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				IRF[International Rectifier]
Part No.	IRHY7230CM IRHY3230CM IRHY8230CM IRHY4230CM JANSF2N7381 JANSG2N7381 JANSH2N7381 JANSR2N7381
OCR Text	... ID =9.4A VGS =12V, RG = 7.5 igss igss Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time ...
Description	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 200V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package 200V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package 200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package
File Size	102.98K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHNB7Z60 IRHNB8Z60
OCR Text	...D = 15V, ID = 75A, RG = 2.35 igss igss Qg Q gs Q gd td(on) tr td(off) tf LD LS Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Ri...
Description	30Volt,0.009Ω,MEGA RAD HARD HEXFET(30V,0.009Ω,MEGA 抗辐射N沟道HEXFET晶体
File Size	110.79K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHNA7Z60 IRHNA8Z60
OCR Text	... = 15V, ID = 75A, RG = 2.35W igss igss Qg Qgs Qgd td(on) tr td(off) tf LD LS Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise...
Description	30Volt, 0.009Ω, RAD HARD HEXFET(30V, 0.009Ω,抗辐射N沟道HEXFET晶体
File Size	127.16K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHM7460SE
OCR Text	...= 250V, ID =18.8A, RG = 2.35 igss igss Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Ti...
Description	TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=18.8A)
File Size	99.74K / 4 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	MP6404
OCR Text	...yp.) (Pch) Low leakage current: igss = 10 A (max) (VGS = 16 V) IDSS = 100 A (max) (VDS = 60 V) Enhancement-mode: Vth = 0.8 V to 2.0 V (VDS = 10 V, ID = 1 mA) Industrial Applications Unit: mm Maximum Ratings (Ta = 25C) Characteristics Dr...
Description	TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type
File Size	273.12K / 11 Page	View it Online	Download Datasheet

				Sanyo Semicon Device Sanyo Electric Co.,Ltd.
Part No.	FW307
OCR Text	...kage Current V(BR)DSS IDSS IDSS igss igss ID=1mA, VGS=0 VDS=250V, VGS=0 VDS=15V, VGS=0, Ta=0 to 60C VGS=25V, VDS=0 VGS=15V, VDS=0, Ta=0 to 60C 250 100 4 10 1.2 V A A A A Symbol Conditions Ratings min typ max Unit Continued on next page. ...
Description	N-Channel and P-Channel Silicon MOSFETs Ultrahigh-Speed Switching Applications
File Size	45.91K / 5 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHM57064
OCR Text	...ID = 35A VGS =12V, RG = 2.35 igss igss Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time ...
Description	RADIATION HARDENED POWER MOSFET
File Size	122.21K / 8 Page	View it Online	Download Datasheet

				ETC
Part No.	OM6005 OM6005SC OM6006SC OM6007SC
OCR Text	...STICS: Parameter BVDSS VGS(th) igss igss IDSS Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage (OM6105) Gate-Body Leakage (OM6005) Zero Gate Voltage Drain Current ID(on) VDS(on) RDS(on) RDS(on) On-State Drain Current...
Description	POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-258AA PACKAGE
File Size	37.54K / 4 Page	View it Online	Download Datasheet

				Vishay
Part No.	SD211DE SST215 SST213 SD215DE SD213DE 70295
OCR Text	...f) 100 pA ISBO 5V 10 pA 60 10 V igss (Diode) 0 0 4 8 12 16 20 VSB - Body-Source Voltage (V) 1 pA 0 4 8 12 16 20 Applied Voltage (V) ID(off) 10 nA Leakage Current vs. Applied Voltage ID (off) @ VGS = VBG = -5 V IS(off) @ VGD = VBD = -5V ...
Description	N-Channel Lateral DMOS FETs From old datasheet system
File Size	76.03K / 6 Page	View it Online	Download Datasheet

For igss Found Datasheets File :: 23993 Search Time::1.594ms
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