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  n-channel power enhancement mo Datasheet PDF File

For n-channel power enhancement mo Found Datasheets File :: 150+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    STB55NE06L 5722

STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
Part No. STB55NE06L 5722
Description n-channel enhancement mode "SINGLE FEATURE SIZETM " power moSFET(N娌??澧?己妯″????moSFET)
N - CHANNEL enhancement moDE SINGLE FEATURE SIZE power moSFET
From old datasheet system
N - CHANNEL enhancement moDE SINGLE FEATURE SIZE power moSFET
n-channel enhancement mode "SINGLE FEATURE SIZETM " power moSFET(N沟道增强模式功率moSFET) N沟道增强模式“的单一的功能SIZETM”功率moSFET(不适用沟道增强模式功率moSFET的)

File Size 54.22K  /  5 Page

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    STB9NB50 5376

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. STB9NB50 5376
Description n-channel enhancement mode powerMESHTM moSFET(N沟道增强模式moSFET)
N - CHANNEL enhancement moDE power MESH moSFET
N - CHANNEL enhancement moDE power MESH] moSFET
From old datasheet system

File Size 92.33K  /  8 Page

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    IRF540_D ON0285 IRF540/D IRF540-D IRF540

motorola, Inc.
ON Semiconductor
Part No. IRF540_D ON0285 IRF540/D IRF540-D IRF540
Description 27 A, 100 V, 0.07 ohm, n-channel, Si, power, moSFET, TO-220AB
100V7A TmoS power Field Effect Transistor (n-channel enhancement mode Silicon Gate100V7A TmoS功率场效应管(N沟道增强型硅门))
From old datasheet system
TmoS power FET 27 AMPERES
TmoS E-FET power Field Effect Transistor n-channel enhancement-mode Silicon Gate

File Size 139.23K  /  6 Page

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    SPD07N20 SPD07N20G SPD07N2008 SPU07N20G SPD07N20GXT

Infineon Technologies AG
Part No. SPD07N20 SPD07N20G SPD07N2008 SPU07N20G SPD07N20GXT
Description SIPmoS? power Transistor Features N channel enhancement mode Avalanche rated
SIPmopower Transistor Features N channel enhancement mode Avalanche rated
7 A, 200 V, 0.4 ohm, n-channel, Si, power, moSFET, TO-252AA

File Size 651.51K  /  10 Page

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    APT5014BLL APT5014SLL

Advanced power Technology, Ltd.
Part No. APT5014BLL APT5014SLL
Description power moS 7TM is a new generation of low loss, high voltage, n-channel enhancement mode power moSFETS 电源moS 7TM是一个低损耗,高电压,N沟道增强模式的新一代功率moSFET
power moS 7TM is a new generation of low loss/ high voltage/ n-channel enhancement mode power moSFETS
power moS V is a new generation of high voltage n-channel enhancement mode power moSFETs.
power moS 7 500V 35A 0.140 Ohm

File Size 61.15K  /  2 Page

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    STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
Part No. STP80N03L-06 4881
Description n-channel enhancement mode "Ultra High Density" power moS Transistor(N沟道增强模式高密度功率MOS晶体管) N沟道增强模式“超高密度”功率moS晶体管(不适用沟道增强模式高密度功率马鞍山晶体管)
N - CHANNEL enhancement moDE ULTRA HIGH DENSITY power moS TRANSISTOR
N - CHANNEL enhancement moDE ULTRA HIGH DENSITY power moS TRANSISTOR
From old datasheet system
N - CHANNEL enhancement moDE "ULTRA HIGH DENSITY" power moS TRANSISTOR

File Size 76.52K  /  5 Page

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    STN2N10L 4585

STMicroelectronics N.V.
ST Microelectronics
Part No. STN2N10L 4585
Description n-channel enhancement mode power moS Transistor(N沟道增强模式功率MOS晶体 N沟道增强模式功率moS晶体管(不适用沟道增强模式功率马鞍山晶体管
From old datasheet system
N - CHANNEL enhancement moDE power moS TRANSISTOR
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN

File Size 85.53K  /  5 Page

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    NDP6020P NDB6020P

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
Part No. NDP6020P NDB6020P
Description P-Channel enhancement mode Field Effect Transistor24A,-20V0.05ΩP沟道增强型moS场效应管(漏电流-24A, 漏源电压-20V,导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, power, moSFET, TO-263AB
P-Channel Logic Level enhancement mode Field Effect Transistor

File Size 60.89K  /  6 Page

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    BSM101AR C67076-S1018-A2 BSM101

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
Part No. BSM101AR C67076-S1018-A2 BSM101
Description From old datasheet system
SImoPAC module (power module Single switch N channel enhancement mode) SImoPAC模块(单开关电源模块N通道增强模式
SImoPAC module (power module Single switch N channel enhancement mode) 200 A, 50 V, 0.003 ohm, n-channel, Si, power, moSFET

File Size 199.00K  /  7 Page

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    MICROSEMI power PRODUCTS GROUP
ADPOW[Advanced power Technology]
Part No. APT8030JVFR_05 APT8030JVFR APT8030JVFR05
Description 25 A, 800 V, 0.3 ohm, n-channel, Si, power, moSFET
power moS V is a new generation of high voltage n-channel enhancement mode power moSFETs.

File Size 65.15K  /  4 Page

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