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tcc Datasheet PDF File

For tcc Found Datasheets File :: 1154 Search Time::1.656ms
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				OKI electronic components OKI[OKI electronic componets]
Part No.	MSM54V24632A MSM54V24632A-10GS-BK4 MSM54V24632A-12GS-BK4
OCR Text	...Current (Operating) CKE VIH tcc = min tRC = min No Burst CKE VIH tcc = min tRC = min tRRD = min No Burst CKE VIH tcc = min CKE VIL tcc = min -- 180 -- 160 -- 140 mA 1, 2 ICC1D Both Banks Active -- 240 -- 200 -- 180 mA 1, 2 ...
Description	131,072-word x 32-bit x 2-bank SGRAM without graphics functionc 131,072-Word x 32-Bit x 2-Bank SGRAM without Graphics Functions
File Size	396.06K / 29 Page	View it Online	Download Datasheet

				Zilog, Inc.
Part No.	Z16C0210VSC Z16C0110PSC
OCR Text	...ons tda(mr) twch-20ns twmrh tcc-20ns tdmr(a) twci-20ns tddw(dsw) twch-25ns tdmr(dr) 2tcc-60ns tda(as) twch-20ns tdas(dr) 2tcg60ns tdds(as) twci-20ns twas twch-5n.s tdas(a) * twci-7ons tdas(dsr) twcens tddsr(dr) tcct...
Description	CPU CENTRAL PROCESSING UNIT Eight User-Selectable Addressing Modes
File Size	1,323.17K / 14 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280832A K4S280832A-TC_L10 K4S280832A-TC_L80 K4S280832A-TC_L1H K4S280832A-TC_L1L K4S280832A-TC_L75 K4S280832A-TC/L10 K4S280832A-TC/L1H K4S280832A-TC/L1L K4S280832A-TC/L75 K4S280832A-TC/L80
OCR Text	...C(min) IO = 0 mA CKE VIL(max), tcc = 10ns CKE & CLK VIL(max), tcc = CKE VIH(min), CS VIH(min), tcc = 10ns Input signals are changed one time during 20ns CKE VIH(min), CLK VIL(max), tcc = Input signals are stable CKE VIL(max), tcc =...
Description	128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size	107.61K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S280832C-TC_L1L K4S280832C-TC/L1H K4S280832C-TC/L1L K4S280832C-TC/L75 K4S280832C-TL750
OCR Text	...C(min) IO = 0 mA CKE VIL(max), tcc = 10ns CKE & CLK VIL(max), tcc = CKE VIH(min), CS VIH(min), tcc = 10ns Input signals are changed one time during 20ns CKE VIH(min), CLK VIL(max), tcc = Input signals are stable CKE VIL(max), tcc =...
Description	16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size	111.80K / 11 Page	View it Online	Download Datasheet

