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  power-mos Datasheet PDF File

For power-mos Found Datasheets File :: 31649    Search Time::3.516ms    
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    ADPOW[Advanced Power Technology]
Part No. APT20M20LLL APT20M20B2LL
OCR Text POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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    L6932D1.2 L6932D1.2TR L6932D2.5TR L6932D1.8T L6932D25TR L6932 L6932D1.8 L6932D1.8TR L6932D12 L6932D12TR L6932D18 L6932D1

STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. L6932D1.2 L6932D1.2TR L6932D2.5TR L6932D1.8T L6932D25TR L6932 L6932D1.8 L6932D1.8TR L6932D12 L6932D12TR L6932D18 L6932D18TR L6932D2.5 L6932D25
OCR Text ...table applications reducing the power dissipation. L6932 is available in 1.8V, 2.5V and adj version from 1.2V and ensure a voltage regulatio...mos in order to limit the power dissipation. The device is also provided of a thermal shut down that...
Description HIGH PERFORMANCE 2A ULDO LINEAR REGULATOR 高性能甲ULDO线性稳压器
HIGH PERFORMANCE 2A ULDO LINEAR REGULATOR

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    LC66356B LC662312A LC662316A LC66P2516 LC66516B LC66566A LC66508B LC662106A LC662108A LC66406A LC66408A LC66356A LC66251

Sanyo Electric Co., Ltd.
Eutech Microelectronics, Inc.
SANYO[Sanyo Semicon Device]
http://
Part No. LC66356B LC662312A LC662316A LC66P2516 LC66516B LC66566A LC66508B LC662106A LC662108A LC66406A LC66408A LC66356A LC662512A LC662516A LC665316A LC665312A LC662306A LC662308A LC66306A LC665306A LC66E2516 LC66358A LC66358B LC66P5316 LC662104A LC662304A LC662508A LC66304A LC66308A LC66354A LC66354B LC66354C LC66354S LC66356C LC66356S LC66358C LC66358S LC66404A LC66506B LC66512B LC665304A LC665308A LC66556A LC66556B LC66558A LC66558B LC66562A LC66562B LC66566B LC66E2108 LC66E2316 LC66E308 LC66E408 LC66E516 LC66E5316 LC66P2108 LC66P2316 LC66P308 LC66P408 LC66P516 LC662104A/662106A/662108A LC662104AMFP30 LC662108AMFP30 LC662106AMFP30 LC662106ADIP30 LC662104ADIP30 LC662108ADIP30 LC662104AS
OCR Text ... timer) * 8-bit I/O functions * Power saving functions using halt and hold modes. * Packages: DIP30SD, MFP30S * Evaluation ICs: LC665099 (ev...MOS type * Nch: Intermediate sink current type * Pull-up MOS or Nch OD output * Output level on r...
Description Four-Bit Single-Chip Microcontrollers with 4, 6, and 8 KB of On-Chip ROM 四位单片机与4,6微控制器 KB的片上ROM
Four-Bit Single-Chip Microcontrollers with 4/ 6/ 8/ 12/ and 16 KB of On-Chip ROM
4-Bit Microcontroller
Microcontroller 微控制器
Four-Bit Single-Chip Microcontrollers with 4/6/and 8
Four-Bit Single-Chip Microcontrollers with 8 12 and 16 KB of On-Chip ROM
Four-Bit Single-Chip Microcontrollers with 4 6 8 12 and 16 KB of On-Chip ROM
Four-Bit Single-Chip Microcontrollers with 4, 6, 8, 12, and 16 KB of On-Chip ROM
Four-Bit Single-Chip Microcontrollers with 4 6 and 8 KB of On-Chip ROM
Four-Bit Single-Chip Microcontroller with 16 KB of On-Chip EPROM
Four-Bit Single-Chip Microcontroller with 16 KB of On-Chip OTP PROM
12 and 16-kbyte on-chip ROM capacities CMOS 4-bit single-chip microcontrollers

File Size 103.04K  /  13 Page

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    ADPOW[Advanced Power Technology]
Part No. APT20M20LLL APT20M20B2LL APT20M20B2LL_04 APT20M20B2LL04
OCR Text POWER MOS 7 (R) 200V 100A 0.020 R MOSFET T-MAXTM Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by ...
Description POWER MOS 7 MOSFET

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    ADPOW[Advanced Power Technology]
Part No. APT20M22B2VFR
OCR Text POWER MOS V (R) FREDFET T-MAXTM Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Powe...
Description POWER MOS V 200V 100A 0.022 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    PHN110

NXP Semiconductors
Philips Semiconductors
Part No. PHN110
OCR Text ...S * Motor and actuator driver * Power management * Synchronized rectification. 1 handbook, halfpage PHN110 DESCRIPTION N-channel enhancement mode MOS transistor in an 8-pin plastic SOT96-1 (SO8) package. dddd 5 8 PINNING - SO...
Description N-channel enhancement mode MOS transistor

File Size 79.38K  /  12 Page

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    Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT20M22JVFR
OCR Text POWER MOS V (R) FREDFET Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R...
Description Aluminum Electrolytic Radial Leaded Low Profile Capacitor; Capacitance: 1000uF; Voltage: 35V; Case Size: 16x25 mm; Packaging: Bulk
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 97A 0.022 Ohm

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    Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT20M22JVR APT20M22
OCR Text POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achiev...
Description From old datasheet system
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 97A 0.022 Ohm

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    Sanken
Part No. STR-Y6453
OCR Text power ic for quasi-resonant type switching power supply with high efficiency, low noise and low standby power in full load range str - y6 ...mos fet power dissipation 1 ? 2 p d1 ( 4) 26 w by infinite radiator 1.3 w no radiator co...
Description AC/DC converter IC

File Size 342.29K  /  11 Page

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