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  7.2a Datasheet PDF File

For 7.2a Found Datasheets File :: 34765    Search Time::2.797ms    
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    2SA2039 2SC5706 2SC5706TP-FA 2SA2039TP-FA

SANYO[Sanyo Semicon Device]
SANYO SEMICONDUCTOR CO LTD
Sanyo Electric Co.,Ltd.
Part No. 2SA2039 2SC5706 2SC5706TP-FA 2SA2039TP-FA
OCR Text ... 1.5 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 7.5 0.5 1 2 3 1 : Base 2 : Collector 3 : Emitter ...2A, IB=(-)100mA IC=(--)2A, IB=(-)100mA IC=(--)10A, IE=0 IC=(--)100A, RBE=0 IC=(--)1mA, RBE= IE=(-)10...
Description Low-Power, Single/Dual-Voltage &#181;P Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-251VAR
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-252VAR
Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
PNP/NPN Epitaxial Planar Silicon Transistors
NPN Epitaxial Planar Silicon Transistors High Current Switching Applications
PNP Epitaxial Planar Silicon Transistors High Current Switching Applications
5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR

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    2SA2040 2SC5707 C5707 2SA2040TP 2SA2040TP-FA 2SC5707TP-FA 2SC5707FA

SANYO[Sanyo Semicon Device]
Matsshita / Panasonic
Part No. 2SA2040 2SC5707 C5707 2SA2040TP 2SA2040TP-FA 2SC5707TP-FA 2SC5707FA
OCR Text ... 1.5 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 7.5 0.5 1 2 3 1 : Base 2 : Collector 3 : Emitter ...2A, IB=(-)40mA IC=(--)2A, IB=(--)40mA IC=(--)10A, IE=0 IC=(--)100A, RBE= IC=(--)1mA, RBE= IE=(-)10A,...
Description PNP Epitaxial Planar Silicon Transistors High Current Switching Applications
PNP / NPN Epitaxial Planar Silicon Transistors
PNP/NPN Epitaxial Planar Silicon Transistors
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 8A I(C) | TO-251VAR
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 8A I(C) | TO-252VAR
Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay

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    2SA2071

ROHM[Rohm]
Part No. 2SA2071
OCR Text ...Pw=100ms 2 Mounted on a 40x40x0.7 (mm) ceramic substrate 1.5 1.6 4.5 3.0 (2) 1/3 2SA2071 Transistor !Electrical characte...2A, IB= -0.2A 1 Collector-emitter saturation voltage VCE (sat) hFE VCE= -2V, IC= -100mA 120 - 390 - ...
Description Power transistor (-60V, -3A)
Power transistor (−60V −3A)
Power transistor (−60V, −3A)

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    2SA2087

ROHM[Rohm]
Part No. 2SA2087
OCR Text ...EMITTER CURRENT : IE (A) Fig.7 Base-Emitter Saturation Voltage vs. Collecter Current Fig.8 Grounded Emitter Propagation Characteristics Fig.9 Transition Frequency 100 Ta=25C f=1MHz COLLECTOR OUTPUT CAPACITANCE : Cob (pF) ...
Description Power transistor

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    2SA2093

ROHM[Rohm]
Part No. 2SA2093
OCR Text ...EMITTER CURRENT : IE (A) Fig.7 Base-Emitter Saturation Voltage vs. Collecter Current Fig.8 Grounded Emitter Propagation Characteristics Fig.9 Transition Frequency 1000 Ta=25C f=1MHz COLLECTOR OUTPUT CAPACITANCE : Cob (pF) ...
Description Power transistor ( 60V/2A)
Power transistor (−60V, −2A)
Power transistor (-60V, -2A)

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    2SA2113

ROHM[Rohm]
Part No. 2SA2113
OCR Text ... V V V A A 1 mW 2 C C 0 0.7 1/3 2SA2113 Transistor !Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit ...2A Turn-on time IB1= -200mA Tstg - 100 - ns IB2=200mA Storage time Tf - 20 - ns VCC -25V 2 Fall time...
Description Medium power transistor ( 30V/2A)
Medium power transistor (−30V, −2A)
Medium power transistor (-30V, -2A)

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    2SA985

WINGS[Wing Shing Computer Components]
Part No. 2SA985
OCR Text ...IC PC Tj Tstg Rating -120 -120 -7 -1.5 25 150 -50~150 Unit V V V A W ELECTRICAL CHARACTERISTICS (TA=25) Characteristic Collector Cut...2A , IB=-0.2A VCE=- 5V , IC=-0.5A Min Typ Max 100 100 150 -1.5 180 V MHZ Unit A A Wing Shing Com...
Description PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

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    2SB1050

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1050
OCR Text ...5 (Ta=25C) Ratings -30 -20 -7 -8 -5 1 150 -55 ~ +150 1cm2 Unit V V V A A W C C 1:Base 2:Collector 3:Emitter 2.5 2.5 3 2 1 Parameter...2A*2 IC = -3A, IB = -0.1A*2 VCB = -6V, IE = 50mA, f = 200MHz VCB = -20V, IE = 0, f = 1MHz *2 min...
Description Silicon PNP epitaxial planer type(For low-frequency amplification)

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    2SB1073

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1073
OCR Text ...* (Ta=25C) Ratings -30 -20 -7 -7 -4 1 150 -55 ~ +150 1cm2 Unit V V V A A W C C 1:Base 2:Collector 3:Emitter 3 2 1 Symbol VC...2A*2 IC = -3A, IB = -0.1A*2 VCB = -6V, IE = 50mA, f = 200MHz VCB = -20V, IE = 0, f = 1MHz min ...
Description Silicon PNP epitaxial planer type(For low-frequency amplification)

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    2SB1156 B1156

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1156 B1156
OCR Text ... (TC=25C) Ratings -130 -80 -7 -30 -20 100 3 150 -55 to +150 Unit V V V A A W C C 21.00.5 15.00.2 Low collector to emitter saturati...2A IC = -8A, IB = - 0.4A IC = -20A, IB = -2A VCE = -10V, IC = - 0.5A, f = 10MHz IC = -3A, IB1 = - 0....
Description Silicon PNP epitaxial planar type(For power switching)

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