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  0.40-2.80v Datasheet PDF File

For 0.40-2.80v Found Datasheets File :: 7570    Search Time::6.672ms    
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    2SB950 2SB950A 2SD1276A 2SD1276

PANASONIC CORP
PANASONIC[Panasonic Semiconductor]
Part No. 2SB950 2SB950A 2SD1276A 2SD1276
OCR Text ...tary to 2SD1276 and 2SD1276A 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 Unit: mm 7.50.2 s Features q q q High foward current ...40 2 150 -55 to +150 Unit V 16.70.3 3.10.1 14.00.5 s Absolute Maximum Ratings Parameter...
Description Silicon PNP epitaxial planar type Darlington(For power amplification and switching)

File Size 60.93K  /  2 Page

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    2SB951 2SB951A 2SD1277A 2SD1277

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SB951 2SB951A 2SD1277A 2SD1277
OCR Text 0.70.1 For midium-speed switching Complementary to 2SD1277 and 2SD1277A 10.00.2 5.50.2 2.70.2 4.20.2 4.20.2 Unit: mm 7.50.2 ...40.1 1.30.2 14.00.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base v...
Description Silicon PNP epitaxial planar type Darlington(For midium-speed switching)

File Size 69.42K  /  3 Page

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    2SB954 2SB954A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB954 2SB954A
OCR Text ... s Features q q q Unit: mm 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2 s Absolute Maximum Ratings (TC=25C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings...
Description Silicon PNP epitaxial planar type(For power amplification)

File Size 45.35K  /  2 Page

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    2SK2764-01R

FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
Part No. 2SK2764-01R
OCR Text ...h=25C Min. 800 3,5 Typ. 4,0 10 0,2 10 3,19 2 450 75 40 20 40 50 25 1,0 450 3 Max. 4,5 500 1,0 100 4,0 4 Unit V V A mA nA S pF pF pF ns ns ns ns A V ns C - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-...
Description N-channel MOS-FET

File Size 292.33K  /  2 Page

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    AD8615 AD8615ARJ AD8618 AD8615AD8616AD8618 AD8618ARU AD8616 AD8616AR AD8616ARM AD8618AR

AD[Analog Devices]
adi
Part No. AD8615 AD8615ARJ AD8618 AD8615AD8616AD8618 AD8618ARU AD8616 AD8616AR AD8616ARM AD8618AR
OCR Text ...= 0V -40< TA < +125C RL =2 k To 0.01% VCM = 0V to 3V RL = 2 k VO= 0.5V to 2.5V AD8615/AD8616/AD8618 Min Typ 80 Max 300 750 0.2 60 100 100 30 50 500 3 Units V V pA pA pA pA pA pA V dB V/mV V/C V V 35 50 mV mV mA dB mA mA V/s s MHz degre...
Description Precision 20 MHz CMOS Single Rail-to-Rail Input/Output Operational Amplifier
Precision 20 MHz CMOS Rail-to-Rail Input/Output Operational Amplifiers

File Size 190.13K  /  5 Page

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    IRF1310NL IRF1310NS

IRF[International Rectifier]
Part No. IRF1310NL IRF1310NS
OCR Text ... VDSS =100V G S RDS(on) = 0.036 ID = 42A Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces...40 Units C/W 5/13/98 IRF1310NS/L Electrical Characteristics @ TJ = 25C (unless otherwise ...
Description Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 152.94K  /  10 Page

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    IRF1310N

IRF[International Rectifier]
Part No. IRF1310N
OCR Text ... VDSS = 100V G S RDS(on) = 0.036 ID = 42A Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces...40 4.5 7.5 1900 450 230 Max. Units Conditions --- V V GS = 0V, ID = 250A --- V/C Reference to 25C...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A)
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 92.91K  /  8 Page

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    IRF1310S

IRF[International Rectifier]
Part No. IRF1310S
OCR Text ...ation. VDSS = 100V RDS(on) = 0.04 ID = 41A SMD-220 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 2...40 62 Units C/W ** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended foo...
Description Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)

File Size 319.11K  /  8 Page

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    IRF3710L IRF3710S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710L IRF3710S
OCR Text ...d D VDSS = 100V RDS(on) = 0.025 G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing...40 180 3.8 200 1.3 20 530 28 20 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A ...
Description Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.025ohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A)
Power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)

File Size 180.61K  /  10 Page

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    IRF3710 IRF3710PBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710 IRF3710PBF
OCR Text ...unction-to-Ambient Typ. --- 0.50 --- Max. 0.75 --- 62 Units C/W www.irf.com 1 01/17/02 IRF3710 Electrical Characteris...40 -20 0 20 40 60 80 V GS = 10V 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) TJ , ...
Description Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 23mohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A)
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 92.57K  /  8 Page

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For 0.40-2.80v Found Datasheets File :: 7570    Search Time::6.672ms    
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