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IRF[International Rectifier]
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| Part No. |
FA38SA50LC
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| OCR Text |
... fig. 11 )
ISD 38A, di/dt 410a/s, VDD V(BR)DSS,
TJ 150C
Starting TJ = 25C, L = 0.80mH
RG = 25, IAS = 38A. (See Figure 12)
Pulse width 300s; duty cycle 2%.
2
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FA38SA50LC
1000
VGS 1 5V 10V 8.0V 7.0V 6... |
| Description |
500V Single N-Channel HEXFET Power MOSFET in a SOT-227 (Iso) package
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| File Size |
167.34K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRF530NS IRF530L IRF530NL IRF530NSTRL IRF530NSTRR IRF530NLPBF
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| OCR Text |
...e Figure 12) ISD 9.0A, di/dt 410a/s, VDD V(BR)DSS, TJ 175C Pulse width 400s; duty cycle 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to ... |
| Description |
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
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| File Size |
602.97K /
10 Page |
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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
IRHM8260 IRHM3260 IRHM4260 IRHM7260
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| OCR Text |
...35A, VGS =12V ISD 35A, di/dt 410a/s, VDD 200V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Tota... |
| Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE(T0-254AA) 抗辐射功率MOSFET的通孔T0 254AA
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| File Size |
263.31K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRHNB8260 IRHNB3260 IRHNB4260 IRHNB7260
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| OCR Text |
...43A, VGS =12V ISD 43A, di/dt 410a/s, VDD 200V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total ... |
| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) | SMT
RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
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| File Size |
114.68K /
8 Page |
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it Online |
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Sirectifier Semiconductors
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| Part No. |
3TA130GK03NB 3TA130GK04NB 3TA130GKXXNB
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| OCR Text |
...wave, Tj=150oC On-State Current 410a, Tj=25oC Inst. measurement Tj=25oC, IT=1A, VD=6V Tj=150oC, VD=1/2VDRM IT=100A, IG=200mA, Tj=25oC, VD=1/2VDRM, dIG/dt=1A/us Tj=150 C, VD=2/3VDRM, Exponential wave Tj=25oC Junction to case (1/3 Module)
o
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| Description |
Three Phase Half Bridge
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| File Size |
871.29K /
3 Page |
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