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Renesas Electronics Corporation |
Part No. |
FP1L3N-T2B-A
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Description |
Built-in Resistor Bipolar Transistors, MM, /
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Tech specs |
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Official Product Page
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![](images/bg04.gif) |
Renesas Electronics Corporation |
Part No. |
FP1L3N-T1B-A
|
Description |
Built-in Resistor Bipolar Transistors, MM, /
|
Tech specs |
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|
Official Product Page
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NEC Corp. NEC[NEC]
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Part No. |
2SJ621 2SJ621-T2B 2SJ621-T1B
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Description |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA MOS FIELD EFFECT TRANSISTOR Pch enhancement type MOS FET
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File Size |
71.11K /
8 Page |
View
it Online |
Download Datasheet
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NEC, Corp. NEC[NEC]
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Part No. |
2SJ626 2SJ626-T1B 2SJ626-T2B
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Description |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V MOS场效应管 MOS FIELD EFFECT TRANSISTOR Pch enhancement type MOS FET
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File Size |
63.69K /
8 Page |
View
it Online |
Download Datasheet
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