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  cycl Datasheet PDF File

For cycl Found Datasheets File :: 954    Search Time::1.484ms    
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    SST38VF6401B-70-5I-CD SST38VF6401B-70-5I-TV SST38VF6402B-70-5I-TV SST38VF6402B-70-5I-CD SST38VF6404B SST38VF6404B-70-5I-

Microchip Technology
Part No. SST38VF6401B-70-5I-CD SST38VF6401B-70-5I-TV SST38VF6402B-70-5I-TV SST38VF6402B-70-5I-CD SST38VF6404B SST38VF6404B-70-5I-CD SST38VF6404B-70-5I-TV
OCR Text ... of the number of erase/program cycl es that have occurred. therefore, the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose erase and pro- gram times increase wi...
Description 64 Mbit (x16) Advanced Multi-Purpose Flash Plus

File Size 737.51K  /  58 Page

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    AON3611

Alpha & Omega Semiconductors
Part No. AON3611
OCR Text ...based on low frequency and duty cycl es to keep initialt j =25 c. d. the r qja is the sum of the thermal impedance from junction t o lead r qjl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300m...
Description 30V Complementary MOSFET

File Size 443.40K  /  9 Page

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    KM68257C-12 KM68257CJ-12 KM68257CJ-20 KM68257CL-12 KM68257CL-15 KM68257CL-20 KM68257CLJ-12 KM68257CLJ-15 KM68257CLP-20 K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
Part No. KM68257C-12 KM68257CJ-12 KM68257CJ-20 KM68257CL-12 KM68257CL-15 KM68257CL-20 KM68257CLJ-12 KM68257CLJ-15 KM68257CLP-20 KM68257CLTG-12 KM68257CLTG-15 KM68257CLTG-20 KM68257CP-15 KM68257CTG-15 KM68257CTG-20 KM68257C-15 KM68257C-20 KM68257CLP-15 KM68257CP-20 KM68257CTG-12 KM68257CJ-15 KM68257CLJ-20 KM68257CLP-12 KM68257CP-12 KM68257C SAMSUNGSEMICONDUCTORCO.LTD.-KM68257CL-12
OCR Text ...necessary during read and write cycl e. TIMING WAVE FORM OF WRITE cyclE(1) (OE=Clock) tWC ADD tAW OE tCW(3) CS tAS(4) WE tDW Data In High-Z tOHZ(6) High-Z(8) Data Out Data Valid tDH tWP(2) tWR(5) -6- Rev 3.0 February-1996 KM682...
Description 32Kx8 bit high speed static RAM (5V operating), 20ns
32Kx8 bit high speed static RAM (5V operating), 15ns
32Kx8 bit high speed static RAM (5V operating), 12ns
32Kx8 Bit High Speed Static RAM(5V Operating(, Evolutionary Pin out. Operated at Commercial Temperature Range. 32Kx8位高速静态RAM5V的工作(,进化引脚了。在商业温度范围工作

File Size 190.63K  /  10 Page

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    KM681002B-12 KM681002B-8 KM681002BI-12 KM681002BI-8 KM681002BJ-12 KM681002BJ-8 KM681002BJI-12 KM681002BJI-8 KM681002BT-1

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SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. KM681002B-12 KM681002B-8 KM681002BI-12 KM681002BI-8 KM681002BJ-12 KM681002BJ-8 KM681002BJI-12 KM681002BJI-8 KM681002BT-12 KM681002B KM681002B-10 KM681002BI-10 KM681002BJ-10 KM681002BJI-10 KM681002BT-10 KM681002BT-8 KM681002BTI-10 KM681002BTI-12 KM681002BTI-8
OCR Text ...necessary during read and write cycl e. Preliminary PRELIMINARY CMOS SRAM TIMING WAVEFORM OF WRITE cyclE(1) (OE= Clock) tWC Address tAW OE tCW(3) CS tAS(4) WE tDW Data in High-Z tOHZ(6) Data out High-Z(8) Valid Data tDH tWP(2) t...
Description 128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. 128Kx8位高速静态RAMV的工作),革命销出。在经营商业和工业温度范围

File Size 170.79K  /  8 Page

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    KM641003B KM641003B-12 KM641003B-10 KM641003B-8

SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM641003B KM641003B-12 KM641003B-10 KM641003B-8
OCR Text ...necessary during read and write cycl e. Preliminary PRELIMINARY CMOS SRAM TIMING WAVEFORM OF WRITE cyclE(1) (OE= Clock) tWC Address tAW OE tCW(3) CS tAS(4) WE tDW Data in High-Z tOHZ(6) Data out High-Z(8) Valid Data tDH tWP(2) t...
Description 256KX4 BIT (WITH OE) HIGH SPEED STATIC RAM(5.0V OPERATING), REVOLUTIONARY PIN OUT

File Size 126.39K  /  8 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KM684002 KM684002I-25 KM684002-17 KM684002-20 KM684002-25 KM684002E-17 KM684002E-20 KM684002E-25 KM684002I-17 KM684002I-20
OCR Text ...necessary during read and write cycl e. TIMING WAVE FORM OF WRITE cyclE(1) (OE=Clock) tWC ADD tAW OE tCW(3) CS tAS(4) WE tDW Data In High-Z tOHZ(6) High-Z(8) Data Out Data Valid tDH tWP(2) tWR(5) -6- Rev 3.0 June -1997 KM684002...
Description 512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range.

File Size 149.22K  /  9 Page

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    KM6161002B KM6161002B-10 KM6161002B-12 KM6161002B-8 KM6161002BI KM6161002BI-10 KM6161002BI-12 KM6161002BI-8

Samsung Electronic
Samsung semiconductor
Part No. KM6161002B KM6161002B-10 KM6161002B-12 KM6161002B-8 KM6161002BI KM6161002BI-10 KM6161002BI-12 KM6161002BI-8
OCR Text ...necessary during read and write cycl e. TIMING WAVEFORM OF WRITE cyclE(1) (OE Clock) tWC Address tAW OE tCW(3) CS tBW UB, LB tAS(4) WE tDW Data in High-Z tOHZ(6) Data out Valid Data tDH High-Z tWP(2) tWR(5) -6- Rev 2.0 Februa...
Description CMOS SRAM
64Kx16 Bit High Speed Static RAM(5.0V Operating), Revolutionary Pin out.

File Size 197.65K  /  9 Page

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    ST Microelectronics
Part No. STPS2060CT
OCR Text ...pulse test : * t p = 5 ms, duty cycl e<2% ** tp = 380 m s, duty cycl e<2% to evaluate the conduction losses use the following equation : p=0.54xi f(av) + 0.013 x i f 2 (rms) electrical static characteristics (per diode) symbol parameter val...
Description POWER SCHOTTKY RECTIFIER

File Size 22.55K  /  3 Page

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    PJ3842 PJ3842B PJ3842BCD PJ3842BCS

PROMAX-JOHNTON
ETC[ETC]
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
Part No. PJ3842 PJ3842B PJ3842BCD PJ3842BCS
OCR Text ...ation Latching PWM for cycle-By-cycl e Current Limiting Internally Lockout * * * High Current Totem Pole Output Input Undervoltage Lockout with Hystersis Low Start-Up and Operating Current Trimmed Reference with Undervoltage DIP-8 SOP...
Description 30mA; high performance current mode controller

File Size 373.86K  /  15 Page

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For cycl Found Datasheets File :: 954    Search Time::1.484ms    
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