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4 194 304 Datasheet PDF File

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				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F
OCR Text	...ESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), acce...
Description	4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
File Size	223.25K / 20 Page	View it Online	Download Datasheet

				BYTES[Bytes] ETC[ETC]
Part No.	SMAJ24A SMAJ18C SMAJ18CA SMAJ22C SMAJ22CA SMAJ43C SMAJ43CA SMAJ10C SMAJ10CA SMAJ100C SMAJ100CA SMAJ8.0 SMAJ8.0C SMAJ8.0CA SMAJ8.5C SMAJ8.5CA SMAJ6.0C SMAJ6.0CA SMAJ6.5 SMAJ6.5C SMAJ6.5CA SMAJ40C SMAJ40CA SMAJ30 SMAJ30C SMAJ30CA SMAJ85C SMAJ85CA SMAJ33C SMAJ33CA SMAJ26C SMAJ26CA SMAJ5.0C SMAJ5.0CA SMAJ15C SMAJ15CA SMAJ14C SMAJ14CA SMAJ14A SMAJ60C SMAJ60CA SMAJ58C SMAJ51C SMAJ51CA SMAJ28 SMAJ17 SMAJ24 SMAJ16 SMAJ12 SMAJ150 SMAJ90A SMAJ10 SMAJ100 SMAJ100A SMAJ10A SMAJ11 SMAJ110 SMAJ110A SMAJ11A SMAJ11C SMAJ11CA SMAJ120 SMAJ120A SMAJ12A SMAJ12C SMAJ12CA SMAJ13 SMAJ130 SMAJ130A SMAJ13A SMAJ13C SMAJ13CA SMAJ14 SMAJ15 SMAJ150A SMAJ15A SMAJ160 SMAJ160A SMAJ16A SMAJ16C SMAJ16CA SMAJ170 SMAJ170A SMAJ17A SMAJ17C SMAJ17CA SMAJ18 SMAJ18A SMAJ20 SMAJ20A SMAJ20C SMAJ20CA SMAJ22 SMAJ22A SMAJ24C SMAJ24CA SMAJ26 SMAJ26A SMAJ28A SMAJ28C SMAJ28CA SMAJ30A SMAJ33 SMAJ33A SMAJ36 SMAJ36C SMAJ36CA SMAJ40 SMAJ40A SMAJ43 SMAJ43A SMAJ45 SMAJ45A SMAJ45C SMAJ45CA SMAJ48 SMAJ48A SMAJ48C SMAJ48CA SMAJ5.0 SMAJ51 SMAJ51A SMAJ54 SMAJ54A SMAJ54C SMAJ54CA SMAJ58 SMAJ58A SMAJ58CA SMAJ6.0 SMAJ60 SMAJ60A SMAJ64 SMAJ64A SMAJ7.0 SMAJ7.0C SMAJ7.5 SMAJ7.5C SMAJ70 SMAJ70A SMAJ75 SMAJ75A SMAJ78 SMAJ78A SMAJ8.5 SMAJ85 SMAJ85A S
OCR Text	...) .058(1.47) .052(1.32) .177(4.50) .157(3.99) .110(2.79) .100(2.54) MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-0 rate ...194(4.93) .012(0.31) .006(0.15) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ...
Description	SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS
File Size	296.18K / 4 Page	View it Online	Download Datasheet

				ISSI[Integrated Silicon Solution, Inc] ISSI[Integrated Silicon Solution Inc] Integrated Silicon Solution Inc Integrated Silicon Solution, Inc.
Part No.	IS61LV25616AL IS61LV25616AL-10B IS61LV25616AL-10BI IS61LV25616AL-10K IS61LV25616AL-10KI IS61LV25616AL-10LQ IS61LV25616AL-10LQI IS61LV25616AL-10T IS61LV25616AL-10TI IS61LV25616AL-12B IS61LV25616AL-12K IS61LV25616AL-12KI IS61LV25616AL-12T IS61LV25616AL-12TI 61LV25616AL
OCR Text	... IS61LV25616AL is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques,...
Description	20 AMP MINIATURE PC BOARD RELAY 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 12 ns, PDSO44
File Size	64.23K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000BS-5
OCR Text	4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6) are optional features of this family. All of th...
Description	4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns
File Size	826.10K / 35 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM416C4000C KM416C4100C KM416C4000CS-5
OCR Text	4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time ( -5 or -6) are optional features of this family. All of this f...
Description	4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns
File Size	898.34K / 35 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM416C4004C KM416C4104C KM416C4004CS-5
OCR Text	4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-5 or -6) are optional features of this family...
Description	4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 50ns
File Size	943.13K / 36 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	LE28F4001C LE28F4001CTS LE28F4001CTS-12
OCR Text	...16 A15 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 pin TSOP Normal (Top View) 32 31 30 29 28 27 26 25 24 23 22 ...194,304 Bit SuperFlash EEPROM Cell Array Y-DECODER CE OE WE CONTROL LOGIC I/O BUFFERS & DAT...
Description	4M-Bit (512k 8) Flash EEPROM 4M-Bit (512k 】 8) Flash EEPROM 4M-Bit (512k 8) Flash EEPROM 4M-Bit (512k × 8) Flash EEPROM
File Size	167.02K / 15 Page	View it Online	Download Datasheet

				AMIC Technology, Corp. AMIC Technology Corporation AMICC[AMIC Technology]
Part No.	LP62S16256E-I LP62S16256EU-55LLI LP62S16256EU-70LLI LP62S16256EV-55LLI LP62S16256EV-70LLI
OCR Text	...6E-I is a low operating current 4,194,304-bit static random access memory organized as 262,144 words by 16 bits and operates on low power voltage from 2.7V to 3.3V. It is built using AMIC's high performance CMOS process. Inputs and three-st...
Description	256K X 16 BIT LOW VOLTAGE CMOS SRAM 256 × 16位低电压CMOS的SRAM
File Size	165.09K / 15 Page	View it Online	Download Datasheet

				AMIC Technology, Corp. AMICC[AMIC Technology]
Part No.	LP62S16256F-T LP62S16256FU-70LLT LP62S16256FV-70LLT
OCR Text	...6F-T is a low operating current 4,194,304-bit static random access memory organized as 262,144 words by 16 bits and operates on low power voltage from 2.7V to 3.3V. It is built using AMIC's high performance CMOS process. Inputs and three-st...
Description	256K X 16 BIT LOW VOLTAGE CMOS SRAM 256 × 16位低电压CMOS的SRAM
File Size	157.80K / 14 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	M5M4V4405CJ M5M4V4405CTP-6 M5M4V4405CTP-6S M5M4V4405CTP-7 M5M4V4405CTP-7S M5M4V4405TP-7S M5M4V4405TP-6S M5M4V4405TP-7 M5M4V4405TP-6 M5M4V4405CJ-6 M5M4V4405CJ-6S M5M4V4405CJ-7 M5M4V4405CJ-7S M5M4V4405CJSERIES
OCR Text	...4194304-BIT (1048576-WORD BY BY 4-BIT) DYNAMIC RAM EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD 4-BIT) DYNAMIC RAM DESCRIPTION This is a family of 1048576-word by 4-bit dynamic RAMS, fabricated with the high performance CMOS process,and...
Description	EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC EDO (HYPER PAGE MODE) 4194304-BIT (1048576-WORD BY 4-BIT) DYNAMIC RAM EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
File Size	291.91K / 27 Page	View it Online	Download Datasheet

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