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  36a Datasheet PDF File

For 36a Found Datasheets File :: 1166    Search Time::2.265ms    
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    IRFU2905Z IRFR2905 IRFR2905Z

IRF[International Rectifier]
Part No. IRFU2905Z IRFR2905 IRFR2905Z
OCR Text ...25C, ID = 1mA m VGS = 10V, ID = 36a e V S A VDS = VGS, ID = 250A VDS = 25V, ID = 36a VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V ID = 36a VDS = 44V VGS = 10V VDD = 28V ID = 36a RG = 15 VGS = 10V e ...
Description 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package
AUTOMOTIVE MOSFET

File Size 209.23K  /  11 Page

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    IRFU3706 IRFR3706 IRFR3706PBF IRFR3706TR IRFR3706TRL IRFR3706TRR IRFU3706PBF

IRF[International Rectifier]
Part No. IRFU3706 IRFR3706 IRFR3706PBF IRFR3706TR IRFR3706TRL IRFR3706TRR IRFU3706PBF
OCR Text ...o 25C, ID = 1mA VGS = 10V, ID = 36a VGS = 4.5V, ID = 28A VGS = 2.8V, ID = 18A VDS = VGS, ID = 250A VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, T J = 125C VGS = 12V VGS = -12V Dynamic @ TJ = 25C (unless otherwise specified) Symbol gfs Q...
Description 20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=75A?)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=75A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=75A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=75A?
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package

File Size 131.57K  /  10 Page

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    SSD40N03

SeCoS Halbleitertechnologie GmbH
Part No. SSD40N03
OCR Text 36a, 30V,RDS(ON)21m[ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description TO-252 The SSD40N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and c...
Description N-Channel Enhancement Mode Power Mos.FET

File Size 625.41K  /  5 Page

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    Infineon Technologies A...
Part No. IDB18E120
OCR Text ...1.2 1.4 1.6 1.8 2 2.2 v 2.6 v f 36a 18a 9a 20 1 3 -0 7 -0 2 rev.2 . 3 page 5 idb18e120 5 typ. reverse recovery time t rr = f (d i f /d t ) parameter: v r = 800v, t j = 125c 200 300 400 500 600 700 800 a/s 1000 d i f /d t 100 200 30...
Description 1200 V Emitter Controlled technology

File Size 360.58K  /  8 Page

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    UTT36N05G-AA3-T UTT36N05-15

Unisonic Technologies
Part No. UTT36N05G-AA3-T UTT36N05-15
OCR Text ...gies co., ltd qw-r502-654.b 36a, 50v n-ch a nnel enhancement mode power mosfet transistor ? description the utc utt36n05 is an n-channel enhancement power mosfet using utc?s advanced technology to provide the customers with pe...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR

File Size 218.16K  /  6 Page

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    HDM09-12B-D05 HDM09-12B-D12 HDM09-12B-D15 HDM09-12B-S03 HDM09-12B-S05 HDM09-12B-S09 HDM09-12B-S12 HDM09-12B-S15 HDM09-12

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HITRON ELECTRONICS CORPORTION
Part No. HDM09-12B-D05 HDM09-12B-D12 HDM09-12B-D15 HDM09-12B-S03 HDM09-12B-S05 HDM09-12B-S09 HDM09-12B-S12 HDM09-12B-S15 HDM09-12B-S24 HDM09-24B-D05 HDM09-24B-D12 HDM09-24B-D15 HDM09-24B-S03 HDM09-24B-S05 HDM09-24B-S09 HDM09-24B-S12 HDM09-24B-S15 HDM09-24B-S24 HDM09-48B-D05 HDM09-48B-D12 HDM09-48B-D15 HDM09-48B-S03 HDM09-48B-S05 HDM09-48B-S09 HDM09-48B-S12 HDM09-48B-S15 HDM09-48B-S24 HDM09-D HDM09-S
OCR Text ...PUT (A) +VO1 -VO2 0.85A 0.85A 0.36a 0.36a 0.30A 0.30A 0.85A 0.85A 0.36a 0.36a 0.30A 0.30A 0.85A 0.85A 0.36a 0.36a 0.30A 0.30A CASE SIZE DM2B DM2B DM2B DM2B DM2B DM2B DM2B DM2B DM2B "" Double Feedback. MECHANICAL DIMENSIONS: MM [INC...
Description PCB-MOUNT DC-DC CONVERTER ENCAPSULATED MODULES 9 WATTS SINGLE & DUAL OUTPUT

File Size 203.63K  /  2 Page

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    IRGS4630DPBF IRGS4630DPBF-15

International Rectifier
Part No. IRGS4630DPBF IRGS4630DPBF-15
OCR Text ... ce = 9.0a i ce = 18a i ce = 36a fig. 8 - typ. diode forward voltage drop characteristics 0 1 2 3 4 5 6 7 8 v ce (v) 0 10 20 30 40 50 60 70 80 90 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 51 01 52 0 v ge (...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 1,258.42K  /  15 Page

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    2SK383004 2SK3830

Sanyo Semicon Device
Part No. 2SK383004 2SK3830
OCR Text ...S=0 VDS=10V, ID=1mA VDS=10V, ID=36a ID=36a, VGS=10V ID=36a, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz Ratings min 60 1 10 1.2 18 45 12.5 21 3500 500 350 16 27 2.6 typ max Unit V A A V S m m pF pF pF Marking : K3830 Co...
Description N-Channel Silicon MOSFET General-Purpose Switching Device Applications

File Size 39.11K  /  4 Page

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    APT36N90BC3G

Microsemi Corporation
Microsemi, Corp.
Part No. APT36N90BC3G
OCR Text 36a APT36N90BC3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. C OLMOS O Power Semiconductors Super Junction MOSFET TO -24 7 D3 * Ultra Low RDS(ON) * Low Miller Capacitance * Ultra Low Gate Charge, Qg * Avalanche...
Description Super Junction MOSFET
Power MOSFET; Package: TO-247 [B]; ID (A): 36; RDS(on) (Ohms): 0.12; BVDSS (V): 900; 36 A, 900 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

File Size 133.82K  /  5 Page

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