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HITACHI[Hitachi Semiconductor]
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| Part No. |
HAF2002
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| OCR Text |
.... Value at Ta = 25C Symbol VDSS vgss vgss ID I D(pulse) I DR Pch Tch Tstg
Note2 Note1
Ratings 60 16 -2.8 20 40 20 30 150 -55 to +150
Unit V V V A A A W C C
Typical Operation Characteristics
Item Input voltage Symbol VIH VIL Input... |
| Description |
Silicon N Channel MOS FET Series Power Switching
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| File Size |
37.32K /
7 Page |
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it Online |
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SANYO[Sanyo Semicon Device]
Sanyo Semiconductor
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| Part No. |
FW503 FW503-E
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| OCR Text |
...5 --55 to +125 V V A A C C VDSS vgss ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (2000mm2!0.8mm) 10S -20 10 --3 -12 2 150 --55 to +125 V V A A W C C Symbol Conditions Ratings Unit
Marking : W503
Any and all SANYO... |
| Description |
Pch SBD
FET Transistor: DC / DC Converter Applications
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| File Size |
43.09K /
5 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FM600TU-3A FM600TU-07A
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| OCR Text |
...erwise specified.)
Symbol VDSS vgss ID IDM IDA IS*1 ISM*1 PD*4 PD*4 Tch Tstg Viso -- -- Item Drain-source voltage Gate-source voltage Drain current Avalanche current Source current Maximum power dissipation Channel temperature Storage temp... |
| Description |
HIGH POWER SWITCHING USE INSULATED PACKAGE
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| File Size |
105.03K /
5 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FM600TU-2A
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| OCR Text |
...erwise specified.)
Symbol VDSS vgss ID IDM IDA IS*1 ISM*1 PD*4 PD*4 Tch Tstg Viso -- -- Item Drain-source voltage Gate-source voltage Drain current Avalanche current Source current Maximum power dissipation Channel temperature Storage temp... |
| Description |
HIGH POWER SWITCHING USE INSULATED PACKAGE 大功率开关使用绝缘包
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| File Size |
105.14K /
5 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FM400TU-3A
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| OCR Text |
...erwise specified.)
Symbol VDSS vgss ID IDM IDA IS*1 ISM*1 PD*4 PD*4 Tch Tstg Viso -- -- Item Drain-source voltage Gate-source voltage Drain current Avalanche current Source current Maximum power dissipation Channel temperature Storage temp... |
| Description |
HIGH POWER SWITCHING USE INSULATED PACKAGE
|
| File Size |
105.21K /
5 Page |
View
it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
FM400TU-2A
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| OCR Text |
...erwise specified.)
Symbol VDSS vgss ID IDM IDA IS*1 ISM*1 PD*4 PD*4 Tch Tstg Viso -- -- Item Drain-source voltage Gate-source voltage Drain current Avalanche current Source current Maximum power dissipation Channel temperature Storage temp... |
| Description |
HIGH POWER SWITCHING USE INSULATED PACKAGE
|
| File Size |
105.06K /
5 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FM400TU-07A
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| OCR Text |
...erwise specified.)
Symbol VDSS vgss ID IDM IDA IS*1 ISM*1 PD*4 PD*4 Tch Tstg Viso -- -- Item Drain-source voltage Gate-source voltage Drain current Avalanche current Source current Maximum power dissipation Channel temperature Storage temp... |
| Description |
HIGH POWER SWITCHING USE INSULATED PACKAGE
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| File Size |
105.00K /
5 Page |
View
it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDW9926A 9926A
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| OCR Text |
...circuit applications * Extended vgss range (10V) for battery applications * High performance trench technology for extremely low RDS(ON) * Low profile TSSOP-8 package
Applications
* Battery protection * Load switch * Power management
... |
| Description |
Dual N-Channel 2.5V Specified PowerTrench MOSFET
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| File Size |
108.90K /
5 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDW2501N 2501N
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| OCR Text |
...028 @ VGS = 2.5V
* Extended vgss range (12V) for battery applications. * High performance trench technology for extremely low RDS(ON) * Low profile TSSOP-8 package
Applications
* Load switch * Motor drive * DC/DC conversion * Power ... |
| Description |
Dual N-Channel 2.5V Specified PowerTrench MOSFET
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| File Size |
108.91K /
5 Page |
View
it Online |
Download Datasheet |
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Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDS6679_05 FDS6679 FDS667905 FDS6679NL
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| OCR Text |
...13 m @ VGS = - 4.5 V * Extended vgss range (25V) for battery applications * High performance trench technology for extremely low RDS(ON) * High power and current handling capability
D D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
... |
| Description |
30 Volt P-Channel PowerTrench MOSFET 13000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
30 Volt P-Channel PowerTrench? MOSFET
30 Volt P-Channel PowerTrench㈢ MOSFET
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| File Size |
89.40K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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