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VISHAY SEMICONDUCTORS
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| Part No. |
GI752/4F-E3
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| OCR Text |
...racteristics peak for w ard s u rge c u rrent (a) nu m b er of cycles at 60 hz 1 10 100 50 100 600 n on-repetiti v e repetiti v e v rrm may b e applied b et w een each cycle of s u rge, the t j noted is t j prior to s u rge t j = 150 c... |
| Description |
6 A, 200 V, SILICON, RECTIFIER DIODE
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| File Size |
335.12K /
4 Page |
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VISHAY INTERTECHNOLOGY INC
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| Part No. |
110MT120KPBF 110MT140KPBF
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| OCR Text |
... v rrm a pplied following su rge. initi a l t j = 150 c 600 650 700 750 8 00 550 500 450 400 3 50 3 00 250 200 150 peal half s ine wave forward current (a) pul s e train duration ( s ) 0.1 1.0 0.01 m a xim u m non-repetitive su rge c... |
| Description |
3 PHASE, 110 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
3 PHASE, 110 A, 1400 V, SILICON, BRIDGE RECTIFIER DIODE
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| File Size |
161.12K /
8 Page |
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it Online |
Download Datasheet |
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