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30mh Datasheet PDF File

For 30mh Found Datasheets File :: 186 Search Time::3.016ms
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				Fairchild Semiconductor
Part No.	FQA7N90M
OCR Text	...mum junction temperature 2. L = 30mh, IAS = 7.0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 7.0A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating te...
Description	900V N-Channel MOSFET
File Size	675.67K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	SSH7N90A
OCR Text	...aximum Junction Temperature y L=30mh, IAS=7A, VDD=50V, RG=27, Starting TJ =25C z ISD 8A, di/dt 170A/s, VDD BVDSS, Starting TJ =25C { Pulse Test: Pulse Width 250s, Duty Cycle 2% \| Essentially Independent of Operating Temperature 2 ...
Description	N-Channel Power Mosfets
File Size	244.69K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FQE10N20C FQE10N20CTU
OCR Text	...mum junction temperature 2. L = 30mh, IAS = 4.0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 9.5A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating te...
Description	200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET
File Size	625.22K / 8 Page	View it Online	Download Datasheet

				Sanyo
Part No.	2SC4696
OCR Text	...=0 V(BR)CEO IC=1mA, RBE= Es/b L=30mh, RBE=100 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support system...
Description	NPN Epitaxial Planar Silicon Darlington Transistor Driver Applications
File Size	77.26K / 3 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF6601
OCR Text	...part. Starting TJ = 25C, L = 0.30mh, RG = 25W, IAS = 21A. (See Figure 14) Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be fou...
Description	DirectFET⑩ Power MOSFET(Vdss=20V) DirectFET Power MOSFET(Vdss=20V)
File Size	128.55K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRFS750 IRFS750A
OCR Text	...ximum Junction Temperature 2 OL=30mh, I =8.4A, V =50V, R =27 , Starting T =25 C 3 _ _ _ OI < 17A, di/dt < 250A/ s, V < BV , Starting T =25 C 4 Pulse Test : Pulse Width = 250 Duty Cycle <2% _ s, O 5 O Essentially Independent of Operating Te...
Description	Advanced Power MOSFET
File Size	273.30K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	SSP6N70A
OCR Text	...imum Junction Temperature 2 O L=30mh, I AS=6A, VDD=50V, RG=27, Starting T J =25 C 3 _ _ _ O ISD < 6A, di/dt <140A/ s, VDD <BVDSS , Starting T J =25 C 4 _ O Pulse Test : Pulse Width = 250 s, Duty Cycle <2% 5 O Essentially Independent of Oper...
Description	Advanced Power MOSFET
File Size	250.35K / 7 Page	View it Online	Download Datasheet

				FORMOSA[Formosa MS]
Part No.	CMT2N7002 CMT2N7002G
OCR Text	...50V, VGS = 10V, IAS = 0.8A, L = 30mh, RG = 25) -55 to 150 417 300 J J /W J Non-repetitive Symbol VDSS VDGR ID IDM VGS VGSM PD Value 60 60 115 800 20 40 225 1.8 9.6 V V mW mW/J mJ Unit V V mA Gate-to-Source Voltage Formosa MS ELECTRI...
Description	SMALL SIGNAL MOSFET
File Size	139.14K / 4 Page	View it Online	Download Datasheet

				International Rectifier FAIRCHILD[Fairchild Semiconductor]
Part No.	IRLM120A IRLM120ATF
OCR Text	...Maximum Junction Temperature L=30mh, IAS=2.3A, VDD=25V, RG=27, Starting TJ =25 oC ISD < 9.2A, di/dt < 300A/s, VDD < BVDSS , Starting TJ =25 oC Pulse Test : Pulse Width = 250s, Duty Cycle < 2% Essentially Independent of Operating Tempera...
Description	Advanced Power MOSFET HEXFET Power MOSFET 100V N-Channel Logic Level A-FET N-CHANNEL MOSFET
File Size	228.46K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	SSW_I5N60A
OCR Text	...Maximum Junction Temperature L=30mh, IAS=4.5A, VDD=50V, RG=25, Starting TJ =25 ISD4.5A, di/dt100A/s, VDDBVDSS , Starting TJ =25 Pulse Test : Pulse Width = 250s, Duty Cycle 2% Essentially Independent of Operating Temperature N-CHANNE...
Description	Advanced Power MOSFET
File Size	228.37K / 7 Page	View it Online	Download Datasheet

For 30mh Found Datasheets File :: 186 Search Time::3.016ms
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