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For high-eff Found Datasheets File :: 2727    Search Time::3.047ms    
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    MTAN6311-AG MTAN6311-AHR MTAN6311-AHRG MTAN6311-G MTAN6411-CHRG AN631 MTAN6411-CG MTAN6411-CHR MTAN6411-G

MARKTECH[Marktech Corporate]
Marktech Optoelectronics
Part No. MTAN6311-AG MTAN6311-AHR MTAN6311-AHRG MTAN6311-G MTAN6411-CHRG AN631 MTAN6411-CG MTAN6411-CHR MTAN6411-G
OCR Text ...rey surface/white epoxy color * High efficiency red and green OPTO-ELECTRICAL CHARACTERISTICS (Ta OPTO-ELECTRICAL CHARACTERISTICS (Ta = 2...Eff Red Green Hi-Eff Red Green 30 30 30 30 5 5 5 5 85 85 85 85 2.1 2.1 2.1 2.1 3.0 3....
Description Marktech 1.20 5x7 Bi−Color Dot Matrix
1.2 5x7 Bi-Color Dot Matrix Display 1.2 5x7双色点阵式显示器
DC/DC CONVERTER, 30W 5V

File Size 76.75K  /  1 Page

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    NJM12904 NJM12904D NJM12904E NJM12904L NJM12904M NJM12904R NJM12904V PHA2731-190M

MA-Com
MACOM[Tyco Electronics]
Analog Devices, Inc.
Part No. NJM12904 NJM12904D NJM12904E NJM12904L NJM12904M NJM12904R NJM12904V PHA2731-190M
OCR Text ...pulsed power applications where high efficiency and saturated power are required. The module incorporates two in-phase combined common base ...Eff. Performance vs. PIN, 38 VCC=38V, 200 s, 10% 300 80 Pout 2.7GHz Pout 2.9GHz Pout 3.1GHz ...
Description Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz / 200s Pulse / 10 Duty
Radar Pulsed Power Amplifier-190 Watts 2.7-3.1GHz,200ms Pulse,10% Duty
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200s Pulse, 10 Duty
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200レs Pulse, 10 Duty 雷达脉冲功率Amplifier.190.7.3.1千兆赫,200レ拧脉冲10职务

File Size 52.66K  /  2 Page

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    AIC1630 AIC1630-3CN AIC1630-3CS AIC1630-5CN AIC1630-5CS AIC1630ACN AIC1630ACS AIC1630CN AIC1630CS

Analog Integrations, Corp.
AIC[Analog Intergrations Corporation]
Analog Integrations Corporation
Part No. AIC1630 AIC1630-3CN AIC1630-3CS AIC1630-5CN AIC1630-5CS AIC1630ACN AIC1630ACS AIC1630CN AIC1630CS
OCR Text ... Note : VIN 1.8V , VOUT 7V High Efficiency Step-Up DC/DC Converter Analog Integrations Corporation DS-1630-05 4F, 9, Industry E. ...Eff iciency (% ) 85 80 V IN= 4.5V V IN= 3V V IN= 3.3V V IN= 2.2V 75 70 5nF C2 D1 100F L...
Description 2-Cell, Step-Up DC/DC Converter Controller 2节电池,升压型DC / DC转换器控制器
2-Cell/ Step-Up DC/DC Converter Controller

File Size 369.59K  /  11 Page

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    IRF7380

International Rectifier
Part No. IRF7380
OCR Text High frequency DC-DC converters VDSS 80V RDS(on) max 73m@VGS = 10V ID 3.6A Benefits Low Gate to Drain Charge to Reduce Switching...eff. Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charg...
Description 80V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
High frequency DC-DC converters

File Size 503.95K  /  8 Page

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    FCP7N60 FCPF7N60

FAIRCHILD[Fairchild Semiconductor]
Part No. FCP7N60 FCPF7N60
OCR Text ... proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-res...eff. td(on) tr td(off) tf Qg Qgs Qgd TC = 25C unless otherwise noted Parameter Drain-Source B...
Description 600V N-Channel SuperFET
600V N-Channel MOSFET

File Size 799.38K  /  10 Page

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    IRF730APBF

IRF[International Rectifier]
Part No. IRF730APBF
OCR Text High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dyna...eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Mill...
Description SMPS MOSFET

File Size 180.64K  /  8 Page

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    IRF730A IRF730 IRF730APBF

IRF[International Rectifier]
Part No. IRF730A IRF730 IRF730APBF
OCR Text ... Uninterruptable Power Supply l High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, ...eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Mill...
Description 400V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
SMPS MOSFET

File Size 100.63K  /  8 Page

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    IRF7413 7413

International Rectifier
Part No. IRF7413 7413
OCR Text High frequency DC-DC converters IRF7413 HEXFET(R) Power MOSFET RDS(on) max(mW) 11@VGS = 10V VDSS 30V ID 12A Benefits l Low G...eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Mill...
Description Power MOSFET(Vdss=30V, Id=12A)
Power MOSFET(Vdss=30V/ Id=12A)

File Size 121.55K  /  8 Page

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    IRFP27N60K

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFP27N60K
OCR Text ... Uninterruptible Power Supply l High Speed Power Switching l Motor Drive Benefits l Low Gate Charge Qg results in Simple Drive Requirement l...eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Mill...
Description Power MOSFET(Vdss=600V, Rds(on)typ.=180mohm, Id=27A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rdson)典\u003d 180mohm,身份证\u003d 27A条)
Power MOSFET(Vdss=600V / Rds(on)typ.=180mohm / Id=27A)

File Size 89.84K  /  8 Page

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