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  dson Datasheet PDF File

For dson Found Datasheets File :: 1656    Search Time::1.234ms    
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    PMN20EN

NXP Semiconductors
Part No. PMN20EN
OCR Text ...--6.7a static characteristics r dson drain-source on-state resistance v gs =10v; i d =6.7a; t j = 25 c - 16 20 m ? table 2. pinning information pin symbol description simplified outline graphic symbol 1 d drain sot457 (tsop6) 2 d drain 3 g...
Description 30 V, 6.7 A N-channel Trench MOSFET

File Size 806.20K  /  15 Page

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    BSH101 BSH101/T3

NXP Semiconductors
Part No. BSH101 BSH101/T3
OCR Text ...rent (dc) t s =8 0 c - 0.7 a r dson drain-source on-state resistance v gs = 1 0 v ; i d = 0.35 a - 0.81 w p tot total power dissipation t s =8 0 c - 0.5 w caution this product is supplied in anti-static packing to prevent damage caused by...
Description 700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-channel enhancement mode MOS transistor

File Size 640.21K  /  12 Page

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    SC462408

Semtech Corporation
Part No. SC462408
OCR Text ... v in 3 . 3 v in 5 v in r dson (m ? ) i out (a) internal pmos r dson @ room temperature internal nmos r dson @ room temperature 50 55 60 65 70 75 80 1 2 3 4 2 . 5 v in 3 . 3 v in 5 v in r dson (m ? ) i out (a) 5.0v/div 3.0...
Description Low Input Voltage, High Efficiency, 4A Integrated FET Synchronous Step down DC/DC Regulator

File Size 725.09K  /  20 Page

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    PMGD370XN

NXP Semiconductors
Part No. PMGD370XN
OCR Text ...i d 0.74 a n p tot 0.41 w n r dson 440 m w . table 1: pinning - sot363 (sc-88), simpli?ed outline and symbol pin description simpli?ed outline symbol 1 source (s1) sot363 (sc-88) 2 gate (g1) 3 drain (d2) 4 source (s2) 5 gate (g2) 6 drain...
Description Dual N-channel mTrenchMOS extremely low level FET

File Size 80.35K  /  12 Page

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    STA533WF11

STMicroelectronics
Part No. STA533WF11
OCR Text ...lse width distortion 200-m r dson complementary dmos output stage cmos-compatible logic inputs thermal protection thermal warning output undervoltage protection short-circuit protection description the sta533wf is a monolithic qua...
Description 18-volt, 3-amp, quad power half-bridge

File Size 236.90K  /  15 Page

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    GMM3X180-004X2

IXYS Corporation
Part No. GMM3X180-004X2
OCR Text ... = 40 v i d25 = 180 a r dson typ. = 1.9 mw three phase full bridge with trench mosfets in dcb isolated high current package applications ac drives ? in automobiles - electric power steering - starter generator ? in indu...
Description Three phase full Bridge with Trench MOSFETs in DCB isolated high current package

File Size 233.29K  /  7 Page

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    PMF250XN

NXP Semiconductors
Part No. PMF250XN
OCR Text ...--0.9a static characteristics r dson drain-source on-state resistance v gs =4.5v; i d = 0.9 a; t j = 25 c - 234 300 m ? table 2. pinning information pin symbol description simplified outline graphic symbol 1 g gate sot323 (sc-70) 2ssource ...
Description 30 V, 0.9 A N-channel Trench MOSFET

File Size 867.49K  /  15 Page

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    SGS Thomson Microelectronics
Part No. AN1299
OCR Text ...: capacitor charging current. r dson : dmos drain-source typical on resistance. t charge : capacitor charging time (it is the low side turn on time). v boot d v cc v f v gs_min = c boot q tot v boot d ------------------ = v drop i ch e ar...
Description L6384, L6385, L6386 & L6387 TRICKS AND TIPS

File Size 173.97K  /  23 Page

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    ST5R00 ST5R25M ST5R25U ST5R28M ST5R28U ST5R30M ST5R30U ST5R33M ST5R33U ST5R50M ST5R50U ST5RXX ST5R50MTR

STMicroelectronics
ST Microelectronics
Part No. ST5R00 ST5R25M ST5R25U ST5R28M ST5R28U ST5R30M ST5R30U ST5R33M ST5R33U ST5R50M ST5R50U ST5RXX ST5R50MTR
OCR Text ...up Voltage (VIN-VF) (1) R LX(dson) Internal Switch Rdson (1): The minimum input voltage for the IC start-up is strictly a function of the VF catch diode. ELECTRICAL CHARACTERISTICS FOR ST5R28 (VIN = 1.7V, IOUT = 10mA TA = 25oC unle...
Description MICROPOWER VFM STPE-UP DC/DC CONVERTER
(ST5R00 Series) MICROPOWER VFM STEP-UP DC/DC CONVERTER

File Size 711.18K  /  13 Page

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    MTP2317N3

Cystech Electonics Corp.
Part No. MTP2317N3
OCR Text ...bv dss -20v i d -5.8a r dson @v gs =-4.5v, i d =-4.5a 28m (typ.) r dson @v gs =-2.5v, i d =-2.5a 35m (typ.) 51m (typ.) r dson @v gs =-1.8v, i d =-2a features ? advanced trench process technology ? high density cell desi...
Description 20V P-CHANNEL Enhancement Mode MOSFET

File Size 271.68K  /  9 Page

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