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  g6h Datasheet PDF File

For g6h Found Datasheets File :: 36    Search Time::1.578ms    
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    UPG2418TB-A UPG2418TB-E4-A UPG2418TB-EVAL-A

Duracell
Renesas Electronics Corporation
Part No. UPG2418TB-A UPG2418TB-E4-A UPG2418TB-EVAL-A
OCR Text ...(sc-88/sot-363 type) (pb-free) g6h ? embossed tape 8 mm wide ? pin 4, 5, 6 face the perforation side of the tape ? qty 3 kpcs/reel remark to order evaluation samples, please contact your nearby sales office. part number fo...
Description GaAs Integrated Circuit 0.5 to 3.0 GHz SPDT Switch with 50 Ω Termination

File Size 218.83K  /  12 Page

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    RJH30H1DPP-M0

Renesas Electronics Corporation
Part No. RJH30H1DPP-M0
OCR Text ...gate and thin wafer technology (g6h-ii series) ? high speed switching: tr =80 ns typ., tf = 150 ns typ. ? low collector to emitter saturation voltage: v ce(sat) = 1.5 v typ. ? low leak current: i ces = 1 ? a max. ? built-in fa...
Description Silicon N Channel IGBT High speed power switching

File Size 147.22K  /  7 Page

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    Renesas
Part No. RJP30K3DPP-M0
OCR Text ...gate and thin wafer technology (g6h-ii series) ? low collector to emitter saturation voltage v ce(sat) = 1.1v typ ? high speed switching tr = 90 ns typ, tf = 250 ns typ ? low leak current i ces = 1 ? a max ? isolated packa...
Description N-Channel Power MOSFET

File Size 149.43K  /  7 Page

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    RJP30K3DPP-M0

Renesas Electronics Corporation
Part No. RJP30K3DPP-M0
OCR Text ...gate and thin wafer technology (g6h-ii series) ? low collector to emitter saturation voltage v ce(sat) = 1.1v typ ? high speed switching tr = 90 ns typ, tf = 250 ns typ ? low leak current i ces = 1 ? a max ? isolated packa...
Description Silicon N Channel IGBT High Speed Power Switching

File Size 88.71K  /  7 Page

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    RJP30H1DPP-M0

Renesas Electronics Corporation
Part No. RJP30H1DPP-M0
OCR Text ...gate and thin wafer technology (g6h-ii series) ? high speed switching: t r =80 ns typ., t f = 150 ns typ. ? low collector to emitter saturation voltage: v ce(sat) = 1.5 v typ. ? low leak current: i ces = 1 ? a max. ? isolat...
Description Silicon N Channel IGBT High speed power switching

File Size 146.19K  /  7 Page

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    12G6H 20G6H 8G6H 16G6H 32G6H 24G6H 28G6H

Edal Industries, Inc.
Part No. 12g6h 20g6h 8g6h 16g6h 32g6h 24g6h 28g6h
OCR Text g6h Silicon High Voltage Assembly PIV (KV) 8 12 16 20 24 28 32 A IN 10.125 13.625 17.125 20.625 24.125 27.625 31.125 PART NO. 8g6h 12g6h 16g6h 20g6h 24g6h 28g6h 32g6h Is AMPS 1800 (203) 467-2591 TEL (203) 469-5928 FAX Email: ...
Description Silicon High Voltage Assembly

File Size 316.35K  /  1 Page

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    Renesas
Part No. RJP30H1DPD
OCR Text ...gate and thin wafer technology (g6h-ii series) ? high speed switching: t r = 80 ns typ., t f = 150 ns typ. ? low collector to emitter saturation voltage: v ce(sat) = 1.5 v typ. ? low leak current: i ces = 1 ? a max. outlin...
Description N-Channel Power MOSFET

File Size 207.21K  /  7 Page

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    RJP30H1DPD

Renesas Electronics Corporation
Part No. RJP30H1DPD
OCR Text ...gate and thin wafer technology (g6h-ii series) ? high speed switching: t r = 80 ns typ., t f = 150 ns typ. ? low collector to emitter saturation voltage: v ce(sat) = 1.5 v typ. ? low leak current: i ces = 1 ? a max. outlin...
Description Silicon N Channel IGBT High speed power switching

File Size 146.46K  /  7 Page

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    Renesas
Part No. RJP30H1DPP-M0
OCR Text ...gate and thin wafer technology (g6h-ii series) ? high speed switching: t r =80 ns typ., t f = 150 ns typ. ? low collector to emitter saturation voltage: v ce(sat) = 1.5 v typ. ? low leak current: i ces = 1 ? a max. ? isolat...
Description N-Channel Power MOSFET

File Size 206.95K  /  7 Page

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    Renesas
Part No. RJP30H2DPK-M0
OCR Text ...gate and thin wafer technology (g6h-ii series) ? low collector to emitter saturation voltage: v ce(sat) = 1.4 v typ ? high speed switching: t f = 100 ns typ, t f = 180 ns typ ? low leak current: i ces = 1 ? a max outline 1...
Description N-Channel Power MOSFET

File Size 215.90K  /  7 Page

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For g6h Found Datasheets File :: 36    Search Time::1.578ms    
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