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OPTEK[OPTEK Technologies]
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| Part No. |
OP906
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| OCR Text |
...h a peak emission wavelength of 935nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the photodiode being tested. (4) To calculate typical dark current in nA, use the formula ID = 10(0.042 TA-1.... |
| Description |
PIN Silicon Photodiode
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| File Size |
492.53K /
2 Page |
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OPTEK[OPTEK Technologies]
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| Part No. |
OP905
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| OCR Text |
...h a peak emission wavelength of 935nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the photodiode being tested. (4) To calculate typical dark current in nA, use the formula ID = 10(0.042 TA-1.... |
| Description |
PIN Sili con Pho todiode
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| File Size |
483.09K /
2 Page |
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it Online |
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OPTEK[OPTEK Technologies]
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| Part No. |
OP140D OP140A OP140B OP140C
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| OCR Text |
...n
The OP140 series devices are 935nm high intensity gallium arsenide infrared emitting diodes molded in IR transmissive plastic side-looking packages. The side looking packages are for use in PC board mounted slotted switches or as an easy... |
| Description |
GaAs Plastic Infrared Emitting Diodes
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| File Size |
234.53K /
2 Page |
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it Online |
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Optek Technology
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| Part No. |
4N22U 4N47U 4N23U 4N49U
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| OCR Text |
...0 nm (for the 4N2_U series) and 935nm (for the 4N4_ series) wavelength infrared emitting diode and a NPN silicon phototransistor, which are mounted in a hermetically sealed Surface Mount, 6 Pin package. Devices are designed for military and... |
| Description |
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| File Size |
198.19K /
5 Page |
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it Online |
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