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MDE Semiconductor
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| Part No. |
P4KE350
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| Description |
284.00V; 1mA ;400w peak pulse power; glass passivated junction transient voltage suppressor (tvs) diode. For bipolar applications
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| File Size |
841.97K /
4 Page |
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it Online |
Download Datasheet
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Motorola Mobility Holdings, Inc.
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| Part No. |
BDB02A
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| Description |
diode tvs 16V 400w uni 5% sma 晶体管|晶体管|进步党| 45V的五(巴西)总裁| 500mA的一(c)|26AE
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| File Size |
158.06K /
2 Page |
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it Online |
Download Datasheet
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Continental Device India Limited
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| Part No. |
CD9011 CD9011D CD9011E CD9011F CD9011G CD9011H CD9011I CD9011J
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| Description |
0.400w General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 29 - 273 hFE 0.400w General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 29 - 44 hFE 0.400w General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 40 - 59 hFE 0.400w General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 54 - 80 hFE 0.400w General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 72 - 108 hFE 0.400w General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 97 - 146 hFE 0.400w General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 132 - 198 hFE 0.400w General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 182 - 273 hFE
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| File Size |
85.83K /
3 Page |
View
it Online |
Download Datasheet
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Price and Availability
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