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				SAMSUNG[Samsung semiconductor]
Part No.	K4H510438C-LA2 K4H510438C-LB0 K4H510438C-LB3 K4H510438C-LCC K4H510438C-UC K4H510838C-UC
OCR Text	...05 (0.80) 0. 15 ) 0.05 MIN (0.71) 0.65TYP 0.650.08 0.300.08 (10x) 0.10 MAX [ 0.075 MAX ] NOTE 1. ( ) IS REFERENCE 2. [ ] IS ASS'Y OUT QUALITY (R 66pin TSOPII / Package dimension Rev. 1.0 January. 2005 (R ...
Description	512Mb C-die DDR SDRAM Specification
File Size	209.84K / 23 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K4H510438
OCR Text	... 1.000.10 0. 15 ) 0.05 MIN (0.71) 0.65TYP 0.650.08 0.300.08 (10x) 0.10 MAX [ 0.075 MAX ] NOTE 1. ( ) IS REFERENCE 2. [ ] IS ASS'Y OUT QUALITY (R 66pin TSOPII / Package dimension Rev. 1.2 October, 2004 (R ...
Description	512Mb B-die DDR SDRAM Specification
File Size	328.94K / 23 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208Q0A-DCB0 K9F1208Q0A-HCB0 K9F1208Q0A-HIB0 K9F1208U0A-DCB0 K9F1208U0A-DIB0 K9F1208U0A-FCB0 K9F1208U0A-FIB0 K9F1208U0A-HCB0 K9F1208U0A-HIB0 K9F1208U0A-VIB0 K9F1216U0A-YCB0 K9F1216U0A-DIB0 K9F1216U0A-HIB0 K9F1216U0A-PCB0 K9F1216Q0A-HIB0 K9F1216Q0A-DCB0 K9F1216Q0A-HCB0
OCR Text	...below about 1.1V. (Page 44) The min. Vcc value 1.8V devices is changed. K9F12XXQ0A : Vcc 1.65V~1.95V --> 1.70V~1.95V Pb-free Package is adde...128Mb memory space.) Aug, 10th 2002 Oct, 21th 2002 0.5 Nov, 21th 2002 0.6 Mar. 5th 20...
Description	64M x 8 bit NAND flash memory, 2.7 - 3.6V 512Mb/256Mb 1.8V NAND Flash Errata 64M x 8 bit NAND flash memory, 1.70 - 1.95V 32M x 16 bit NAND flash memory, 2.7 - 3.6V 32M x 16 bit NAND flash memory, 1.70 - 1.95V
File Size	805.26K / 45 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K9F1208U0A K9F1216U0A
OCR Text	...below about 1.1V. (Page 44) The min. Vcc value 1.8V devices is changed. K9F1208Q0A : Vcc 1.65V~1.95V --> 1.70V~1.95V Pb-free Package is adde...128Mb memory space.) 1. 2.65V device is added. 2. Note is added. (VIL can undershoot to -0.4V and VI...
Description	64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
File Size	957.56K / 45 Page	View it Online	Download Datasheet

				HYNIX[Hynix Semiconductor] Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
Part No.	HY57V28162 HY57V281620ELT HY57V281620ELT-5 HY57V281620ETP-5 HY57V281620ETP-6 HY57V281620ETP-H HY57V281620ELT-7 HY57V281620ELTP-7 HY57V281620ELTP-H HY57V281620ET HY57V281620ET-5 HY57V281620ET-7 HY57V281620ETP-7 HY57V281620ELT-6 HY57V281620ELT-H HY57V281620ELTP-5 HY57V281620ELTP-6 HY57V281620ET-6 HY57V281620ET-H
OCR Text	...oltage Symbol VDD, VDDQ VIH VIL Min. 3.0 2.0 -0.3 Typ 3.3 3.0 Max 3.6 VDDQ + 0.3 0.8 Unit V V V Note 1 1, 2 1, 3 - Note: 1. All voltages are referenced to VSS = 0V 2. VIH(max) is acceptable 5.6V AC pulse width with <=3ns of duration. ...
Description	SDRAM - 128Mb 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O 8M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
File Size	119.76K / 13 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM48L16031BT-GF0 KM48L16031BT-GFY KM48L16031BT-GFZ KM416L8031BT-GF0 KM416L8031BT-GFZ KM416L8031BT-GFY DDRSDRAM KM48L16031BT-G_FZ KM416L8031BT-G_F0 KM416L8031BT-G_FY KM44L32031BT-G_F0 KM44L32031BT-G_FY KM44L32031BT-G_FZ KM48L16031BT-G_F0 KM48L16031BT-G_FY KM44L32031BT-GFZ KM44L32031BT-GF0 KM44L32031BT-GFY KM416L8031BT-F0 KM44L32031BT-GZ KM48L16031BT-GZ
OCR Text	...K hign/low level width from 0.4(min)/0.6(max)tCK to 0.45(min)/0.55(max)tCK. -> Better input clock duty ratio from differential clock. Versio...128Mb DDR SDRAM Contents Revision History DDR SDRAM Ordering Information 1. Key Features 1.1 Feat...
Description	128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10ns. DDR SDRAM Specification Version 0.61 128Mb DDR SDRAM 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns.
File Size	748.00K / 49 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S1G0732BNBSP K4S1G0732B-TC75 K4S1G0732B
OCR Text	... 2.54 MAX 0.10 MAX 0.05 MIN 0.71 0.25~0.40 0.80 54Pin TSOP2 Stack Package Dimension FUNCTIONAL BLOCK DIAGRAM CLK,CAS,RAS /WE,DQM /CS1,CKE1 64Mx8 64Mx8 /CS0,CKE0 DQ0 ~ DQ7 A0~A12,BA0,BA1 Rev. 1.1 February 2004 ...
Description	SDRAM stacked 1Gb B-die
File Size	124.59K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9K1208U0C K9K1208Q0C K9K1216D0C K9K1216Q0C K9K1216U0C K9K1208D0C
OCR Text	...mA Erase : Icc3 20mA-->40mA The min. Vcc value 1.8V devices is changed. K9K12XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V Pb-free Package is adde...128Mb memory space.) 1. The guidence of LOCKPRE pin usage is changed. Don't leave it N.C. Not using ...
Description	64M x 8 Bit / 32M x 16 Bit NAND Flash Memory 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
File Size	806.29K / 39 Page	View it Online	Download Datasheet

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