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  0.23ohm Datasheet PDF File

For 0.23ohm Found Datasheets File :: 23    Search Time::6.031ms    
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    IRG4BC30S-SPBF

International Rectifier
Samtec, Inc.
Part No. IRG4BC30S-SPBF
OCR Text ...emperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) irg4bc30s-spbf standard speed igbt insulated gate bipolar transistor e c g n-c...23ohm v = 15v v = 480v g ge cc i = a 36 c i = a 18 c i = a 9 c ? ...
Description LA-MachXO Automotive Non-Volatile PLD For Low-Density Applications; LUTs: 2280; Supply Voltage: 1.2V; I/Os: 271; Grade: -3; Package: Lead-Free ftBGA; Pins: 324; Temp.: AUTO 绝缘栅双极晶体管IGBT的标准速度

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    IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-STRR
OCR Text ...8 20 10 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case ) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt ...23Ohm VGE = 15V VCC = 480V IC = 36 A 10 3.72 IC = 18 A IC = 9.0 A 9A 3.68 1 3.64 ...
Description TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 18A条一(c)|63AB
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度(VCES和\u003d 600V电压的Vce(on)典\u003d.4V,@和VGE \u003d 15V的,集成电路\u003d 18A条)
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A)
600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package

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    LQW18ANR22J00 LQW15AN13NJ00 LQW18AN56NJ00

Murata Manufacturing Co., Ltd.
MURATA MANUFACTURING CO LTD
Part No. LQW18ANR22J00 LQW15AN13NJ00 LQW18AN56NJ00
OCR Text ...0 lqw15a_10 lqw18a_00 lqw18a_10 0.8 0.05 1.0 0.1 1.0 0.1 1.6 0.2 1.6 0.2 w 0.4 0.05 0.5 0.1 0.5 0.1 0.8 0.15 0.8 0.15 w1 0.4 0.05...23ohm 0.23ohm 0.16ohm 0.16ohm 0.26ohm q (min.) test frequency max. of dc resistance 15 15 15 15 15 1...
Description INDUCTOR, 220NH, 5% 1 ELEMENT, 0.22 uH, AIR-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.013 uH, AIR-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.056 uH, AIR-CORE, GENERAL PURPOSE INDUCTOR, SMD

File Size 106.77K  /  7 Page

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    AUIRG4BC30S-S AUIRG4BC30S-SL

International Rectifier
Part No. AUIRG4BC30S-S AUIRG4BC30S-SL
OCR Text ...emperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) w parameter typ. max. units r jc junction-to-case ??? 1.2 r cs case-to-sink,...23ohm v = 15v v = 480v g ge cc i = a 36 c i = a 18 c i = a 9 c ? ...
Description INSULATED GATE BIPOLAR TRANSISTOR

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    IRG4BC30S

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRG4BC30S
OCR Text ... 20 10 100 42 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Paramet...23Ohm VGE = 15V VCC = 480V IC = 36 A 10 3.72 IC = 18 A IC = 9.0 A 9A 3.68 1 3...
Description 600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)典\u003d.4V,@和VGE \u003d 15V的,集成电路\u003d 18A条)

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    IRG4IBC30SPBF

International Rectifier
Part No. IRG4IBC30SPBF
OCR Text ...10 seconds Max. 600 23.5 13.0 68 68 20 10 45 18 -55 to + 150 300 (0.063 in. (1.6mm) from case) Units V A V mJ W C Thermal ...23Ohm VGE = 15V VCC = 480V IC = 36 A 10 3.72 IC = 18 A IC = 9.0A 9A 3.68 1 3.64 ...
Description INSULATED GATE BIPOLAR TRANSISTOR

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    MURATA MANUFACTURING CO LTD
Part No. LQW04AN13NH00B
OCR Text ...frequency horizontal wire wound 0.8 0.05 0.4 0.05 0.15 0.05 (in mm) 0.4 0.05 0.06 +0.09 - 0.03 chip inductor (chip coil) for high freq...23ohm 20 250mhz 8.0ghz lqw04an8n2d00 p 8.2nh 0.5nh 100mhz 350ma 0.23ohm 20 250mhz 8.0ghz lqw04an9n1...
Description 1 ELEMENT, 0.013 uH, GENERAL PURPOSE INDUCTOR, SMD

File Size 71.33K  /  3 Page

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    CPV363M4U

International Rectifier
Part No. CPV363M4U
OCR Text ...g temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw. 5-7 lbf?in (0.55-0.8 n?m) cpv363m4u prelimin...23ohm v = 15v v = 480v g ge cc i = a 13.6 c i = a 6.8 c i = a 3.4 ...
Description 600V UltraFast 8-60 kHz 3-Phase Bridge IGBT in a IMS-2 package

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    BLM03AX800SN1 BLM03AX241SN1 BLM03AX100SN1 BLM03AX121SN1 BLM03AX601SN1 BLM03AX102SN1

Murata Manufacturing Co., Ltd.
Murata Manufacturing Co...
Part No. BLM03AX800SN1 BLM03AX241SN1 BLM03AX100SN1 BLM03AX121SN1 BLM03AX601SN1 BLM03AX102SN1
OCR Text ...eries (0201 size) c dimensions 0.60.03 0.30.03 0.30.03 0.150.05 (in mm) : electrode c equivalent circuit (resistance element becomes domin...23ohm max. -55 to +125c blm03ax241sn1 p 240ohm 25% - 350ma 0.38ohm max. -55 to +125c blm03ax601sn1 p...
Description EMIFIL (Inductor type) Chip Ferrite Bead

File Size 81.81K  /  3 Page

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    Xian Semipower Electronic Technology Co., Ltd.
Part No. SWC1N60L SW1N60L
OCR Text ...us drain current (@t c =25 o c) 0.3 a continuous drain current (@t c =100 o c) 0.18 a i dm drain current pulsed ...23ohm 1 2 3 sw1n60l samwin 1. gate 2. drain 3. source 1 2 3 to - 92 item sales type marking packag...
Description N-channel MOSFET

File Size 454.53K  /  7 Page

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