Leaded Process Compatible:Yes; Lens Style:(L x W x D) 3 x 2.8 x 1.65 mm; Lens Width:3mm
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:85A; On-Resistance, Rds(on):21mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Leaded Process Compatible:No
Optical Sensor (Switch) Transmissive / Slotted Interrupter; Optocoupler Output Type:Transistor; Leaded Process Compatible:Yes; Voltage Rating:70V
Optical Sensor (Switch) Reflective; Optocoupler Output Type:Transistor; Leaded Process Compatible:Yes; Voltage Rating:70V
LED Lamp; Color:Yellow; Luminous Intensity (MSCP):50; Viewing Angle:60; Voltage Rating:2V; Forward Current:30mA; Forward Voltage:2V; LED Color:Yellow; Leaded Process Compatible:Yes; Mounting Type:Surface Mount
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:75A; On-Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Leaded Process Compatible:No
LED Lamp; Color:Green; Luminous Intensity (MSCP):1.6; Viewing Angle:60; Forward Current:7mA; Forward Voltage:1.9V; LED Color:Green; Leaded Process Compatible:Yes; Lens Style:(L x W x D) 3 x 2.8 x 1.65 mm; Lens Width:3
MOSFET, N TO-220AB
300mA Low Dropout Linear Regulator with Shutdown

File Size 152.71K  /  7 Page

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    HUFA76413DK8T HUFA76413D

FAIRCHILD[Fairchild Semiconductor]
Part No. HUFA76413DK8T HUFA76413D
Description Discrete Commercial Dual N-Channel Logic Level UltraFET Power MOSFET, 60V, 5.1A, 0.049 Ohms @ VGS = 10V, SO-8 Package
N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mз

File Size 207.51K  /  11 Page

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    FDP3682 FDB3682 FDP3682NL

Fairchild Semiconductor
Part No. FDP3682 FDB3682 FDP3682NL
Description N-Channel PowerTrench MOSFET 100V/ 32A/ 36m
N-Channel PowerTrench MOSFET 100V, 32A, 36mз
Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 32A, 0.036 ohm @ Vgs = 10V, TO-220 Package

File Size 216.60K  /  11 Page

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    INTERSIL[Intersil Corporation]
Part No. HCS04MS FN3046 HCS04D HCS04DMSR HCS04HMSR HCS04K HCS04KMSR
Description From old datasheet system
Radiation Hardened Hex Inverter
JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-50V; Zero Gate Voltage Drain Current Min, Idss:0.5mA; Zero Gate Voltage Drain Current Max, Idss:12mA; Gate-Source Cutoff Voltage Max, Vgs(off):-1.5v

File Size 103.81K  /  8 Page

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    Mitel Networks, Corp.
Part No. PT8A990A PT8A991A
Description 50V Single N-Channel HEXFET Power MOSFET in a SOT-89 (TO-243AA) package
MOSFET; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:55A; On-Resistance, Rds(on):16.5mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes; Package/Case:D2PAK; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes 9功能遥控器?

File Size 74.56K  /  10 Page

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    HCF4006B HCF4006BC1 HCF4006BEY HCF4006BM1 HCC_HCF4006B HCC4006B HCC4006BF HCF4006

STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
ST Microelectronics
Part No. HCF4006B HCF4006BC1 HCF4006BEY HCF4006BM1 HCC_HCF4006B HCC4006B HCC4006BF HCF4006
Description    18-STAGE STATIC SHIFT REGISTER
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:50A; On-Resistance, Rds(on):28mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Drain-Source Breakdown Voltage:60V 18 -阶段静态移位寄存器

File Size 259.15K  /  11 Page

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