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Vishay Semiconductors
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Part No. |
BAW27-TAP BAW27-TR
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OCR Text |
...nt Power dissipation VR = 0 l = 4 mm, TL = 45 C l = 4 mm, TL 25 C tp = 1 s Test condition Symbol VRRM VR IFSM IF IFAV Ptot Ptot Value 75 60 4 600 300 440 500 Unit V V A mA mA mW mW
Thermal Characteristics
Tamb = 25 C, unless otherwise ... |
Description |
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File Size |
86.67K /
3 Page |
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Vishay Semiconductors
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Part No. |
1N4148-P-TAP 1N4148-P-TR
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OCR Text |
...nt Power dissipation VR = 0 l = 4 mm, TL = 45 C l = 4 mm, TL 25 C tp = 1 s Test condition Symbol VRRM VR IFSM IFRM IF IFAV Ptot Ptot Value 100 75 2 500 300 150 440 500 Unit V V A mA mA mA mW mW
Thermal Characteristics
Tamb = 25 C, unle... |
Description |
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File Size |
98.85K /
4 Page |
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Vishay Semiconductors
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Part No. |
BAY135-TAP BAY135-TR
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OCR Text |
...nce junction to ambient air l = 4 mm, t l = constant r thja 350 k/w junction temperature t j 175 c storage temperature range t stg - 65 to + 175 c
www.vishay.com 2 document number 85552 rev. 1.8, 17-aug-10 bay135 vishay semiconductors f... |
Description |
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File Size |
88.03K /
3 Page |
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Vishay Semiconductors
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Part No. |
1N4148-TAP
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OCR Text |
...av 150 ma power dissipation l = 4 mm, t l = 45 c p tot 440 mw l = 4 mm, t l ? 25 c p tot 500 mw parameter test condition symbol value unit thermal resistance junction to ambient air l = 4 mm, t l = constant r thja 350 k/w junction temp... |
Description |
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File Size |
96.64K /
4 Page |
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Vishay Semiconductors
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Part No. |
1N914-tap
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OCR Text |
... i fsm 4a power dissipation i = 4 mm, t l = 25 c p tot 500 mw parameter test condition symbol value unit thermal resistance junction to ambient air i = 4 mm, t l = constant r thja 300 k/w junction temperature t j + 175 c storage ... |
Description |
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File Size |
88.32K /
3 Page |
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it Online |
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