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004404 2N5551 TA1077A 225M0 122ML 03100 FRS9140H BY254
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  30a 400v Datasheet PDF File

For 30a 400v Found Datasheets File :: 1014    Search Time::1.843ms    
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    APTC60HM45SCTG

Microsemi Corporation
Part No. APTC60HM45SCTG
OCR Text ... t c = 85c 30 a i f = 30a 1.1 1.15 i f = 60a 1.4 v f diode forward voltage i f = 30a t j = 125c 0.9 v t j ...400v 100 pf thermal and package characteristics symbol characteristic min typ max un...
Description Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module

File Size 235.68K  /  8 Page

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    IDP30E60 IDP30E60-09

INFINEON TECHNOLOGIES AG
Infineon Technologies A...
Part No. IDP30E60 IDP30E60-09
OCR Text ...500 a forward voltage drop i f =30a, t j =25c i f =30a, t j =150c v f - - 1.5 1.5 2 - v 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 ...400v, t j = 125c 200 300 400 500 600 700 800 a/s 1000 d i f /d t 100 150 200 250 300 350 400 ns...
Description 52.3 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC
Fast Switching Diode

File Size 256.85K  /  8 Page

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    SKW15N60 SKB15N60 SKP15N60

INFINEON[Infineon Technologies AG]
Part No. SKW15N60 SKB15N60 SKP15N60
OCR Text ...R CURRENT 10A 50s 50A 40A 30a TC=110C 20A 10A 0A 10Hz TC=80C 200s 1A 1ms Ic DC 0.1A 1V 10V 100V 1000V 100Hz 1kHz 10kHz...400v, VGE = 0/+15V, RG = 21) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0,...
Description IGBTs & DuoPacks - 15A 600V TO247AC IGBT Diode
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Fast S-IGBT in NPT-Technology with An...

File Size 445.74K  /  14 Page

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    APTC60DHM45T1G

Microsemi Corporation
Part No. APTC60DHM45T1G
OCR Text ...j = 25C Tj = 125C Tc = 80C IF = 30a IF = 60A IF = 30a Tj = 125C Tj = 25C IF = 30a VR = 400v di/dt =200A/s Tj = 125C Tj = 25C Tj = 125C Min 600 Typ Max 25 500 Unit V A A Maximum Reverse Leakage Current DC Forward Current Diode...
Description Asymmetrical bridge Super Junction MOSFET Power Module

File Size 248.81K  /  7 Page

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    APTC60DDAM70T1G

Microsemi Corporation
Part No. APTC60DDAM70T1G
OCR Text ...j = 25C Tj = 125C Tc = 80C IF = 30a IF = 60A IF = 30a Tj = 125C Tj = 25C IF = 30a VR = 400v di/dt =200A/s Tj = 125C Tj = 25C Tj = 125C Min 600 Typ Max 25 500 Unit V A A Maximum Reverse Leakage Current DC Forward Current Diode...
Description Dual boost chopper Super Junction MOSFET Power Module

File Size 248.34K  /  7 Page

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    APTGV100H60BTPG

Microsemi Corporation
Part No. APTGV100H60BTPG
OCR Text ...j = 25C Tj = 125C Tc = 80C IF = 30a IF = 60A IF = 30a IF = 30a VR = 400v di/dt =200A/s Min 600 Typ Max 250 500 Unit V A A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage VR=600V Tj = 125C Tj = 2...
Description Boost chopper CoolMos垄芒 full bridge NPT & Trench Field Stop IGBT Power module

File Size 461.88K  /  15 Page

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    APTGV100H60T3G

Microsemi Corporation
Part No. APTGV100H60T3G
OCR Text ...j = 25C Tj = 125C Tc = 80C IF = 30a IF = 60A IF = 30a IF = 30a VR = 400v di/dt =200A/s Min 600 Typ Max 250 500 Unit V A A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage VR=600V Tj = 125C Tj = 2...
Description Full - Bridge NPT & Trench Field Stop垄莽 IGBT Power module

File Size 370.21K  /  9 Page

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    STTA6006TV1 STTA6006TV2

STMICROELECTRONICS
Part No. STTA6006TV1 STTA6006TV2
OCR Text ...stic mains. description i f(av) 30a / 2 x 30a v rrm 600v t rr (typ) 35ns v f (max) 1.5v main product characteristics symbol parameter valu...400v i f =30a di f /dt = -240 a/ m s di f /dt = -500 a/ m s20 19 a s factor softness factor tj ...
Description 30 A, 600 V, SILICON, RECTIFIER DIODE

File Size 393.85K  /  9 Page

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    IKP20N60T IKP20N60TA IKW20N60T

Infineon Technologies AG
Infineon Technologies A...
Part No. IKP20N60T IKP20N60TA IKW20N60T
OCR Text ... z 1khz 10khz 100khz 0a 10a 20a 30a 40a 50a 60a t c =110c t c =80c i c , c o l l e c t o r c u r r e n t 1v 10v 100v 1000v 0.1a 1a 10a 10s...400v, v ge = 0/+15v, r g = 12 ? ) figure 2 . safe operating area ( d = 0, t c = 25 ? c, t j ? 175 ? ...
Description IGBT in TrenchStop? and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
   IGBT in TrenchStop? and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

File Size 741.32K  /  14 Page

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    IXGH36N60B3C1

IXYS Corporation
Part No. IXGH36N60B3C1
OCR Text ...=125C VCE = 0V, VGE = 20V IC = 30a, VGE = 15V, Note 1 Characteristic Values Min. Typ. Max. 3.0 5.0 35 1.25 100 1.5 1.8 V A mA nA V (c...400v, RG = 5 Note 2 Inductive load, TJ = 25C IC = 30a, VGE = 15V VCE = 400v, RG = 5 Note 2 IC = 30a...
Description GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode

File Size 175.50K  /  6 Page

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