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				PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
Part No.	BUK555-200 BUK555-200A BUK555-200B
OCR Text	...c level FET BUK555-200A/B 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating 10 Zth j-mb / (K/W) BU...200 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10000 Ciss 1000 100 Cos...
Description	PowerMOS transistor Logic level FET 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
File Size	70.01K / 7 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	BYW51-200
OCR Text	...erse voltage (volts) 060 40 100 120 400 800 0.08 0.04 0.02 8.0 4.0 2.0 200 40 20 80 t j = 175 c i r 20 80 200 figure 2. typical reverse current, per leg* t c , case temperature ( c) 140 155 150 0 2.0 1.0 3.0 5.0 4.0 10 7.0 6.0 i 145 180 ...
Description	8A, 100V - 200V Ultrafast Dual Diodes(8A, 100V - 200V 超快速二极管) 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
File Size	56.08K / 4 Page	View it Online	Download Datasheet

				GE Security, Inc. GE[General Semiconductor]
Part No.	ZGL41-200 ZGL41-100 ZGL41-110 ZGL41-120 ZGL41-130 ZGL41-140 ZGL41-150 ZGL41-160 ZGL41-170 ZGL41-180 ZGL41-190
OCR Text	...S) ZGL41-100 ZGL41-110 ZGL41-120 ZGL41-130 ZGL41-140 ZGL41-150 ZGL41-160 ZGL41-170 ZGL41-180 ZGL41-190 ZGL41-200 100 110 120 130 140 150 160 170 180 190 200 3.7 3.4 3.1 2.9 2.7 2.5 2.3 2.2 2.1 2.0 1.9 250 300 380 450 525 600 700...
Description	Surface Mount Glass Passivated Zener(表贴型钝化玻璃齐纳二极管) 表面安装玻璃钝化齐纳（表贴型钝化玻璃齐纳二极管）
File Size	39.80K / 2 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	BLF7G20L-200 BLF7G20LS-200 BLF7G20L-200-15
OCR Text	...alues p l(av) (w) 0 200 160 80 120 40 014aab189 18.0 17.5 18.5 19.0 g p (db) 17.0 (3) (2) (1) p l(av) (w) 0 200 160 80 120 40 014aab190 20 40 60 d (%) 0 (1) (2) (3) blf7g20l-200_7g20ls-200 all information provided in this document is s...
Description	Power LDMOS transistor
File Size	125.78K / 13 Page	View it Online	Download Datasheet

				STMicro
Part No.	BYW51G-200 5659
OCR Text	...oad duration (ISOWATT220AB). 120 110 100 90 80 70 60 50 40 30 IM 20 10 0 0.001 IM(A) I 80 M(A) 70 60 50 Tc=25 oC Tc=25 oC Tc=50...200 Fig. 12: Peak reverse current versus dIF/dt. Fig. 13: Dynamic parameters versus junction temper...
Description	HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES From old datasheet system
File Size	91.09K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK455-200 BUK455-200A BUK455-B200B BUK455-200B BUK455
OCR Text	... 4.5 7.5 MAX. 1750 250 80 30 60 120 50 UNIT S pF pF pF ns ns ns ns nH nH nH REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tmb = 25 C...200 1000 Ciss Coss 100 Crss -60 -20 20 60 Tj / C 100 140 180 10 ...
Description	PowerMOS transistor
File Size	69.53K / 7 Page	View it Online	Download Datasheet

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