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IXYS, Corp.
IXYS[IXYS Corporation]
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| Part No. |
FMM200-0075P
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| OCR Text |
...SS = 75 V RDSon = 3.5 m
T1
1
1 2
T2
5
MOSFET T1/T2 Symbol VDSS VGS ID25 ID90 IF25 IF90 TC = 25C TC = 90C (diode) TC = 25C (di...FMM 200-0075P
Component Symbol IRMS TVJ Tstg VISOL FC Symbol Cp dS,dA dS,dA Weight IISOL 1 mA; 5... |
| Description |
Trench Power MOSFET 200 A, 75 V, 0.0045 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
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| File Size |
33.88K /
2 Page |
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IXYS[IXYS Corporation]
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| Part No. |
FMM200-004PL
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| OCR Text |
...VDSS RDSon typ. = 2.8 m
5 4 1 2
T2
1
5
MOSFET T1/T2 Symbol VDSS VGS ID25 ID90 IF25 IF90 TC = 25C TC = 90C (body diode) TC = 25...FMM 200-004PL
Component Symbol IRMS TVJ Tstg VISOL FC Symbol Cp dS,dA dS,dA Weight IISOL 1 mA; 50/... |
| Description |
MOSFET Modules
Trench Power MOSFET
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| File Size |
41.44K /
2 Page |
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it Online |
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IXYS[IXYS Corporation]
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| Part No. |
FMM75-01F
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| OCR Text |
1 2
T2 T1
ID25 = 75 A = 100 V VDSS RDSon typ. = 18 m
1 5
MOSFET T1/T2 Symbol VDSS VGS ID25 ID90 IF25 IF90 dv/dt EAR Symbol TC = 2...FMM 75-01F
Component Symbol TVJ Tstg VISOL FC Symbol Cp dS,dA dS,dA Weight IISOL 1 mA; 50/60 Hz mo... |
| Description |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFET Phaseleg Topology in ISOPLUS i4-PACTM
From old datasheet system
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| File Size |
41.84K /
2 Page |
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it Online |
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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
IRG4RC10SD IRG4RC10SDTR IRG4RC10SDTRL IRG4RC10SDTRR
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| OCR Text |
...s
* Extremely low voltage drop 1.1V(typ) @ 2A * S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up t...FMM V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
www.irf.... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A) 绝缘栅双极型晶体管，超快软恢复二极管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.10V，@和VGE \u003d 15V的，集成电路\u003d 2.0安培
600V DC-1 kHz (Standard) Copack IGBT in a D-Pak package
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| File Size |
187.77K /
10 Page |
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it Online |
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Sharp Corporation
SHARP[Sharp Electrionic Components]
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| Part No. |
LT230A LT230
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| OCR Text |
...itivity Y Operating point <20mT 1 4 Combining a GaAs Hall device and an IC in a compact package (2.9X1.5X1.1mm) Wide operation temperature range obtained by GaAs Hall device (-20 to +125C) 2 3 Long life time due to noncontact-type
0.4 2.90... |
| Description |
GaAs Hall IC for Noncontact Switch (Unidirestional magnetic field-type)
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| File Size |
22.00K /
2 Page |
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Sharp, Corp.
SHARP[Sharp Electrionic Components]
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| Part No. |
LT262A
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| OCR Text |
...3
0.4 0.6
(Unit : Fmm)
Y 1 4
2.90.2 1.9
0.85
S 2
0.4
Z
3
0.4
0.95
X 4-R0.2 Hall device center line X : +0.050.23mm against package center Y : -0.050.1mm against package lead center between No.2 and No.3 termina... |
| Description |
GaAs Hall IC for Noncontact Switch(Alternating magnetic field-type*) 砷化镓霍IC的非接触式开关（交变磁场
GaAs Hall IC for Noncontact Switch (Alternating magnetic field-type)
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| File Size |
22.47K /
2 Page |
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it Online |
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Price and Availability
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