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				NXP Semiconductors N.V.
Part No.	PSMN017-60YS
OCR Text	... A; VGS = 0 V; Tj = 25 C ID = 1 ma; VDS = VGS; Tj = 25 C; see Figure 10 and 11 ID = 1 ma; VDS = VGS; Tj = -55 C; see Figure 11 ID = 1 ma; VDS = VGS; Tj = 175 C; see Figure 11 IDSS IGSS RDSon drain leakage current gate leakage current drain-...
Description	N-channel LFPAK 60 V 15.7 m standard level MOSFET N-channel LFPAK 60 V 15.7 mΩ standard level MOSFET N-channel LFPAK 60 V 15.7 m楼? standard level MOSFET
File Size	232.04K / 15 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PSMN016-100YS
OCR Text	...ld voltage Conditions ID = 0.25 ma; VGS = 0 V; Tj = -55 C ID = 0.25 ma; VGS = 0 V; Tj = 25 C ID = 1 ma; VDS = VGS; Tj = 175 C; see Figure 10 ID = 1 ma; VDS = VGS; Tj = 25 C; see Figure 11 and 10 ID = 1 ma; VDS = VGS; Tj = -55 C; see Figure ...
Description	N-channel 100 V 16 mΩ standard level MOSFET in LFPAK N-channel 100 V 16 m楼? standard level MOSFET in LFPAK
File Size	228.88K / 14 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	PBTR2045CT PBTR2045CTB PBYR2045CT PBYR2045CTB PBYR2040CTB PBYR2040CT PBTR2040CT PBTR2040CTB PBYR2035CTB
OCR Text	...380 0.57 0.72 0.84 1.3 35 V V V ma ma pF October 1998 2 Rev 1.400 Philips Semiconductors Product specification Rectifier d...mb (K/W) 40 1 30 typ 20 max 10 T 0.1 P D tp D= tp T t 0 0.01 0 0.2 0.4 ...
Description	DB25 EXT CABLE 6 FT MF 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB DB25 EXT CABLE 6 FT MM Rectifier diodes Schottky barrier
File Size	41.84K / 6 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PSMN016-100YS10
OCR Text	...ld voltage Conditions ID = 0.25 ma; VGS = 0 V; Tj = -55 C ID = 0.25 ma; VGS = 0 V; Tj = 25 C ID = 1 ma; VDS = VGS; Tj = 175 C; see Figure 10 ID = 1 ma; VDS = VGS; Tj = 25 C; see Figure 11 and 10 ID = 1 ma; VDS = VGS; Tj = -55 C; see Figure ...
Description	N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK N-channel 100 V 16.3 m楼? standard level MOSFET in LFPAK
File Size	230.19K / 15 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	TS3V912 TS3V912AI TS3V912BI TS3V912I -TS3V912IN
OCR Text	... +125 -65 to +150 Unit V V V ma ma o C C o 1. All voltage values, except differential voltage are with respect to network groun...mb = 25 C Vid = 100mV VCC = +16V VCC = +10V 8 4 0 VCC = +3 V 1 0 -70 -56 -42 -28 -14 ...
Description	3V RAIL TO RAIL CMOS DUAL OPERATIONAL AMPLIFIER IC-DUAL RAIL/RAIL AM
File Size	116.60K / 11 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PSMN016-100PS
OCR Text	...ld voltage Conditions ID = 0.25 ma; VGS = 0 V; Tj = -55 C ID = 0.25 ma; VGS = 0 V; Tj = 25 C ID = 1 ma; VDS = VGS; Tj = 175 C; see Figure 10 ID = 1 ma; VDS = VGS; Tj = 25 C; see Figure 11 and 10 ID = 1 ma; VDS = VGS; Tj = -55 C; see Figure ...
Description	N-channel 100V 16 mΩ standard level MOSFET in TO220 N-channel 100V 16 m楼? standard level MOSFET in TO220
File Size	226.23K / 15 Page	View it Online	Download Datasheet

				SONY[Sony Corporation]
Part No.	CXA1684M
OCR Text	...erature Tstg -65 to +150 V V ma ma ma C Recommended Operating Conditions * DC power supply voltage VCC-VEE 4.75 to 5.46 V * Operating ambient temperature Ta 0 to +85 C Structure Bipolar silicon monolithic IC Sony reserves the right...
Description	High-Speed Transimpedance Amplifier
File Size	93.82K / 6 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PSMN015-60PS
OCR Text	... A; VGS = 0 V; Tj = 25 C ID = 1 ma; VDS = VGS; Tj = 25 C; see Figure 10 and 11 ID = 1 ma; VDS = VGS; Tj = -55 C; see Figure 11 ID = 1 ma; VDS = VGS; Tj = 175 C; see Figure 11 IDSS IGSS RDSon drain leakage current gate leakage current drain-...
Description	N-channel 60 V 14.8 mΩ standard level MOSFET N-channel 60 V 14.8 m楼? standard level MOSFET
File Size	223.24K / 14 Page	View it Online	Download Datasheet

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