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Renesas
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Part No. |
RJP30K3DPP-M0
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OCR Text |
...gate and thin wafer technology (g6h-ii series) ? low collector to emitter saturation voltage v ce(sat) = 1.1v typ ? high speed switching tr = 90 ns typ, tf = 250 ns typ ? low leak current i ces = 1 ? a max ? isolated packa... |
Description |
N-Channel Power MOSFET
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File Size |
149.43K /
7 Page |
View
it Online |
Download Datasheet
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Renesas
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Part No. |
RJP30H1DPD
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OCR Text |
...gate and thin wafer technology (g6h-ii series) ? high speed switching: t r = 80 ns typ., t f = 150 ns typ. ? low collector to emitter saturation voltage: v ce(sat) = 1.5 v typ. ? low leak current: i ces = 1 ? a max. outlin... |
Description |
N-Channel Power MOSFET
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File Size |
207.21K /
7 Page |
View
it Online |
Download Datasheet
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Renesas
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Part No. |
RJP30H1DPP-M0
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OCR Text |
...gate and thin wafer technology (g6h-ii series) ? high speed switching: t r =80 ns typ., t f = 150 ns typ. ? low collector to emitter saturation voltage: v ce(sat) = 1.5 v typ. ? low leak current: i ces = 1 ? a max. ? isolat... |
Description |
N-Channel Power MOSFET
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File Size |
206.95K /
7 Page |
View
it Online |
Download Datasheet
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Renesas
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Part No. |
RJP30H2DPK-M0
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OCR Text |
...gate and thin wafer technology (g6h-ii series) ? low collector to emitter saturation voltage: v ce(sat) = 1.4 v typ ? high speed switching: t f = 100 ns typ, t f = 180 ns typ ? low leak current: i ces = 1 ? a max outline 1... |
Description |
N-Channel Power MOSFET
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File Size |
215.90K /
7 Page |
View
it Online |
Download Datasheet
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Price and Availability
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