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  gate-commutated Datasheet PDF File

For gate-commutated Found Datasheets File :: 737    Search Time::4.953ms    
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    MTP10N10E ON2538

MOTOROLA[Motorola, Inc]
Part No. MTP10N10E ON2538
OCR Text ...hannel Enhancement-Mode Silicon Gate (R) D G S CASE 221A-06, Style 5 TO-220AB MAXIMUM RATINGS (TC = 25C unless otherwise note...commutated source-drain current versus re-applied drain voltage when the source-drain diode has unde...
Description From old datasheet system
TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM

File Size 237.69K  /  8 Page

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    MTP10N40 MTP10N40E ON2540 MTP10N40E-D

ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MTP10N40 MTP10N40E ON2540 MTP10N40E-D
OCR Text ...hannel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and s...commutated source-drain current versus re-applied drain voltage when the source-drain diode has unde...
Description TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
From old datasheet system

File Size 249.12K  /  8 Page

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    MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D

ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D
OCR Text ...hannel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high energy in the avalanche and commutation modes. ...commutated source-drain current versus re-applied drain voltage when the source-drain diode has unde...
Description TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM
TMOS POWER FET 12 AMPERES 60 VOLTS
From old datasheet system

File Size 239.56K  /  6 Page

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    MTP5N40E ON2629

Fairchild Semiconductor
Motorola, Inc
Part No. MTP5N40E ON2629
OCR Text ...hannel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and s...commutated source-drain current versus re-applied drain voltage when the source-drain diode has unde...
Description From old datasheet system
TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM

File Size 258.42K  /  8 Page

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    TIC106 TIC106D TIC106M TIC106N TIC106S

Power Innovations International, Inc.
Power Innovations Limited
Power Innovations Ltd
Part No. TIC106 TIC106D TIC106M TIC106N TIC106S
OCR Text ...rent (see Note 4) Peak positive gate current (pulse width 300 s) Peak gate power dissipation (pulse width 300 s) Average gate power dissip...commutated turn-off time IT = 5 A IT = 5 A IRM = 8 A TEST CONDITIONS IG = 10 mA IG = 10 mA See Figur...
Description SILICON CONTROLLED RECTIFIERS

File Size 163.60K  /  8 Page

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    TIC108 TIC108D TIC108M TIC108N TIC108S

Power Innovations Ltd
Power Innovations Limited
Part No. TIC108 TIC108D TIC108M TIC108N TIC108S
OCR Text ...rent (see Note 4) Peak positive gate current (pulse width 300 s) Peak gate power dissipation (pulse width 300 s) Average gate power dissip...commutated turn-off time IT = 5 A IT = 5 A TEST CONDITIONS IG = 10 mA IRM = 8 A See Figure 1 See Fig...
Description SILICON CONTROLLED RECTIFIERS

File Size 160.97K  /  8 Page

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    ACT5101-1

Aeroflex Circuit Techno...
AEROFLEX[Aeroflex Circuit Technology]
Part No. ACT5101-1
OCR Text ...ABLE * ISOLATED UPPER AND LOWER GATE DRIVERS * FULL MILITARY (-55C TO +125C) TEMPERATURE RANGE CIRCUIT TECHNOLOGY www.aeroflex.com Gene...commutated in a 6 step trapezoidal mode. The only unacceptable combination would be to turn on an up...
Description ACT5101-1 HIGH VOLTAGE 3-PHASE BRUSHLESS DC MOTOR DRIVE

File Size 132.36K  /  12 Page

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    AT505 AT505S16

POSEICO[Power Semiconductors]
Part No. AT505 AT505S16
OCR Text ...rise of off-state voltage, min. Gate controlled delay time, typical Circuit commutated turn-off time, typical Reverse recovery charge Peak reverse recovery current Holding current, typical Latching current, typical From 75% VDRM up to 45...
Description    PHASE CONTROL THYRISTOR

File Size 166.52K  /  4 Page

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    AT603 AT603S16

POSEICO[Power Semiconductors]
Part No. AT603 AT603S16
OCR Text ...rise of off-state voltage, min. Gate controlled delay time, typical Circuit commutated turn-off time, typical Reverse recovery charge Peak reverse recovery current Holding current, typical Latching current, typical From 75% VDRM up to 86...
Description PHASE CONTROL THYRISTOR

File Size 35.59K  /  3 Page

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    AT604 AT604S16

POSEICO SPA
POSEICO[Power Semiconductors]
Part No. AT604 AT604S16
OCR Text ...rise of off-state voltage, min. Gate controlled delay time, typical Circuit commutated turn-off time, typical Reverse recovery charge Peak reverse recovery current Holding current, typical Latching current, typical From 75% VDRM up to 66...
Description PHASE CONTROL THYRISTOR 相位控制晶闸

File Size 42.20K  /  4 Page

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For gate-commutated Found Datasheets File :: 737    Search Time::4.953ms    
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