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  1a 650v Datasheet PDF File

For 1a 650v Found Datasheets File :: 222    Search Time::1.375ms    
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    FSDH0165

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FAIRCHILD[Fairchild Semiconductor]
Part No. FSDH0165
OCR Text 1a SenseFET PowerSwitch Precision Fixed Operating Frequency (100kHz) Internal Start-up Switch UVLO with Hysterisis (6.7V/8.7V) Over Load Pro...650v and 1a. 2 Vfb 3,4,5,6 7 GND Vcc 8 Drain 2 FSDH0165 Electrical Charac...
Description From old datasheet system
Fairchild Power Switch(SPS)
Fairchild Power Switch(FPS)

File Size 92.10K  /  8 Page

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    SSU04N65 SSU04N65-15

SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
Part No. SSU04N65 SSU04N65-15
OCR Text ...change q gd - 6.1 - nc i d =1a v ds =520v v gs =10v turn-on delay time t d(on) - 11.2 - rise time t r - 18.8 - turn-off delay ...650v , r ds(on) 2.6 ? n-ch enhancement mode power mosfet 17-jun-2013 rev. b page 3 of 4 htt...
Description N-Ch Enhancement Mode Power MOSFET
   N-Ch Enhancement Mode Power MOSFET

File Size 416.24K  /  4 Page

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    IPW65R125C7

Infineon Technologies AG
Part No. IPW65R125C7
OCR Text ...gle pulse e as - - 89 mj i d =7.1a; v dd =50v; see table 10 avalanche energy, repetitive e ar - - 0.44 mj i d =7.1a; v dd =50v; see table 10...650vcoolmos?c7powertransistor ipw65r125c7 rev.2.0,2013-10-11 final data sheet 3thermalc...
Description Motor driver IC

File Size 1,962.95K  /  15 Page

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    HY2N65D

HY ELECTRONIC CORP.
Part No. HY2N65D
OCR Text ... ds(on) =4.6 w @v gs =10v, i d =1a gate-source voltage v gs i d 2 2 continuous drain current + 30 pulsed drain current 1) i dm 8 8 p d 43.8...650v v gs =0v v gs = + 30v v ds =0v zero gate voltage drain current gate body leakage current gate...
Description 650v / 2A N-Channel Enhancement Mode MOSFET

File Size 138.06K  /  4 Page

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    SFT66781 TR0019D

Solid States Devices, Inc
Solid States Devices, I...
Part No. SFT66781 TR0019D
OCR Text ..., t a = 25c v ce = 3v, 1 c = 1a, t a = 25c v ce = 3v, 1 c = 15a,t a = -55c h fe1 h fe2 h fe3 8 15 4 20 40 - base-emitter saturation voltage* (i c = 15a, i b = 3a) v be (sat) - 1.5 v collector-emitter saturatio...
Description NPN High Speed Power Transistor
   NPN High Speed

File Size 196.12K  /  3 Page

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    IPL65R130C7

Infineon Technologies AG
Part No. IPL65R130C7
OCR Text ...gle pulse e as - - 89 mj i d =7.1a; v dd =50v avalanche energy, repetitive e ar - - 0.44 mj i d =7.1a; v dd =50v avalanche current, single p...650vcoolmos?c7powertransistor ipl65r130c7 rev.2.0,2013-04-29 final data sheet 3thermalc...
Description MOSFET
650v CoolMOS C7 Power Transistor

File Size 1,788.01K  /  15 Page

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    MR2540 MR2520

Shindengen Electric Mfg.Co.Ltd
Part No. MR2540 MR2520
OCR Text ...e waveform at Po = 1.1W (11V, 0.1a), for a worldwide input Po = 100W power supply for TV applications. Standby Po - Pin 2.5 Input voltage Pin [W] 2 1.5 1 0.5 0 0 0.5 1 AC110V AC230V 1.5 Output voltage Po [W] Fig.7 Input Voltage in...
Description Standby Compatible Partial Resonance Power Supply IC Module with High-speed IGBT

File Size 179.54K  /  7 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOK18N65
OCR Text ...=1mhz switching parameters i s =1a,v gs =0v v ds =40v, i d =9a forward transconductance turn-on rise time gate source charge gate drain char...650v,18a n-channel mosfet 3/5 typical electrical and thermal characteristics 0 10 20 30 40 0 5 10 ...
Description 650v,18A N-Channel MOSFET

File Size 530.72K  /  5 Page

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    IPP65R280E6 IPB65R280E6 IPA65R280E6 IPI65R280E6 IPW65R280E6

Infineon Technologies AG
Part No. IPP65R280E6 IPB65R280E6 IPA65R280E6 IPI65R280E6 IPW65R280E6
OCR Text ...e voltage drain current i dss --1a v ds =650 v, v gs =0 v, t j =25 c -10- v ds =650 v, v gs =0 v, t j =150 c gate-source leakage current...650v coolmos? e6 power transistor ipx65r280e6 electrical characteristics final data sheet 7 rev. ...
Description 650v CoolMOS E6 Power Transistor

File Size 2,010.56K  /  19 Page

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