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  1 3v Datasheet PDF File

For 1 3v Found Datasheets File :: 144896    Search Time::4.094ms    
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    2SA2091S 2SA2091STPQ

TE Connectivity, Ltd.
ROHM[Rohm]
Part No. 2SA2091S 2SA2091STPQ
OCR Text 1) High speed switching. (Tf : Typ. : 30ns at IC = -1A) 2) Low saturation voltage, typically (Typ. : -200mV at IC = -0.5A, IB = -50mA) 3) St...3v VCE= -2V -10 IC / IB=10 / 1 Ta=25C COLLECTOR SATURATION VOLTAGE : VCE (sat) DC CUR...
Description 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR SPT, SC-72, 3 PIN
Medium power transistor (60V/ 1A)
Medium power transistor (−60V, −1A)
Medium power transistor (-60V, -1A)

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    2SA2093

ROHM[Rohm]
Part No. 2SA2093
OCR Text 1) High speed switching. (Tf : Typ. : 30ns at IC = -2A) 2) Low saturation voltage, typically (Typ. : -200mV at IC = -1.0A, IB = -0.1A) 3) St...3v VCE= -2V -1 -1 IC / IB=20/1 IC / IB=10/1 10 -0.1 Ta=125C Ta=25C Ta= -40C -0.1 ...
Description Power transistor ( 60V/2A)
Power transistor (−60V, −2A)
Power transistor (-60V, -2A)

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    2SA2113

ROHM[Rohm]
Part No. 2SA2113
OCR Text 1) High speed switching. (Tf : Typ. : 20ns at IC = -2A) 2) Low saturation voltage, typically (Typ. : -200mV at IC = -1A, IB = -0.1A) 3) Stro...3v VCE= -2V -1 Ta=125C Ta=25C Ta= -40C -0.1 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) DC...
Description Medium power transistor ( 30V/2A)
Medium power transistor (−30V, −2A)
Medium power transistor (-30V, -2A)

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    2SA935

Rohm Co., Ltd.
TEL[TRANSYS Electronics Limited]
Part No. 2SA935
OCR Text ...mb=25) TO-92L TRANSISTOR (PNP) 1. EMITTER 2. COLLECTOR 3. BASE Collector current : -0.7 A ICM Collector-base voltage V(BR)CBO : -8...3v, IC=-100mA IC=-500mA, IB=-50mA VCE=-10V, IC=-50mA VCB=-10V, IE=0, f=1MHz -80 -80 -5 -0.5 -0.5 ...
Description TO-92L Plastic-Encapsulated Transistors 92L塑料封装晶体

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    2SB1180 2SB1180A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1180 2SB1180A
OCR Text ...3.50.2 0 to 0.15 2.50.2 (1.0) (1.0) 1.10.1 1.00.2 Absolute Maximum Ratings TC = 25C Parameter Collector-base voltage (Emi...3v Cob VCB 104 IE=0 f=1MHz TC=25C Safe operation area -100 Non repetitive pulse TC=25C IC...
Description Silicon PNP epitaxial planar type darlington

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    2SB1181 2SB1260 2SB1241

ROHM[Rohm]
Part No. 2SB1181 2SB1260 2SB1241
OCR Text 1) High breakdown voltage and high current. BVCEO= -80V, IC=-1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863...3v, IC=-0.1A Conditions !Packaging specifications and hFE Package Code Type 2SB1260 2SB1241 2SB1...
Description Power Transistor

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    2SB1189 2SB1238

Rohm
Part No. 2SB1189 2SB1238
OCR Text 1) High breakdown voltage, BVCEO=-80V, and high current, IC=-0.7A. 2) Complements the 2SD1767 / 2SD1859. !External dimensions (Units : mm) ...3v/-0.1A VCE=-10V, IE=50mA, f=100MHz VCB=-10V, IE=0A, f=1MHz Conditions 4.5 1.6 (2) ...
Description Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Medium power transistor

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    2SB772 B772 UTC2SB772

友顺科技股份有限公司
UTC[Unisonic Technologies]
Part No. 2SB772 B772 UTC2SB772
OCR Text ...oltage *Complement to 2SD882 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise spe...3v,Ic=0 VCE=-2V,Ic=-20mA VCE=-2V,Ic=-1A Ic=-2A,IB=-0.2A Ic=-2A,IB=-0.2A VCE=-5V,Ic=-0.1A VCB=-10V,IE...
Description MEDIUM POWER LOW VOLTAGE TRANSISTOR
PNP EPITAXIAL SILICON TRANSISTOR

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    2SB938 2SB938A 2SD1261A 2SD1261

PANASONIC[Panasonic Semiconductor]
Part No. 2SB938 2SB938A 2SD1261A 2SD1261
OCR Text ...2 6.00.5 3.40.3 Unit: mm 1.00.1 q q q High foward current transfer ratio hFE High-speed switching N type package enabling direc...3v, IC = - 0.5A VCE = -3v, IC = -3A VCE = -3v, IC = -3A IC = -3A, IB = -12mA IC = -5A, IB = -20mA VC...
Description Silicon PNP epitaxial planar type Darlington(For power amplification and switching)

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    2SB939 2SB939A 2SD1262A 2SD1262

PANASONIC[Panasonic Semiconductor]
Part No. 2SB939 2SB939A 2SD1262A 2SD1262
OCR Text ...50.2 6.00.5 3.40.3 Unit: mm 1.00.1 s Features q q q High foward current transfer ratio hFE High-speed switching N type package en...3v, IC = -4A VCE = -3v, IC = -8A IC = -4A, IB = -8mA IC = -4A, IB = -8mA VCE = -10V, IC = - 0.5A, f ...
Description Silicon PNP epitaxial planar type Darlington

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