|
|
 |
IRF[International Rectifier]
|
Part No. |
IRHQ57214SE
|
OCR Text |
...8 53 2.6 -- -- 1.5 4.5 -- 10 25 100 -100 8.0 2.1 3.4 25 20 35 20 -- -- -- -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Refe...125V VDD = 125V, ID = 1.9A VGS =12V, RG = 7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD... |
Description |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)
|
File Size |
175.06K /
8 Page |
View
it Online |
Download Datasheet
|
|
|
 |
??『绉???′唤?????? Unisonic Technologies Co., Ltd. 友顺科技股份有限公司 UTC[Unisonic Technologies]
|
Part No. |
MJE13003L-X-TA3-F-T MJE13003 MJE13003-TO-220 MJE13003-X-TA3-F-T
|
OCR Text |
...ed SOA with Inductive Load @ Tc=100 * Inductive Switching Matrix 0.5 ~ 1.5 Amp, 25 and 100 Typical tc = 290ns @ 1A, 100 . * 700V Blocking Ca...125V, IC=1A, IB1=IB2=0.2A, tP=25 s, Duty Cycle 1%
0.05 0.5 2 0.4
0.1 1 4 0.7
s s s s 2 of 7... |
Description |
NPN EPITAXIAL SILICON TRANSISTOR npn型外延硅晶体
|
File Size |
144.27K /
7 Page |
View
it Online |
Download Datasheet
|
|
|
 |
FAIRCHILD[Fairchild Semiconductor]
|
Part No. |
MJE13007F
|
OCR Text |
...(sat)[V], SATURATION VOLTAGE
100
10
VCE = 5V
IC = 3 IB
hFE, DC CURRENT GAIN
1
VBE(sat)
10
0.1
V CE(sat)
1 0...125V IC =5IB
1 0.1 10 0.1 1 10
1
10
100
1000
VCB[V], COLLECTOR-BASE VOLTAGE
IC[A]... |
Description |
High Voltage Switch Mode Application
|
File Size |
50.06K /
5 Page |
View
it Online |
Download Datasheet
|
|
|
 |
FAIRCHILD[Fairchild Semiconductor]
|
Part No. |
MJE13009F
|
OCR Text |
...(sat)[V], SATURATION VOLTAGE
100
10
VCE = 5V
IC = 3 IB
hFE, DC CURRENT GAIN
1
V BE(sat)
10
0.1
VCE (sat)
1 ...125V IC =5IB
Cob[pF], CAPACITANCE
tR, tD [s], TURN ON TIME
100
1000
tR
10
100
... |
Description |
High Voltage Switch Mode Application
|
File Size |
49.79K /
5 Page |
View
it Online |
Download Datasheet
|
|
|
 |
NTE[NTE Electronics]
|
Part No. |
NTE2381 NTE2380
|
OCR Text |
... - - - - - - - - - - - 60 50 50 100 60 150 30 50 ns ns ns ns ns ns ns ns Crss - - - - 40 80 pF pF Coss - - - - 150 200 pF pF Ciss VDS = 25V, VGS = 0, f = 1MHz - - - - 400 100 pF pF gFS ID = 1A VDS 7.5V VDS = 15V rDS(on) VGS(th) VDS = VGS I... |
Description |
Complementary Silicon Gate MOSFETs Enhancement Mode, High Speed Switch
|
File Size |
28.75K /
3 Page |
View
it Online |
Download Datasheet
|
|
|
 |
ROHM[Rohm]
|
Part No. |
RDN080N25
|
OCR Text |
...ectrical characteristic curves
100 TC=25C Single Pulse
20 Ta=25C 18 Pulsed
10V 9V 8V
100 VDS=10V Pulsed
DRAIN CURRENT : ID (A)
D...125V VDD=200V VDS
1000
Ciss(pF)
VGS
100
Coss(pF)
12.5
REVERSE RECOVERY TIME : t... |
Description |
Switching (250V, 8A)
|
File Size |
51.16K /
4 Page |
View
it Online |
Download Datasheet
|
|
|
 |
SEMIWELL[SemiWell Semiconductor]
|
Part No. |
SBN13003A
|
OCR Text |
... IB2 = -0.5A Vclamp = 300V TC = 100 C IB = 0.1A IB = 0.25A IB = 0.5A IB = 0.1A IB = 0.25A VCE = 2V VCE = 2V VCC = 125V IB2 = - 0.2A TC = 100 C
Min
-
Typ
-
Max
1.0 5.0
-
Units
mA
400
-
V
VCE(sat)
Collector-Emi... |
Description |
From old datasheet system High Voltage Fast-Switching NPN Power Transistor
|
File Size |
631.87K /
6 Page |
View
it Online |
Download Datasheet
|
|
|
 |
UNISONIC TECHNOLOGIES CO LTD UTC[Unisonic Technologies]
|
Part No. |
MJE13002
|
OCR Text |
...V=Rated Value, VBE(off)=1.5V,Tc=100)
unless otherwise noted)
SYMBOL
VCEO(SUS) ICEV
MIN
300
TYP
MAX
UNIT
V mA
Emitter...125V,Ic=1A, Rise Time IB1=IB2=0.2A,tp=25s, Storage Time Duty Cycle1%) Fall Time INDUCTIVE LOAD, CLAM... |
Description |
1.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126 NPN SILICON POWER TRANSISTOR
|
File Size |
147.77K /
7 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|