				Samsung Electronic Samsung semiconductor
Part No.	K4S280832E-TC75 K4S280832E-TL75 K4S281632E-TC60 K4S281632E-TC75 K4S281632E-TL60 K4S281632E-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 K4S280432E-TC75 K4S280432E-TL75
OCR Text	...C(min) IO = 0 mA CKE VIL(max), tcc = 10ns CKE VIH(min), CS VIH(min), tcc = 10ns Input signals are changed one time during 20ns CKE VIH(min), CLK VIL(max), tcc = Input signals are stable CKE VIL(max), tcc = 10ns CKE VIH(min), CS VIH...
Description	128Mb F-die SDRAM Specification 128Mb E-die SDRAM Specification
File Size	142.11K / 14 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280832F-TC75 K4S280832F-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 TL431CDT K4S280432F-TCL75 K4S280832F-TCL75 K4S280432F-TC75 K4S281632F-TCL60 K4S281632F-TCL75 K4S280432F-TL75
OCR Text	...C(min) IO = 0 mA CKE VIL(max), tcc = 10ns CKE VIH(min), CS VIH(min), tcc = 10ns Input signals are changed one time during 20ns CKE VIH(min), CLK VIL(max), tcc = Input signals are stable CKE VIL(max), tcc = 10ns CKE VIH(min), CS VIH...
Description	128Mb F-die SDRAM Specification 128Mb的的F - SDRAM内存芯片规格
File Size	143.50K / 14 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280832M K4S280832M-TC_L80 K4S280832M-TC_L10 K4S280832M-TC_L1H K4S280832M-TC_L1L K4S280832M-TC/L1L K4S280832M-TC/L1H K4S280832M-TC/L80 K4S280832M-TC/L10
OCR Text	...(min) IOL = 0 mA CKE VIL(max), tcc = 15ns CKE & CLK VIL(max), tcc = CKE VIH(min),CS VIH(min),tcc=15ns Input signals are changed one time during 30ns CKE VIH(min), CLK VIL(max), tcc = Input signals are stable CKE VIL(max), tcc = 15n...
Description	128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米8位4银行同步DRAM LVTTL
File Size	124.69K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S281632B-N K4S281632B-NC_L1H K4S281632B-NC_L1L K4S281632B-NC/L1H K4S281632B-NC/L1L K4S281632B-NC1H K4S281632B-NC1L K4S281632B-NL1H
OCR Text	...C(min) IO = 0 mA CKE VIL(max), tcc = 10ns Test Condition Version -1H Operating current (One bank active) Precharge standby current in power-down mode ICC1 ICC2P 140 1 1 20 mA 7 5 5 30 20 mA mA -1L mA 1 Unit Note CMOS SDRAM ICC2PS CKE...
Description	128Mb SDRAM, 3.3V, LVTTL, 100MHz 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP 200万16 × 4银行同步DRAM在sTSOP
File Size	62.82K / 8 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S281632B K4S281632B-TC10 K4S281632B-TC1H K4S281632B-TC1L K4S281632B-TC75 K4S281632B-TC80 K4S281632B-TL10 K4S281632B-TL1H K4S281632B-TL1L K4S281632B-TL75 K4S281632B-TL80
OCR Text	...C(min) IO = 0 mA CKE VIL(max), tcc = 10ns CKE VIH(min), CS VIH(min), tcc = 10ns Input signals are changed one time during 20ns CKE VIH(min), CLK VIL(max), tcc = Input signals are stable CKE VIL(max), tcc = 10ns CKE VIH(min), CS VIH...
Description	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
File Size	107.58K / 10 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	VJ0505D1ROBLPAT VJ0505D1ROBLLAC VJ0505D1ROBLBAT VJ0505D1ROBLBAC VJ0505D1ROBLCAC VJ0505D1ROBLCAT VJ0505D1ROBLDAC VJ0505D1ROBLDAT VJ0505D1ROBLGAC VJ0505D1ROBLLAT VJ0505D1ROKLBAC VJ0505D1ROKLCAC VJ0505D1ROKLPAT VJ0505D1ROKLDAT VJ0505D1ROKLGAC VJ0505D1ROKLLAC VJ0505D1ROKLBAT VJ0505D1ROKLCAT VJ0505D1ROKLDAC VJ0505D1ROKLRAC VJ0505D1ROGXLAT VJ0505D1ROGXLAC VJ0505D1ROMXPAT VJ0505D1ROMXPAC VJ0505D1ROMXLAC VJ0505D1ROMXLAT VJ0505D1ROGXRAC VJ0505D1ROKXRAC VJ0505D1RODXRAC VJ0505D1ROMXRAC VJ0505D1ROBXRAC VJ0505D1ROFXRAC VJ0505D1ROJXRAC VJ0505D1ROKXCAC VJ0505D1ROKXCAT VJ0505D1ROJXDAC VJ0505D1ROBXLAC VJ0505D1ROCXLAC VJ0505D1RODXLAC VJ0505D1ROFXLAC VJ0505D1ROCXDAC VJ0505D1ROCXDAT VJ0505D1ROFLLAT VJ0505D1ROJLCAC VJ0505D1ROJLRAC VJ0505D1ROJLBAC VJ0505D1ROJLBAT VJ0505D1ROJLPAC VJ0505D1ROJLDAC VJ0505D1ROJLCAT VJ0505D1ROJLGAC VJ0505D1RODLBAT VJ0505D1ROCXCAC VJ0505D1ROKXDAT VJ0505D1ROCLBAC VJ0505D1ROCLBAT VJ0505D1ROFXGAC VJ0505D1ROFXPAC VJ0505D1ROFXDAT VJ0505D1ROFXBAT VJ0505D1ROFXBAC VJ0505D1ROFXDAC VJ0505D1ROFXLAT VJ0505D1ROFXCAC VJ0505D1ROCLLAT VJ0505D1ROCLLAC VJ0505D1ROMLCAT VJ0505D1ROMLPAT VJ0505D1ROMLPAC VJ0505D1ROMLBAC VJ0505D1ROMLBAT VJ0505D1ROMLDAT VJ0505D1ROMLGAC VJ0505D1ROMLCAC VJ0505D1ROMLLAC
OCR Text	...ure coefficient of capacitance (tcc): c0g (d): 0 ppm/c 30 ppm/c from - 55 c to + 125 c with zero (0) v dc applied dissipation factor (df): c0g (d): 0.05 % max. at 1.0 v rms and 1 mhz ? for values ? 1000 pf c0g (d): 0.05 % max. at 1.0 ...
Description	MULTILAYER CERAMIC CHIP CAPACITORS MULTILAYER CERAMIC CHIP CAPACITORS
File Size	2,153.23K / 2 Page	View it Online	Download Datasheet

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