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  60ns Datasheet PDF File

For 60ns Found Datasheets File :: 59+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 |   

    SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM416V4100B KM416V4000B KM416V4000BS-6
Description 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns

File Size 766.35K  /  35 Page

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    Linear
Part No. LT1671 1671I
Description 60ns, Low Power,Single Supply, Ground-Sensing Comparator
From old datasheet system

File Size 161.80K  /  4 Page

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    IR2011 IR2011SPBF IR2011S IR2011PBF

IRF[International Rectifier]
Part No. IR2011 IR2011SPBF IR2011S IR2011PBF
Description V(offset): 200V; 1A; V(out): 10-20V; 80 & 60ns (20ns - max); high and low side driver. For audio class D amplifiers, high power DC-DC SMPS converters, etc.

File Size 139.95K  /  17 Page

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    Sharp, Corp.
Part No. AD7530LQ AD7531LQ
Description 60ns, Low Power,Single Supply, Ground-Sensing Comparator; Package: SO; No of Pins: 8; Temperature Range: -40°C to 85°C
12-Bit Digital-to-Analog Converter 12位数字到模拟转换

File Size 398.93K  /  4 Page

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    Samsung Electronic
Part No. KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM416C1204CJ-50 KM416C1204CJ-60 KM416C1204CJL-45
Description 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh

File Size 803.02K  /  35 Page

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    Linear Technology, Corp.
Part No. 1671F LT1671IS8TRPBF
Description 60ns, Low Power,Single Supply, Ground-Sensing Comparator; Package: SO; No of Pins: 8; Temperature Range: -40&deg;C to 85&deg;C COMPARATOR, 4000 uV OFFSET-MAX, 85 ns RESPONSE TIME, PDSO8
From old datasheet system

File Size 158.42K  /  12 Page

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    K4F160411C-B K4F170411C K4F170411C-B K4F170411C-F K4F170412C-B K4F170412C K4F170412C-F K4F160411C K4F160411C-F K4F160412

Samsung Electronic
Samsung semiconductor
Part No. K4F160411C-B K4F170411C K4F170411C-B K4F170411C-F K4F170412C-B K4F170412C K4F170412C-F K4F160411C K4F160411C-F K4F160412C K4F160412C-B K4F160412C-F K4F160411C-B50 K4F160411C-B60 K4F160411C-F50 K4F160412C-B50 K4F160412C-B60 K4F160412C-F50 K4F160412C-F60 K4F170411C-B50 K4F170411C-B60
Description 4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns

File Size 223.73K  /  20 Page

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    HYB5116400BJ-50 HYB5116400BJ-50- HYB5116400BJ-60 HYB5116400BJ-70 HYB5116400BT-60 HYB5116400BT-70 HYB5116400BT-50 Q67100-

Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. HYB5116400BJ-50 HYB5116400BJ-50- HYB5116400BJ-60 HYB5116400BJ-70 HYB5116400BT-60 HYB5116400BT-70 HYB5116400BT-50 Q67100-Q1051 Q67100-Q1049 Q67100-Q1050
Description 4M x 4 Bit FPM DRAM 5 V 4k 60ns
4M x 4 Bit FPM DRAM 5 V 4k 50ns
-4M x 4-Bit Dynamic RAM

File Size 323.20K  /  26 Page

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    Samsung Electronic
Part No. KM44C1000D KM44V1000D KM44C1000DJL-7 KM44C1000DJL-6 KM44C1000DJL-5 KM44V1000DJL-6 KM44V1000DJL-7 KM44C1000DJ-5 KM44V1000DJ-7
Description 1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 70ns

File Size 371.80K  /  21 Page

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    GM71C18163CL-6 GM71C18163C GM71C18163CL-5 GM71C18163CL-7 GM71C18163CJ-6

HYNIX[Hynix Semiconductor]
Part No. GM71C18163CL-6 GM71C18163C GM71C18163CL-5 GM71C18163CL-7 GM71C18163CJ-6
Description 1,048,576 words x 16 bit CMOS DRAM, 60ns
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM

File Size 110.98K  /  11 Page

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