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SGS Thomson Microelectronics
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| Part No. |
S2516NH
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| OCR Text |
...1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 igt tj( c) o ih -40 -20 0 20 40 60 80 100 120 140 igt[tj] igt[tj=25 c] o ih[tj] ih[tj=25 c] o fig.5 : relative variation of gate trigger current and holding current versus junction temperature. 0 20 40 60 80 ... |
| Description |
800V general purpose SCR
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| File Size |
60.90K /
5 Page |
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Unisonic Technologies Co., Ltd.
UTC[Unisonic Technologies]
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| Part No. |
US112S US112N
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| OCR Text |
...e of on-state current (IG = 2 x igt , tr 100 n s, F = 60 Hz , Tj = 125C,) Peak gate current (tp=20s, Tj = 125C) Maximum peak reverse gate voltage Average gate power dissipation (Tj = 125C) Storage junction temperature range Operating junct... |
| Description |
Suitable to fit all modes of control Found in applications such as Overvoltage crowbar protection 以适合，如铁撬过电压保护应用发现所有的控制模式
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| File Size |
187.19K /
4 Page |
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意法半导
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
T630W T620W
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| OCR Text |
...ECTRICAL CHARACTERISTICS Symbol igt VGT VGD tgt IH * VTM * IDRM IRRM dV/dt * (dV/dt)c * Test Conditions VD=12V (DC) RL=33 VD=12V (DC) RL=33 VD=VDRM RL=3.3k VD=VDRM IG = 500mA dlG/dt= 3As IT= 100mA Gate open Tj= 25C Tj= 25C Tj= 125C Tj= 25C ... |
| Description |
Snubberless Triac(双向可控
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| File Size |
61.47K /
5 Page |
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ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
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| Part No. |
ACS302-5T3 ACS302-5T3-TR
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| OCR Text |
... 0.4 A GATE TRIGGERING CURRENT: igt < 5 mA
SO-20 Wired package
PIN-OUT
11.2cm = 2.54'' OUTPUT 1 1 2 8.5cm 3 4 OUTPUT 2 5 6 7 8 OUTPUT 3 9 10 18 17 16 15 14 13 12 11 GATE 3 2.54cm = 1'' COM Pins 2, 3, 4, 6, 7, 8, 10, and 19, 17, 15,... |
| Description |
THREE LINES AC SWITCH ARRAY
THREE LINES AC SWITCH ARRAY
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| File Size |
119.66K /
7 Page |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
T620-600W
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| OCR Text |
...ECTRICAL CHARACTERISTICS Symbol igt VGT VGD tgt IH * VTM * IDRM IRRM dV/dt * (dV/dt)c * Test Conditions VD=12V (DC) RL=33 VD=12V (DC) RL=33 VD=VDRM RL=3.3k VD=VDRM IG = 500mA dlG/dt= 3As IT= 100mA Gate open Tj= 25C Tj= 25C Tj= 125C Tj= 25C ... |
| Description |
SNUBBERLESS TRIAC
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| File Size |
111.63K /
6 Page |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
USF10J48 SF10G48 SF10J48 USF10G48
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| OCR Text |
...RM = 400,600V : IT (AV) = 10A : igt = 10mA MAX. Unit: mm
USF10G48*USF10J48
JEDEC JEITA TOSHIBA
13-10J1B
JEDEC JEITA TOSHIBA
13-10J2B Weight: 1.7g
MARKING
*1 MARK F10G48 F10J48 TYPE NAME SF10G48, USF10G48 ASF10J48, USF10... |
| Description |
THYRISTOR SILICON PLANAR TYPE MEDIUM POWER CONTROL APPLICATIONS
TOSHIBA THYRISTOR SILICON PLANAR TYPE
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| File Size |
227.99K /
6 Page |
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ONSEMI[ON Semiconductor]
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| Part No. |
T2800D_06 T2800D T2800DG T2800D06
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| OCR Text |
...me (VD = Rated VDRM, IT = 10 A, igt = 80 mA, Rise Time = 0.1 ms) DYNAMIC CHARACTERISTICS Critical Rate-of-Rise of Commutation Voltage (VD = Rated VDRM, IT(RMS) = 8 A, Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80C) Critical Rate-o... |
| Description |
Silicon Bidirectional Thyristors
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| File Size |
49.88K /
4 Page |
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ONSEMI[ON Semiconductor]
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| Part No. |
T2500DG T2500D
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| OCR Text |
...n Time (Rated VDRM, IT = 10 A , igt = 160 mA, Rise Time = 0.1 ms) DYNAMIC CHARACTERISTICS Critical Rate-of-Rise of Commutation Voltage (Rated VDRM, IT(RMS) = 6 A, Commutating di/dt = 3.2 A/ms, Gate Unenergized, TC = 80C) Critical Rate-of-Ri... |
| Description |
Silicon Bidirectional Thyristors
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| File Size |
47.98K /
4 Page |
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it Online |
Download Datasheet |
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