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  3a 650v Datasheet PDF File

For 3a 650v Found Datasheets File :: 186    Search Time::9.469ms    
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    MJ13100 MJ13101

Inchange Semiconductor Company Limited
Part No. MJ13100 MJ13101
OCR Text ...Output Capacitance IC= 15A; IB= 3a IC= 15A; IB= 3a;TC=100 IC= 20A; IB= 4A IC= 15A; IB= 3a IC= 15A; IB= 3a;TC=100 VCEV=650v;VBE(off)=1.5V VCEV=650v;VBE(off)=1.5V;TC=100 VCEV=750V;VBE(off)=1.5V VCEV=750V;VBE(off)=1.5V;TC=100 VCE= 650v; RBE= 5...
Description Silicon NPN Power Transistors

File Size 106.39K  /  2 Page

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    STF6NM60N STP6NM60N STD6NM60N STD6NM60N-1

STMicroelectronics
Part No. STF6NM60N STP6NM60N STD6NM60N STD6NM60N-1
OCR Text ... VGS, ID = 250A VGS= 10V, ID= 2.3a 2 3 0.85 Min 600 40 1 100 100 Typ Max Unit V V/ns A A nA V IDSS IGSS VGS(th) RDS(on) 1. 4 0.92 Characteristics value at turn off on inductive load Table 5. Symbol gfs (1) Ciss Coss...
Description N-channel 600V - 0.85Ω - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh Power MOSFET
N-channel 600V - 0.85Ω - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh?/a> Power MOSFET
N-channel 600V - 0.85ヘ - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh⑩ Power MOSFET

File Size 596.41K  /  17 Page

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    2N6678M3A

Seme LAB
Part No. 2N6678M3a
OCR Text ... 2 ma i c = 15a i b = 3a 1.0 v ce(sat) (1) collector-emitter saturation voltage t a = 125c 2 v be(sat) (1) base-emitter saturation voltage i c = 15a i b = 3a 1.5 v i c = 1.0a v ce = 3v 15 40...
Description SILICON MULTI-EPITAXIAL NPN TRANSISTOR

File Size 589.32K  /  3 Page

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    IPZ65R019C7

Infineon Technologies AG
Part No. IPZ65R019C7
OCR Text ...0 0.019 - w v gs =10v, i d =58.3a, t j =25c v gs =10v, i d =58.3a, t j =150c gate resistance r g - 0.45 - w f =1mhz,opendrain table5...650vcoolmos?c7powertransistor ipz65r019c7 rev.2.0,2013-04-30 final data sheet table7rev...
Description 650v CoolMOS C7 Power Transistor

File Size 1,528.17K  /  15 Page

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    Icemos Technology
Part No. ICE47N65W
OCR Text ...hange 1 sp - 47n65w - 000 - 3a 06/05/2013 d s g to247 1:g, 2:d, 3:s, 4:d, (to - 247) halogen free preliminary ...650v, v gs =0v, t j =25 o c - 0.1 1 a v ds =650v, v gs =0v, t j =150 o c - - ...
Description N-Channel Enhancement Mode MOSFET

File Size 542.02K  /  8 Page

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    Icemos Technology
Part No. ICE60N150
OCR Text ...=source . sp - 60n150 - 000 - 3a 06/05/2013 halogen free preliminary data sheet ice60n150 parameter symbol conditions ...650v, v gs =0v, t j =25 o c - 0.1 1 a v ds =650v, v gs =0v, t j =150 o c - - ...
Description N-Channel Enhancement Mode MOSFET

File Size 556.65K  /  9 Page

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    Icemos Technology
Part No. ICE15N65
OCR Text ...change 1 sp - 15n65 - 000 - 3a 06/05/2013 d s g t0220 standard metal heatsink 1=gate, 2=drain, 3=source . halogen ...650v, v gs =0v, t j =25 o c - 0.1 1 a v ds =650v, v gs =0v, t j =150 o c - - ...
Description N-Channel Enhancement Mode MOSFET

File Size 556.32K  /  9 Page

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    Icemos Technology
Part No. ICE13N65
OCR Text ...change 1 sp - 13n65 - 000 - 3a 06/05/2013 d s g t0220 standard metal heatsink 1=gate, 2=drain, 3=source . halogen ...650v, v gs =0v, t j =25 o c - 0.1 1 a v ds =650v, v gs =0v, t j =150 o c - - ...
Description N-Channel Enhancement Mode MOSFET

File Size 556.12K  /  9 Page

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    MJ13070 MJ13071

Inchange Semiconductor Company Limited
Part No. MJ13070 MJ13071
OCR Text ...ent Gain Output Capacitance IC= 3a; IB= 0.6A IC= 3a; IB= 0.6A;TC=100 B B MJ13070/13071 CONDITIONS MIN 400 TYP. MAX UNIT ...650v;VBE(off)=1.5V VCEV=650v;VBE(off)=1.5V;TC=100 VCEV=750V;VBE(off)=1.5V VCEV=750V;VBE(off)=1.5V;TC...
Description isc Silicon NPN Power Transistors

File Size 106.19K  /  2 Page

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For 3a 650v Found Datasheets File :: 186    Search Time::9.469ms    
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