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Cystech Electonics Corp...
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Part No. |
MTN2510H8
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OCR Text |
...s 30 a avalanche energy @ l=0.1mh, i d =30a, v dd =25v (note 2) e as 45 repetitive avalanche energy @ l=0.05mh (note...17m v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =3... |
Description |
N-Channel Enhancement Mode Power MOSFET
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File Size |
348.13K /
11 Page |
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Anpec Electronics, Corp.
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Part No. |
APM2023NUC-TRG APM2023NUC-TRL
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OCR Text |
...power dissipation t a =100 c 0.6 w r q ja thermal resistance-junction to ambient 75 c/w note: * current limited by bond wire.
...17m w v gs = 10v i ds = 12.8a 0.00.20.40.60.81.01.21.41.61.8 0.1 1 10 30 t j =150 o c ... |
Description |
7 A, 20 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 GREEN PACKAGE-3 7 A, 20 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 ROHS COMPLIANT PACKAGE-3
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File Size |
126.95K /
11 Page |
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Anpec Electronics Corporation
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Part No. |
APM4542KC-TU APM4542KC-TUL APM4542KC-TR
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OCR Text |
...power dissipation t a =100 c 0.8 w r ja * thermal resistance-junction to ambient 62.5 c/w note: *surface mounted on 1in 2 pad...17m ? v gs = 10v i ds = 7a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 30 t j =150 o c t j ... |
Description |
Dual Enhancement Mode MOSFET (N-and P-Channel)
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File Size |
154.63K /
13 Page |
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Anpec Electronics Corporation
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Part No. |
APM4804KC-TUL
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OCR Text |
... power dissipation t a =100 c 0.8 w r ja * thermal resistance-junction to ambient 62.5 c/w note: *surface mounted on 1in 2 pa...17m ? v gs = 10v i ds = 8a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 30 t j =150 o c t j ... |
Description |
N-Channel Enhancement Mode MOSFET
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File Size |
118.02K /
10 Page |
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it Online |
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Cystech Electonics Corp...
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Part No. |
MTP4835I3
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OCR Text |
...dissipation t a =100 p d 1.0 w single pulse avalanche energy e as 25 *2 mj single pulse avalanche current i as ...17m -v gs , gate-source voltage(v) r ds( on) , static drain-source on- state resistance(m) i d =-1... |
Description |
P-Channel Enhancement Mode Power MOSFET
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File Size |
234.12K /
8 Page |
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it Online |
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