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ADPOW[Advanced Power Technology]
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| Part No. |
APT8018L2VFR
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| OCR Text |
0.180
POWER MOS V(R) FREDFET
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new techn...43A @ 25C VGS = 15V VDD = 400V ID = 43A @ 25C RG = 0.6 MIN TYP MAX UNIT
10700 1180 610 610 60 360... |
| Description |
MOSFET
POWER MOS V FREDFET
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| File Size |
131.88K /
4 Page |
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Kersemi Electronic Co., Ltd.
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| Part No. |
IRF2807SPBF IRF2807LPBF
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| OCR Text |
...nits r jc junction-to-case ??? 0.75 r ja junction-to-ambient (pcb mount)** ??? 40 thermal resistance c/w www.kersemi.com
...43a, v gs = 0v t rr reverse recovery time ??? 100 150 ns t j = 25c, i f = 43a q rr reverse rec... |
| Description |
Advanced Process Technology Ultra Low On-Resistance
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| File Size |
4,244.31K /
10 Page |
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Kersemi Electronic Co., Ltd.
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| Part No. |
IRF2807PBF
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| OCR Text |
0.65 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 thermal resistance 1 v dss = 75v r ds(on) = 1...43a, v gs = 0v t rr reverse recovery time ??? 100 150 ns t j = 25c, i f = 43a q rr reverse rec... |
| Description |
Advanced Process Technology
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| File Size |
3,069.62K /
8 Page |
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it Online |
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Kersemi Electronic Co., Ltd.
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| Part No. |
IRF1010NPBF
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| OCR Text |
0.85 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 thermal resistance 1 v dss = 55v r ds(on) = 1...43a, v gs = 0v t rr reverse recovery time ??? 69 100 ns t j = 25c, i f = 43a q rr reverse reco... |
| Description |
Advanced Process Technology Ultra Low On-Resistance
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| File Size |
3,064.95K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
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| OCR Text |
...te)**
Typ.
--- ---
Max.
0.85 40
Units
C/W
www.irf.com
1
02/14/02
IRF1010NS/IRF1010NL
Electrical Characteristics @ TJ ...43A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 43A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VG... |
| Description |
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?
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| File Size |
144.82K /
10 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT8018L2VR_06 APT8018L2VR APT8018L2VR06
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| OCR Text |
0.180
POWER MOS V(R) MOSFET
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new techno...43A @ 25C VGS = 15V VDD = 400V ID = 43A @ 25C RG = 0.6 MIN TYP MAX UNIT
10700 1180 610 610 60 360... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
151.44K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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