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id-3.8a Datasheet PDF File

For id-3.8a Found Datasheets File :: 162 Search Time::4.125ms
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				STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	STP45NF06
OCR Text	... VDSS 60V RDS(on) <0.028 ID 38A TYPICAL RDS(on) = 0.022 EXCEPTIONAL dv/dt CAPABILITY DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resultin...
Description	N-CHANNEL 60V - 0.022ohm - 38A TO-220 STripFETPOWER MOSFET N沟道60V 0.022ohm - 38A条，220 STripFET⑩功率MOSFET N-CHANNEL 60V - 0.022ohm - 38A TO-220 STripFET⑩ POWER MOSFET N-CHANNEL 60V - 0.022ohm - 38A TO-220 STripFET POWER MOSFET N-CHANNEL 60V 0.022 OHM 38A TO-220 STRIPFET POWER MOSFET
File Size	113.53K / 6 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	ATP203
OCR Text	...che Current 2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings 30 20 75 225 50 150 --55 to +150 52...38A 2 L50H, Single pulse Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdo...
Description	N-Channel Silicon MOSFET General-Purpose Switching Device Applications
File Size	252.57K / 4 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	2SK4074LS
OCR Text	...che Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings 75 20 76 304 2.0 40 150 --55 to +15...38A ID=38A, VGS=10V ID=38A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Tes...
Description	N-Channel Silicon MOSFET General-Purpose Switching Device Applications
File Size	53.11K / 5 Page	View it Online	Download Datasheet

				AUK corp
Part No.	STK38X60LM
OCR Text	... (Ta=25C) Symbol VDSS VGSS ID IDP PD IAS EAS IAR EAR TJ Tstg Rating 600 30 0.38 1.6 1.3 0.4 1.7 0.4 50 150 -55~150 Unit V V...38A, RG=25 - - ns VDD=300V, VGS=10V ID=0.38A - nC - Source-Drain Dio...
Description	Advanced Power MOSFET
File Size	359.92K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFPS40N60KPBF
OCR Text	...ute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuo...38A 84 nC VDS = 480V 150 VGS = 10V, See Fig. 6 and 13 --- VDD = 300V --- ID = 38A ns --- R G = 4.3 ...
Description	HEXFET Power MOSFET
File Size	173.60K / 8 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STD38NH02L_06 D38NH02L STD38NH02L STD38NH02L-1 STD38NH02LT4 STD38NH02L06
OCR Text	...V RDS(on) <0.0135 <0.0135 ID 38A 38A 2 1 3 1 3 Logic level device RDS(ON) * Qg Industry's benchmark Conduction losses reduced Switching losses reduced Low threshold drive iPAK DPAK Description This device utilizes the latest...
Description	N-channel 24V - 0.011ohm - 38A - DPAK/IPAK STripFET TM III Power MOSFET
File Size	467.22K / 16 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHNA9160
OCR Text	...A9160 BVDSS -100V RDS(on) 0.087 ID -38A Features: s s s s s s s s s s s s s Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Ne...
Description	TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.087ohm, Id=-38A)
File Size	123.17K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFPS40N60K
OCR Text	...600V RDS(on) typ. 0.110 ID 40A SUPER TO-247AC Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Cont...38A 84 nC VDS = 480V 150 VGS = 10V, See Fig. 6 and 13 --- VDD = 300V --- ID = 38A ns --- RG = 4.3 -...
Description	40 A, 600 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC HEXFETPower MOSFET HEXFET-R Power MOSFET
File Size	137.34K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	FSJ163R4 FSJ163D FSJ163D1 FSJ163D3 FSJ163R FSJ163R1 FSJ163R3 FSJ260R3 FSJ260R4 FSJ160R3 FSJ160R4
OCR Text	.... . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...38A, VGS = 12V Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate ...
Description	Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs 70A/ 100V/ 0.022 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
File Size	56.45K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	FA38SA50LC
OCR Text	...S = 500V RDS(on) = 0.13 G ID = 38A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effecti...
Description	500V Single N-Channel HEXFET Power MOSFET in a SOT-227 (Iso) package
File Size	167.34K / 8 Page	View it Online	Download Datasheet

For id-3.8a Found Datasheets File :: 162 Search Time::4.125ms
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