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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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Part No. |
CM1200HC-66H
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Description |
HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
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File Size |
52.44K /
4 Page |
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it Online |
Download Datasheet
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Powerex, Inc.
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Part No. |
CM600HA-28H
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Description |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
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File Size |
48.90K /
4 Page |
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it Online |
Download Datasheet
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International Rectifier, Corp. IRF[International Rectifier]
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Part No. |
IRG4BC40K
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Description |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs)(短路额定超快速绝缘栅型双极型晶体管) INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A) 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
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File Size |
153.75K /
8 Page |
View
it Online |
Download Datasheet
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Price and Availability
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