| |
|
 |
Infineon Technologies A...
Infineon Technologies AG
|
| Part No. |
IPB80P03P3L-04 IPI80P03P3L-04 IPP80P03P3L-04
|
| OCR Text |
...reshold voltage, VGS = VDS
ID=-430A
Zero gate voltage drain current
V DS=-30V, VGS=0, Tj=25C V DS=-30V, VGS=0, Tj=150C3)
A -0.1 -10
10
-1 -100
100 nA
Gate-source leakage current
V GS=20V, VDS =0
I GSS RDS(on)
-
D... |
| Description |
OptiMOS-P Power-Transistor
80 A, 30 V, 0.004 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB GREEN, PLASTIC, TO-263, 3 PIN
|
| File Size |
223.00K /
4 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
MICROSEMI[Microsemi Corporation]
|
| Part No. |
APTDF430U100G
|
| OCR Text |
...c vehicles
VCES = 1000V IC = 430A @ Tc = 80C
Features * * * * * * Benefits * * * * * Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Ultra fast recov... |
| Description |
Single diode Power Module
|
| File Size |
183.03K /
3 Page |
View
it Online |
Download Datasheet |
| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRF7862PBF
|
| OCR Text |
...5C, IF = 16A, VDD = 15V di/dt = 430A/s
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
IRF7862PbF
1000 60s PULSE WIDTH Tj = 25C 1000
TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V
... |
| Description |
HEXFET Power MOSFET
|
| File Size |
605.71K /
9 Page |
View
it Online |
Download Datasheet |
| |
|
|
INFINEON[Infineon Technologies AG]
|
| Part No. |
SIGC15T60 Q67050-A4335-A101
|
| OCR Text |
... , IC= 2mA VGE=15V, IC =30A IC =430A , VGE=VCE VCE=600V , VGE=0V VCE=0V , VGE=20V none 600 1.1 5.0 1.5 5.8 1.9 6.5 1.6 300 A nA V Value typ. max. Unit
ELECTRICAL CHARACTERISTICS (verified by design/characterization): Parameter Input cap... |
| Description |
IGBT3 Chip
|
| File Size |
72.99K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
International Rectifier
|
| Part No. |
IRFP23N50LPBF
|
| OCR Text |
...e Figure 12). ISD 23A, di/dt 430A/s, VDD V(BR)DSS, TJ 150C.
Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS . Coss eff.(ER) is a... |
| Description |
23 A, 500 V, 0.235 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190ヘ , Trr typ. = 170ns , ID = 23A )
HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190Ω , Trr typ. = 170ns , ID = 23A )
|
| File Size |
195.87K /
9 Page |
View
it Online |
Download Datasheet |
|
For
43.0a Found Datasheets File :: 41 Search Time::1.875ms
Page :: | 1 | <2> | 3 | 4 | 5 | |
▲Up To
Search▲ |
|
Price and Availability
|
