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18mh Datasheet PDF File

For 18mh Found Datasheets File :: 85 Search Time::2.14ms
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					SONY[Sony Corporation]
Part No.	DVP-C600D
OCR Text	... 250V R101 470K 1/2W ! L101 18mh 0.5A C102 0.1F 250V ! D101 S1NB60 L511 10H 2.6A 2 R301 68 PC101 TLP721F R303 1K R304 1.5K ! ! C104 1000pF 250V E C103 1000pF 250V ! C107 470pF 250V 4.3 + C301 1F 5...
Description	US Model, Canadian Model, Mexican Model
File Size	7,865.52K / 26 Page	View it Online	Download Datasheet

					Fairchild Semiconductor
Part No.	IRFW840A IRFI840A
OCR Text	...imum Junction Temperature (2) L=18mh, IAS=8A, VDD=50V, RG=27, Starting TJ =25C (3) ISD 8A, di/dt 160A/s, VDD BVDSS , Starting TJ =25C (4) Pulse Test: Pulse Width = 250s, Duty Cycle 2% (5) Essentially Independent of Operating Temperature...
Description	Advanced Power MOSFET
File Size	223.16K / 7 Page	View it Online	Download Datasheet

					Intersil Corporation
Part No.	IRF220 IRF221 IRF222 IRF223
OCR Text	... 10V, starting TJ = 25oC, L = 6.18mh, RG = 50, peak IAS = 5A. See Figures 15, 16. 3 IRF220, IRF221, IRF222, IRF223 Typical Performance Curves Unless Otherwise Specified 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 5 ...
Description	4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs 4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs
File Size	68.23K / 7 Page	View it Online	Download Datasheet

					IRF[International Rectifier]
Part No.	IRF6610
OCR Text	...ature. Starting TJ = 25C, L = 0.18mh, RG = 25, IAS = 12A. www.irf.com 1 05/25/05 IRF6610 Static @ TJ = 25C (unless otherwise specified) Parameter BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw...
Description	HEXFET Power MOSFET Silicon Technology with the advanced DirectFETTM
File Size	234.19K / 9 Page	View it Online	Download Datasheet

					http:// International Rectifier
Part No.	IRL1104SPBF IRL1104LPBF
OCR Text	...= 15V, starting TJ = 25C, L = 0.18mh RG = 25, IAS = 62A. (See Figure 12) Pulse width 300s; duty cycle 2%. Uses IRL1104 data and test conditions. Calculated continuous current based on maximum allowable ISD 62A, di/dt 217A/s, V...
Description	HEXFET Power MOSFET
File Size	219.89K / 10 Page	View it Online	Download Datasheet

					International Rectifier
Part No.	IRF830APBF
OCR Text	...ig. 11 ) Starting TJ = 25C, L = 18mh RG = 25, IAS = 5.0A. (See Figure 12) ISD 5.0A, di/dt 370A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss whi...
Description	HEXFET Power MOSFET
File Size	154.63K / 8 Page	View it Online	Download Datasheet

					International Rectifier
Part No.	IRF6622
OCR Text	...ture. Starting TJ = 25C, L = 0.18mh, RG = 25, IAS = 12A. www.irf.com 1 04/04/06 IRF6622 Static @ TJ = 25C (unless otherwise specified) Parameter BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw...
Description	DirectFET Power MOSFET
File Size	233.77K / 9 Page	View it Online	Download Datasheet

					International Rectifier
Part No.	IRHNA63164 IRHNA67164
OCR Text	... = 50V, starting TJ = 25C, L= 0.18mh Peak IL = 56A, VGS = 12V A ISD 56A, di/dt 860/s, VDD 150V, TJ 150C A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias. 12 volt VGS applied and V DS = 0 during irradiation...
Description	RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2)
File Size	136.03K / 8 Page	View it Online	Download Datasheet

					MITSUMI[Mitsumi Electronics, Corp.]
Part No.	C8-R6L C8-R5L C8-R6D C8-R5D C8-R4D C8-R4L C8-R
OCR Text	...01~9mH 0.01~30mH 0.01~10mH 0.01~18mh 0.01~60mH Operational Frequency 10~300kHZ 10~300kHZ 10~300kHZ 10~300kHZ 10~300kHZ 10~300kHZ Pcs/Reel 1000 1000 1000 1000 1000 1000 MITSUMI Transformers for Inverter or Converter DATA LIST Induc...
Description	Transformers for Inverter or Converter
File Size	65.80K / 2 Page	View it Online	Download Datasheet

					TT electronics Semelab, Ltd. Seme LAB
Part No.	SML20W65 SML20B56
OCR Text	...re. 2) Starting TJ = 25C, L = 1.18mh, RG = 25, Peak IL = 65A 3) Maximum current limited by package. 200 65 260 30 40 400 3.2 -55 to 150 300 65 50 2500 V A A V W W/C C A mJ Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455...
Description	HIGH POWER TERMINATION 56 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	25.85K / 2 Page	View it Online	Download Datasheet

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