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NTE[NTE Electronics]
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| Part No. |
NTE368
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| OCR Text |
512mhz
Description: The NTE368 is a silicon NPN transistor designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512mhz. Features: D Specified 12.5 Volt, 470MHz Characteristic... |
| Description |
Silicon NPN Transistor RF Power Output PO = 60W @ 512mhz
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| File Size |
20.79K /
2 Page |
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it Online |
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http://
POLYFET[Polyfet RF Devices]
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| Part No. |
MADQ02
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| OCR Text |
... MilliWatts VAGC=8V
MADQ02 F=512mhz Vds=28Vdc 20 18 16 14 12 10 8 6 4 2 0 0 5 31.0 Gain 30.5 30.0 Pout 29.5 29.0 Efficiency@15W=19% 28.5 10 15 20 Pin in MilliWatts 25 VAGC=8V
32 28 24 20 16 12 8 4 0
MADQ02 F=30MHz Vds=28Vdc Gain
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| Description |
Power RF Amplifiers
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| File Size |
73.43K /
2 Page |
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it Online |
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POLYFET[Polyfet RF Devices]
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| Part No. |
MDDQ02
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| OCR Text |
... MilliWatts VAGC=8V
MDDQ02 F=512mhz Vds=28Vdc 20 18 16 14 12 10 8 6 4 2 0 0 5 31.0 Gain 30.5 30.0 Pout 29.5 29.0 Efficiency@15W=19% 28.5 10 15 20 Pin in MilliWatts 25 VAGC=8V
32 28 24 20 16 12 8 4 0
MDDQ02 F=30MHz Vds=28Vdc Gain
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| Description |
Power RF Amplifiers
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| File Size |
75.10K /
2 Page |
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it Online |
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POLYFET[Polyfet RF Devices]
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| Part No. |
MGDQ01
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| OCR Text |
... MilliWatts VAGC=8V
MGDQ01 F=512mhz Vds=28Vdc 20 18 16 14 12 10 8 6 4 2 0 0 5 31.0 Gain 30.5 30.0 Pout 29.5 29.0 Efficiency@15W=19% 28.5 10 15 20 Pin in MilliWatts 25 VAGC=8V
32 28 24 20 16 12 8 4 0
MGDQ01 F=30MHz Vds=28Vdc Gain
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| Description |
Power RF Amplifiers
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| File Size |
74.61K /
2 Page |
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it Online |
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RFMD[RF Micro Devices]
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| Part No. |
RF2175_06 RF2175 RF2175PCBA RF217506
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| OCR Text |
...r applications in the 380MHz to 512mhz band. The RF2175 has an analog bias control voltage to maximize efficiency. The device is self-contained with 50 input, and the output can be easily matched to obtain optimum power, efficiency, and lin... |
| Description |
3V 400MHz LINEAR AMPLIFIER
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| File Size |
125.32K /
6 Page |
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it Online |
Download Datasheet |
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NTE[NTE Electronics]
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| Part No. |
NTE361
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| OCR Text |
512mhz
Description: The NTE361 is a silicon NPN transistor designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512mhz. Features: D Specified 12.5 Volt, 470MHz Characteristic... |
| Description |
Silicon NPN Transistor RF Power Output PO = 2W @ 512mhz
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| File Size |
18.86K /
2 Page |
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it Online |
Download Datasheet |
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NTE[NTE Electronics]
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| Part No. |
NTE365
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| OCR Text |
512mhz
Description: The NTE365 is a silicon NPN transistor designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512mhz. Features: D Specified 12.5 Volt, 470MHz Characteristic... |
| Description |
Silicon NPN Transistor RF Power Output PO = 15W @ 512mhz
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| File Size |
19.56K /
2 Page |
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it Online |
Download Datasheet |
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NTE[NTE Electronics]
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| Part No. |
NTE366
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| OCR Text |
512mhz
Description: The NTE366 is a silicon NPN transistor designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512mhz. Features: D Specified 12.5 Volt, 470MHz Characteristic... |
| Description |
Silicon NPN Transistor RF Power Output PO = 25W @ 512mhz
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| File Size |
21.28K /
2 Page |
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it Online |
Download Datasheet |
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NTE Electronics, Inc.
NTE[NTE Electronics]
|
| Part No. |
NTE367
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| OCR Text |
512mhz
Description: The NTE367 is a silicon NPN RF power transistor in a W65 type package designed for 12.5V UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512mhz. Features: D Specified 12.5V... |
| Description |
Silicon NPN Transistor RF Power Amplifier PO = 45W @ 512mhz
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| File Size |
21.33K /
2 Page |
View
it Online |
Download Datasheet |
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